Abstract:
Regular chip packages that store user data therein and error-correction chip packages that store an error correction code therein are mounted on a module substrate. The module substrate has first and second mounting areas of different coordinates in an X direction, and the second mounting area has third and fourth mounting areas of different Y coordinates. The regular packages are oppositely arranged in the first mounting area on a surface and the back surface of the module substrate. The error-correction chip packages are oppositely arranged in the third mounting area on the surface and the back surface of the module substrate. A memory buffer that buffers user data and an error correction code is arranged in the fourth mounting area.
Abstract:
The present invention provides a novel wiring method for LR-DIMM of VLP type that conforms to LR-DIMM technology. The LR-DIMM comprises a plurality of DRAMs mounted on a board, two connectors mounted on the board for receiving data, and a buffer device mounted on the board for redriving data applied to the two connectors to supply the data to the plurality of DRAMs. The buffer device is located near the center of the board on which the two connectors are arranged at both ends thereof, and supplies data from each connector to DRAMs arranged on the opposite side to the connector.
Abstract:
The present invention provides a novel wiring method for LR-DIMM of VLP type that conforms to LR-DIMM technology. The LR-DIMM comprises a plurality of DRAMs mounted on a board, two connectors mounted on the board for receiving data, and a buffer device mounted on the board for redriving data applied to the two connectors to supply the data to the plurality of DRAMs. The buffer device is located near the center of the board on which the two connectors are arranged at both ends thereof, and supplies data from each connector to DRAMs arranged on the opposite side to the connector.
Abstract:
Regular chip packages that store user data therein and error-correction chip packages that store an error correction code therein are mounted on a module substrate. The module substrate has first and second mounting areas of different coordinates in an X direction, and the second mounting area has third and fourth mounting areas of different Y coordinates. The regular packages are oppositely arranged in the first mounting area on a surface and the back surface of the module substrate. The error-correction chip packages are oppositely arranged in the third mounting area on the surface and the back surface of the module substrate. A memory buffer that buffers user data and an error correction code is arranged in the fourth mounting area.
Abstract:
A system includes: a controller, a first memory module connected to the controller through a first data bus, and a second memory module connected to the controller through a second data bus, wherein the first memory module includes: first and second memory chips; a first data terminal connected to the first data bus, and a first switch unit that electrical connects the first data terminal with either the first memory chip and the second memory chip, and the second module includes: third and fourth memory chips; a second data terminal connected to the second data bus, and a second switch unit that switches over electrical connection of the second data terminal with either the third memory chip or the fourth memory chip.
Abstract:
The present invention provides a novel wiring method for LR-DIMM of VLP type that conforms to LR-DIMM technology. The LR-DIMM comprises a plurality of DRAMs mounted on a board, two connectors mounted on the board for receiving data, and a buffer device mounted on the board for redriving data applied to the two connectors to supply the data to the plurality of DRAMs. The buffer device is located near the center of the board on which the two connectors are arranged at both ends thereof, and supplies data from each connector to DRAMs arranged on the opposite side to the connector.
Abstract:
The present invention provides a novel wiring method for LR-DIMM of VLP type that conforms to LR-DIMM technology. The LR-DIMM comprises a plurality of DRAMs mounted on a board, two connectors mounted on the board for receiving data, and a buffer device mounted on the board for redriving data applied to the two connectors to supply the data to the plurality of DRAMs. The buffer device is located near the center of the board on which the two connectors are arranged at both ends thereof, and supplies data from each connector to DRAMs arranged on the opposite side to the connector.
Abstract:
A circuit board according to the present invention includes a main surface, a back surface parallel to the main surface, a side surface positioned between edges of the main surface and the back surface, and first and second board terminals covering a portion of the main surface and a portion of the side surface, respectively. According to the present invention, because the board terminals are provided not only on the main surface but also on the side surface of the circuit board, the total number of board terminals can be increased while maintaining sufficient pitch and width of the board terminals.
Abstract:
The present invention provides a novel wiring method for LR-DIMM of VLP type that conforms to LR-DIMM technology. The LR-DIMM comprises a plurality of DRAMs mounted on a board, two connectors mounted on the board for receiving data, and a buffer device mounted on the board for redriving data applied to the two connectors to supply the data to the plurality of DRAMs. The buffer device is located near the center of the board on which the two connectors are arranged at both ends thereof, and supplies data from each connector to DRAMs arranged on the opposite side to the connector.
Abstract:
The present invention provides a novel wiring method for LR-DIMM of VLP type that conforms to LR-DIMM technology. The LR-DIMM comprises a plurality of DRAMs mounted on a board, two connectors mounted on the board for receiving data, and a buffer device mounted on the board for redriving data applied to the two connectors to supply the data to the plurality of DRAMs. The buffer device is located near the center of the board on which the two connectors are arranged at both ends thereof, and supplies data from each connector to DRAMs arranged on the opposite side to the connector.