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    GATE ELECTRODE DOPANT ACTIVATION METHOD FOR SEMICONDUCTOR MANUFACTURING
    5.
    发明申请
    GATE ELECTRODE DOPANT ACTIVATION METHOD FOR SEMICONDUCTOR MANUFACTURING 失效
    用于半导体制造的门极电极激活方法

    公开(公告)号：US20060286763A1

    公开(公告)日：2006-12-21

    申请号：US11428758

    申请日：2006-07-05

    Applicant: Yi Ma ,  Khaled Ahmed ,  Kevin Cunningham ,  Robert McIntosh ,  Abhilash Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Miner

    Inventor： Yi Ma ,  Khaled Ahmed ,  Kevin Cunningham ,  Robert McIntosh ,  Abhilash Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Miner

    IPC: H01L21/76

    CPC classification number: H01L21/268 ,  H01L21/28035 ,  H01L21/324

    Abstract: Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.

    Abstract translation: 本发明的实施方案通常提供了在衬底上形成掺杂的含硅材料的方法。 在一个实施例中，该方法提供在电介质层上沉积多晶层并且用掺杂剂注入多晶层以形成掺杂浓度在约1×10 19原子/ cm 2范围内的掺杂多晶层 其中掺杂的多晶层含有硅或可含锗，碳或硼。 在快速热退火期间，衬底可以被加热到约800℃或更高，例如约1000℃的温度。 随后，掺杂多晶层可以暴露于激光退火并加热至约1000℃或更高的温度，例如在约1050℃至约1400℃的温度下，持续约500毫秒或更短 ，例如约100毫秒或更少。

    Apparatus for substrate temperature measurement using a reflecting cavity and detector
    6.
    发明授权
    Apparatus for substrate temperature measurement using a reflecting cavity and detector 有权
    使用反射腔和检测器进行基板温度测量的装置

    公开(公告)号：US06183130B2

    公开(公告)日：2001-02-06

    申请号：US09130253

    申请日：1998-08-06

    Applicant: Bruce Adams ,  Aaron Hunter ,  Alex Rubinchik ,  Mark Yam ,  Paul A. O'Brien

    Inventor： Bruce Adams ,  Aaron Hunter ,  Alex Rubinchik ,  Mark Yam ,  Paul A. O'Brien

    IPC: G01J508

    CPC classification number: G01J5/04 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0809 ,  G01J5/0815 ,  G01J5/0818 ,  G01J5/0821 ,  G01J5/0846 ,  G01J5/0862 ,  G01J2005/0048

    Abstract: A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber is described. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The temperature sensor includes a probe having an input end positioned to receive radiation from the reflecting cavity, and a detector optically coupled to an output end of the probe. The radiation entering the probe includes reflected radiation and non-reflected radiation. The detector measures an intensity of a first portion of the radiation entering the probe to generate a first intensity signal and measures an intensity of a second portion of the radiation entering the probe to generate a second intensity signal. The detector is configured so that a ratio of the reflected radiation to the non-reflected radiation is higher in the first portion than the second portion. The two intensity signals are used to calculate the temperature and emissivity of the substrate.

    Abstract translation: 描述了用于测量热处理室中的基板的温度的温度传感器。 该腔室包括一反射镜，当该基片定位在腔室中时，该反射器形成具有基底的反射腔。 温度传感器包括探针，其具有定位成接收来自反射腔的辐射的输入端，以及光学耦合到探针的输出端的检测器。 进入探头的辐射包括反射辐射和未反射的辐射。 检测器测量进入探头的辐射的第一部分的强度，以产生第一强度信号并测量进入探头的辐射的第二部分的强度以产生第二强度信号。 检测器被配置为使得反射辐射与非反射辐射的比率在第一部分中比第二部分高。 两个强度信号用于计算衬底的温度和发射率。

    Apparatus and method for thermally processing substrates including a processor using multiple detection signals
    8.
    发明授权
    Apparatus and method for thermally processing substrates including a processor using multiple detection signals 有权
    用于热处理基板的装置和方法，包括使用多个检测信号的处理器

    公开(公告)号：US6151446A

    公开(公告)日：2000-11-21

    申请号：US348147

    申请日：1999-07-06

    Applicant: Aaron Hunter ,  Mark Yam ,  Abhilash J. Mayur

    Inventor： Aaron Hunter ,  Mark Yam ,  Abhilash J. Mayur

    IPC: G01J5/02 ,  F27D19/00 ,  F27D21/00 ,  G01J5/00 ,  G01J5/08 ,  G01J5/10 ,  H01L21/00 ,  H01L21/205 ,  H01L21/324

    CPC classification number: H01L21/67248 ,  H01L21/67115

    Abstract: Apparatus and methods of thermally processing a substrate inside a processing chamber including a radiation source for heating the substrate are described. In one aspect, a detection system is configured to receive radiation from the substrate and to produce first and second detection system signals respectively representative of different first and second spectral portions of the received radiation. A processor is coupled to the detection system and configured to compute a measure of substrate temperature based upon the second detection system signal and to compute an indication of the relative accuracy of the computed measure of substrate temperature based upon the first detection system signal. In another aspect, the substrate is radiatively heated; radiation is received from the substrate and an intensity signal representative of the intensity of the received radiation is produced; an indication of the rate at which the substrate is being heated is computed based upon the intensity signal; and when the substrate is placed onto a substrate support inside the processing chamber is controlled based upon the computed heating rate indication.

