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1.发明授权公开(公告)号：US10373798B2
公开(公告)日：2019-08-06
申请号：US15902157
申请日：2018-02-22
Applicant: NUFLARE TECHNOLOGY, INC.
Inventor： Hidekazu Takekoshi
IPC: H01J37/28 , H01J37/26 , H01J37/244 , H01J37/153 , H01J37/22
Abstract: A multi charged particle beam inspection apparatus includes a plurality of sensors, arranged inside or on a periphery of a secondary electron image acquisition mechanism, to measure a plurality of interfering factors, a determination circuit to determine, for each interfering factor, whether change exceeding a corresponding threshold is a first case which returns to the original state within a predetermined time period, or a second case which does not return to the original state even if the predetermined time period has passed, and a comparison circuit to input a reference image of a region corresponding to the secondary electron image acquired, and compare the secondary electron image with the reference image, wherein in the case where change of the second case occurs, the secondary electron image acquisition mechanism suspends the acquisition operation of the secondary electron image, and calibrates a change amount of the multiple charged particle beams.
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公开(公告)号：US20190096631A1
公开(公告)日：2019-03-28
申请号：US16132618
申请日：2018-09-17
Applicant: NUFLARE TECHNOLOGY, INC.
Inventor： Hidekazu Takekoshi
CPC classification number: H01J37/268 , G06T7/001 , H01J37/22 , H01J37/265 , H01J37/28 , H01J2237/082 , H01J2237/1501 , H01J2237/2817
Abstract: An electron beam image acquisition apparatus includes a deflector to deflect an electron beam, a deflection control system to control the deflector, a measurement circuitry to measure, while moving a stage for placing thereon a substrate on which a figure pattern is formed, an edge position of a mark pattern arranged on the stage by scanning the mark pattern with an electron beam, a delay time calculation circuitry to calculate, using information on the edge position, a deflection control delay time which is a delay time to start deflection control occurring in the deflection control system, a correction circuitry to correct, using the deflection control delay time, a deflection position of the electron beam, and an image acquisition mechanism to include the deflector and acquire an image of the figure pattern at a corrected deflection position on the substrate.
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公开(公告)号：US11342157B2
公开(公告)日：2022-05-24
申请号：US17126802
申请日：2020-12-18
Applicant: NuFlare Technology, Inc.
Inventor： Hidekazu Takekoshi
IPC: H01J37/244 , H01J37/20 , H01J37/28 , H01J37/147
Abstract: A charged particle beam inspection apparatus includes a movable stage, configured to hold a substrate placed on the movable stage; a stage control circuit, configured to continuously move the movable stage in a direction opposite to a first direction; a deflection control circuit, configured to control a deflector to collectively deflect multiple beams to an N×N′ small region group including N small regions, the collective deflection includes performing tracking deflection of the multiple beams and collectively deflecting the multiple beams to a new group of N×N′ small regions and sequentially perform a first and a second step, a detector configured to detect secondary electrons emitted from the substrate due to irradiation of the substrate with the multiple beams, and combinations of a value of N and a value of M are set such that the greatest common divisor of the value of N and the value of M is 1.
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Patent Agency Ranking
4.发明申请公开(公告)号：US20180210353A1
公开(公告)日：2018-07-26
申请号：US15834351
申请日：2017-12-07
Applicant: NUFLARE TECHNOLOGY, INC.
Inventor： Rieko Nishimura , Hidekazu Takekoshi
CPC classification number: G03F9/7049 , G01B9/02 , G03F1/78 , G03F7/2059 , G03F7/70383 , G03F7/70725 , G03F7/70775 , H01J37/3175
Abstract: According to one aspect of the present invention, a method of correcting a position of a stage mechanism, includes generating a two-dimensional map of a distortion amount at a position of a stage by applying a distortion amount of a position in a first direction of the stage at each of measured positions in a second direction as a distortion amount of a position in the first direction of the stage at each position in the second direction at each position in the first direction and by applying a distortion amount of a position in the second direction of the stage at each of measured positions in the first direction as a distortion amount of a position in the second direction of the stage at each position in the first direction at each position in the second direction; and correcting position data by using the two-dimensional map.
