公开(公告)号：US09915628B2

公开(公告)日：2018-03-13

申请号：US15174260

申请日：2016-06-06

Applicant: TECHINSIGHTS INC.

Inventor： Christopher Pawlowicz ,  Alexander Sorkin ,  Michael W. Phaneuf ,  Alexander Krechmer ,  Ken G. Lagarec

IPC: G21G5/00 ,  G01N23/225 ,  H01J37/22 ,  H01L21/66 ,  G01R31/303

CPC classification number: G01N23/2255 ,  G01R31/303 ,  H01J37/222 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/2803 ,  H01J2237/2809 ,  H01J2237/31749 ,  H01L22/12

Abstract: Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.

公开(公告)号：US09383327B2

公开(公告)日：2016-07-05

申请号：US14309674

申请日：2014-06-19

Applicant: TECHINSIGHTS, INC.

Inventor： Chris Pawlowicz ,  Alexander Sorkin ,  Michael W. Phaneuf ,  Alexander Krechmer ,  Ken G. Lagarec

IPC: G21G5/00 ,  G01N23/225 ,  H01J37/22 ,  H01L21/66 ,  G01R31/303

CPC classification number: G01N23/2255 ,  G01R31/303 ,  H01J37/222 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/2803 ,  H01J2237/2809 ,  H01J2237/31749 ,  H01L22/12

Abstract: Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.

Abstract translation: 使用聚焦离子束成像技术在集成电路上跟踪电路的方法和系统。 集成电路上的第一组件或节点耦合到同一集成电路上的第二组件或节点。 在将外部偏压施加到第一部件或节点之后，将聚焦离子束施加到集成电路，并且使用电子检测器拍摄图像。 耦合到第二组件或节点的集成电路上的特征或组件将在所得到的图像上呈现高对比度。 该方法还可以包括向节点或部件施加偏压，然后使用聚焦离子束成像技术（通过电子检测器）来获得集成电路的图像。 耦合到节点的组件将在所得到的图像中以高对比度出现。