    Abstract translation: 描述了在包括用于加热衬底的辐射源的处理室内热处理衬底的装置和方法。 在一个方面，检测系统被配置为从衬底接收辐射并产生分别代表所接收辐射的不同第一和第二光谱部分的第一和第二检测系统信号。 处理器耦合到检测系统并且被配置为基于第二检测系统信号计算衬底温度的量度，并且基于第一检测系统信号计算所计算的衬底温度的测量的相对精度的指示。 另一方面，衬底被辐射加热; 从衬底接收辐射，产生表示接收辐射强度的强度信号; 基于强度信号计算衬底被加热的速率的指示; 并且当基板被放置在基板上时，基于计算的加热速率指示来控制处理室内部的基板。

    Method of calibrating a temperature measurement system
    9.
    发明授权
    Method of calibrating a temperature measurement system 失效
    校准温度测量系统的方法

    公开(公告)号：US5848842A

    公开(公告)日：1998-12-15

    申请号：US650744

    申请日：1996-05-20

    Applicant: Bruce W. Peuse ,  Gary E. Miner ,  Mark Yam

    Inventor： Bruce W. Peuse ,  Gary E. Miner ,  Mark Yam

    IPC: H01L21/205 ,  G01J5/00 ,  G01J5/02 ,  G01J5/04 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  G01K15/00

    CPC classification number: H01L21/67109 ,  G01J5/0003 ,  G01J5/041 ,  Y10S977/918

    Abstract: A method of calibrating a temperature measurement system including the steps of heating a first substrate having a high emissivity value to a first process temperature; while the first substrate is at the first process temperature, calibrating a first probe and a second probe to produce temperature indications from the first substrate that are substantially the same, the first probe having associated therewith a first effective reflectivity and the second probe having associated therewith a second effective reflectivity, the first and second effective reflectivities being different; heating a second substrate having a low emissivity value to a second process temperature, the low emissivity value being lower than the high emissivity value; with the second substrate at the second process temperature, using both the first probe and the second probe to measure the temperature of the second substrate, the first probe producing a first temperature indication and the second probe producing a second temperature indication different from the first temperature indication; measuring a sensitivity of the temperature indication produced by the first probe to changes in substrate emissivity; and by using the measured sensitivity and the first and second temperature indications, computing a correction factor for the first probe, the correction factor to be applied to subsequent temperature readings of the first probe to produce corrected temperature readings.

    Abstract translation: 一种校准温度测量系统的方法，包括以下步骤：将具有高发射率值的第一衬底加热至第一工艺温度; 而第一衬底处于第一工艺温度时，校准第一探针和第二探针，以从第一衬底产生基本上相同的温度指示，第一探针与其相关联地具有第一有效反射率，而第二探针具有与之相关联 第二有效反射率，第一和第二有效反射率不同; 将具有低发射率值的第二基板加热到第二处理温度，低发射率值低于高发射率值; 其中所述第二衬底处于第二工艺温度，使用所述第一探针和所述第二探针两者来测量所述第二衬底的温度，所述第一探针产生第一温度指示，所述第二探针产生不同于所述第一温度的第二温度指示 适应症 测量由第一探针产生的温度指示对基板发射率的变化的灵敏度; 并且通过使用测量的灵敏度和第一和第二温度指示，计算第一探针的校正因子，将要应用于第一探针的后续温度读数的校正因子以产生校正的温度读数。

    Method and apparatus for measuring substrate temperatures
    10.
    发明授权
    Method and apparatus for measuring substrate temperatures 失效
    测量基板温度的方法和装置

    公开(公告)号：US5755511A

    公开(公告)日：1998-05-26

    申请号：US641477

    申请日：1996-05-01

    Applicant: Bruce W. Peuse ,  Gary E. Miner ,  Mark Yam

    Inventor： Bruce W. Peuse ,  Gary E. Miner ,  Mark Yam

    IPC: G01J5/02 ,  G01J5/00 ,  G01J5/04 ,  G01J5/08 ,  G01J5/10 ,  G01J5/58 ,  H01L21/205 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  H01L21/66 ,  G01K15/00

    CPC classification number: G01J5/041 ,  G01J5/0003 ,  H01L21/67109

    Abstract: A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature; using a first, a second and a third probe to measure the temperature of the substrate, the first and third probes having a first effective reflectivity and the second probe having a second effective reflectivity, the first probe producing a first temperature indication, the second probe producing a second temperature indication and the third probe producing a third temperature indication, and wherein the first and second effective reflectivities are different; and from the first and second temperature indications, deriving a corrected temperature reading for the first probe, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than an uncorrected readings produced by both the first and second probes. Thereafter, deriving a corrected temperature reading for the third probe by adjusting the temperature correction calculated for the first probe according to the measured emissivity sensitivity associated with the environment of the third probe to provide a corrected temperature reading that is a more accurate indicator of an actual temperature of the substrate in the environment of the third probe. An apparatus for carrying out the method is also disclosed.

    Abstract translation: 一种校正用于加热衬底的热处理室中的温度探针读数的方法，包括以下步骤：将衬底加热至处理温度; 使用第一，第二和第三探针来测量衬底的温度，所述第一和第三探针具有第一有效反射率，所述第二探针具有第二有效反射率，所述第一探针产生第一温度指示，所述第二探针 产生第二温度指示，所述第三探测器产生第三温度指示，并且其中所述第一和第二有效反射率是不同的; 并且从第一和第二温度指示，导出用于第一探针的校正温度读数，其中校正温度读数是比由第一和第二探针产生的未校正读数更准确地指示衬底的实际温度。 此后，通过根据与第三探针的环境相关联的测量的发射率灵敏度调节针对第一探针计算的温度校正，得出校正的温度读数，以提供校正温度读数，该校正温度读数是实际的更准确的指标 在第三探针的环境中的衬底的温度。 还公开了一种用于执行该方法的装置。

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