Abstract:
A charged particle beam writing apparatus includes a writing data generation circuitry to input character information or information of an item selected, for specifying an apparatus quality check pattern used for evaluating apparatus quality of a charged particle beam writing apparatus, and to generate writing data of the apparatus quality check pattern based on the character information or the information of the item selected, and a combination circuitry to input writing data of an actual chip pattern to be written on a target object, and to combine the writing data of the actual chip pattern and the writing data of the apparatus quality check pattern such that the actual chip pattern and the apparatus quality check pattern do not overlap with each other.
Abstract:
An evaluation method according to an embodiment is to evaluate a precision of an aperture formed with multiple openings, and includes steps of forming a first evaluation pattern based on evaluation data using multiple electron beams generated by electron beam that has passed through the aperture, dividing the aperture into multiple regions, each of the regions including the multiple openings and defining the multiple divided regions, forming a second evaluation pattern based on evaluation data using the electron beam that has passed through a first divided region among the multiple divided regions, comparing the first evaluation pattern with the second evaluation pattern, and evaluating the precision of the aperture based on the comparison result between the first evaluation pattern and the second evaluation pattern.
Abstract:
A charged particle beam writing apparatus includes a number of shots calculation circuit to calculate the number of shots in the case where a deflection region is irradiated with a shot of a charged particle beam, a deflection position correcting circuit to correct a deflection position of the charged particle beam to be shot in the deflection region, depending on the number of shots to be shot in the deflection region, and a deflector to deflect the charged particle beam to a corrected deflected position on the target object.
Abstract:
A settling time acquisition method includes writing at least one reference pattern formed by at least one shot of a charged particle beam, writing an evaluation pattern, which has been formed by combination of the first and second shots of a charged particle beam shaped to first and second patterns of different sizes and whose width size is the same as that of the reference pattern, while changing, concerning beam shaping of the second shot, a settling time of a DAC amplifier, wherein writing is performed for each settling time, measuring the width size of the reference pattern, measuring the width size of the evaluation pattern for each settling time, calculating, for each settling time, a difference between the width sizes of the reference and evaluation patterns, and acquiring a settling time from each settling time of the DAC amplifier when the difference is not exceeding a threshold value.
Abstract:
A method for acquiring a settling time according to an embodiment, includes writing a plurality of first patterns, arranged in positions apart from each other by a deflection movement amount, by using a DAC amplifier in which a settling time of the DAC amplifier is set to a first time to be a sufficient settling time; writing a plurality of second patterns, in a manner where corresponding first and second patterns are in a position adjacent, for each second time of different second times containing the sufficient settling time set as variable; measuring a width dimension of each of a plurality of combined patterns after adjacent first and second patterns are combined for the each second time set as variable; and acquiring the settling time of the DAC amplifier needed for deflection by the deflection movement amount, using the width dimensions.
Abstract:
An evaluation method according to an embodiment is to evaluate a precision of an aperture formed with multiple openings, and includes steps of forming a first evaluation pattern based on evaluation data using multiple electron beams generated by electron beam that has passed through the aperture, dividing the aperture into multiple regions, each of the regions including the multiple openings and defining the multiple divided regions, forming a second evaluation pattern based on evaluation data using the electron beam that has passed through a first divided region among the multiple divided regions, comparing the first evaluation pattern with the second evaluation pattern, and evaluating the precision of the aperture based on the comparison result between the first evaluation pattern and the second evaluation pattern.
Abstract:
According to one embodiment, a method of adjusting a charged particle beam drawing apparatus includes obtaining an offset amount in beam size to be set in the charged particle beam drawing apparatus. The method includes forming a linear evaluation pattern on a substrate by changing number of divisions of a beam with a predetermined size and performing drawing by using divided beams, obtaining a change amount in a line width of the evaluation pattern from a design dimension for each number of divisions, and calculating the offset amount by fitting a model function to the change amount for each number of divisions, the model function being obtained by modeling a pattern line width based on a distribution of energy given by charged particle beams.
Abstract:
In one embodiment, a multi-charged-particle-beam writing method includes performing a tracking operation such that, while a substrate placed on a stage moving continuously is being irradiated with multiple beams including a plurality of charged particle beams, deflection positions of the multiple beams follow movement of the stage, and applying the multiple beams to the substrate having a writing area including a plurality of rectangular regions arranged in a mesh during the tracking operation such that each of the plurality of rectangular regions is irradiated with the multiple beams. Each rectangular region includes a plurality of pixels each having a predetermined size and arranged in a mesh. At least one subset of the plurality of pixels is irradiated with the multiple beams in a first shot order and is then irradiated with the multiple beams in a second shot order different from the first shot order.
Abstract:
According to one aspect of the present invention, a method of correcting a position of a stage mechanism, includes generating a two-dimensional map of a distortion amount at a position of a stage by applying a distortion amount of a position in a first direction of the stage at each of measured positions in a second direction as a distortion amount of a position in the first direction of the stage at each position in the second direction at each position in the first direction and by applying a distortion amount of a position in the second direction of the stage at each of measured positions in the first direction as a distortion amount of a position in the second direction of the stage at each position in the first direction at each position in the second direction; and correcting position data by using the two-dimensional map.
Abstract:
According to one embodiment, a method of adjusting a charged particle beam drawing apparatus includes obtaining an offset amount in beam size to be set in the charged particle beam drawing apparatus. The method includes forming a linear evaluation pattern on a substrate by changing number of divisions of a beam with a predetermined size and performing drawing by using divided beams, obtaining a change amount in a line width of the evaluation pattern from a design dimension for each number of divisions, and calculating the offset amount by fitting a model function to the change amount for each number of divisions, the model function being obtained by modeling a pattern line width based on a distribution of energy given by charged particle beams.