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公开(公告)号：US10896801B2
公开(公告)日：2021-01-19
申请号：US16419665
申请日：2019-05-22
Applicant: NuFlare Technology, Inc.
Inventor： Kazuhiko Inoue , Yoshihiro Izumi , Hidekazu Takekoshi
IPC: H01J37/153 , G01N21/956 , G01N21/95 , H01L21/67 , G06T7/00 , G06T7/11 , H01J37/147 , H01J37/20 , H01J37/244 , H01J37/141
Abstract: A multiple-electron-beam-image acquisition apparatus includes an electromagnetic lens to receive and refract multiple electron beams, an aberration corrector, disposed in a magnetic field of the electromagnetic lens, to correct aberration of the multiple electron beams, an aperture-substrate, disposed movably at the upstream of the aberration corrector with respect to an advancing direction of the multiple electron beams, to selectively make an individual beam of the multiple electron beams pass therethrough independently, a movable stage to dispose thereon the aberration corrector, a stage control circuit, using an image caused by the individual beam selectively made to pass, to move the stage to align the position of the aberration corrector to the multiple electron beams having been relatively aligned with the electromagnetic lens, and a detector to detect multiple secondary electron beams emitted because the target object surface is irradiated with multiple electron beams having passed through the aberration corrector.
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公开(公告)号：US10665422B2
公开(公告)日：2020-05-26
申请号：US16132618
申请日：2018-09-17
Applicant: NUFLARE TECHNOLOGY, INC.
Inventor： Hidekazu Takekoshi
Abstract: An electron beam image acquisition apparatus includes a deflector to deflect an electron beam, a deflection control system to control the deflector, a measurement circuitry to measure, while moving a stage for placing thereon a substrate on which a figure pattern is formed, an edge position of a mark pattern arranged on the stage by scanning the mark pattern with an electron beam, a delay time calculation circuitry to calculate, using information on the edge position, a deflection control delay time which is a delay time to start deflection control occurring in the deflection control system, a correction circuitry to correct, using the deflection control delay time, a deflection position of the electron beam, and an image acquisition mechanism to include the deflector and acquire an image of the figure pattern at a corrected deflection position on the substrate.
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7.发明授权公开(公告)号：US10345724B2
公开(公告)日：2019-07-09
申请号：US15834351
申请日：2017-12-07
Applicant: NUFLARE TECHNOLOGY, INC.
Inventor： Rieko Nishimura , Hidekazu Takekoshi
Abstract: According to one aspect of the present invention, a method of correcting a position of a stage mechanism, includes generating a two-dimensional map of a distortion amount at a position of a stage by applying a distortion amount of a position in a first direction of the stage at each of measured positions in a second direction as a distortion amount of a position in the first direction of the stage at each position in the second direction at each position in the first direction and by applying a distortion amount of a position in the second direction of the stage at each of measured positions in the first direction as a distortion amount of a position in the second direction of the stage at each position in the first direction at each position in the second direction; and correcting position data by using the two-dimensional map.
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8.发明申请公开(公告)号：US20180286630A1
公开(公告)日：2018-10-04
申请号：US15902157
申请日：2018-02-22
Applicant: NUFLARE TECHNOLOGY, INC.
Inventor： Hidekazu Takekoshi
IPC: H01J37/22 , H01J37/244 , H01J37/26 , H01J37/153
CPC classification number: H01J37/26 , H01J37/153 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/153 , H01J2237/2002 , H01J2237/248 , H01J2237/2806 , H01J2237/2809 , H01J2237/2817 , H01J2237/2826
Abstract: A multi charged particle beam inspection apparatus includes a plurality of sensors, arranged inside or on a periphery of a secondary electron image acquisition mechanism, to measure a plurality of interfering factors, a determination circuit to determine, for each interfering factor, whether change exceeding a corresponding threshold is a first case which returns to the original state within a predetermined time period, or a second case which does not return to the original state even if the predetermined time period has passed, and a comparison circuit to input a reference image of a region corresponding to the secondary electron image acquired, and compare the secondary electron image with the reference image, wherein in the case where change of the second case occurs, the secondary electron image acquisition mechanism suspends the acquisition operation of the secondary electron image, and calibrates a change amount of the multiple charged particle beams.
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