公开(公告)号：US10096465B2

公开(公告)日：2018-10-09

申请号：US15471360

申请日：2017-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keisuke Yoshida

IPC: H01L21/02 ,  B05C9/14 ,  B05C11/10 ,  B05D3/02 ,  B05D3/06 ,  H01L21/32 ,  C23C18/12 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate processing method includes applying a solution of a compound containing a metal oxide to a surface of a wafer to form a liquid film of the solution on the surface of the wafer, heating the liquid film at a first temperature lower than a crosslinking temperature of the compound, and irradiating the liquid film with energy rays to form a coating film containing the metal oxide on the surface, after heating the liquid film at the first temperature.

公开(公告)号：US20150371894A1

公开(公告)日：2015-12-24

申请号：US14744257

申请日：2015-06-19

Applicant: Tokyo Electron Limited

Inventor： Masatoshi Kaneda ,  Yuzo Ohishi ,  Keisuke Yoshida

IPC: H01L21/768 ,  B05C11/10 ,  B05C11/08 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/67069 ,  B05C11/08 ,  B05C11/1002 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/68742

Abstract: A substrate processing method can remove a part of a processing target film formed on a surface of a substrate W under a normal pressure atmosphere while suppressing an influence upon the substrate. A source material of the processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere, is coated on the substrate W, and the processing target film is formed by heating the source material coated on the substrate W. Then, the substrate W having thereon the processing target film is placed within a processing chamber under the oxygen-containing atmosphere where a gas flow velocity is equal to or smaller than 10 cm/sec, and the part of the processing target film is removed by irradiating the ultraviolet ray to the substrate W.

Abstract translation: 基板处理方法可以在抑制对基板的影响的同时，在常压气氛下除去形成在基板W的表面上的一部分加工对象膜。 通过在含氧气氛下在其上照射紫外线而分解的处理对象膜的原料被涂覆在基板W上，并且通过加热涂覆在基板W上的源材料形成加工对象膜。 然后，将其上具有处理目标薄膜的基板W放置在气体流速为10cm / sec以下的含氧气氛下的处理室内，并且将处理对象薄膜的一部分通过 将紫外线照射到基板W.

公开(公告)号：US10656526B2

公开(公告)日：2020-05-19

申请号：US15823661

申请日：2017-11-28

Applicant: Tokyo Electron Limited

Inventor： Yohei Sano ,  Shinichiro Kawakami ,  Masashi Enomoto ,  Takahiro Shiozawa ,  Keisuke Yoshida ,  Tomoya Onitsuka

IPC: H01L21/324 ,  G03F7/38 ,  H01L21/027 ,  G03F7/004 ,  H01L21/67 ,  H01L21/3105

Abstract: A thermal treatment apparatus performs a thermal treatment on a metal-containing film formed on a substrate. The thermal treatment apparatus includes a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film. At the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.

公开(公告)号：US10591823B2

公开(公告)日：2020-03-17

申请号：US14974810

申请日：2015-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keisuke Yoshida ,  Yuzo Ohishi ,  Keisuke Sasaki ,  Shoichi Terada

IPC: G03F7/20 ,  H01L21/67

Abstract: A substrate processing apparatus includes a hot plate which supports and heats a substrate, a light source which emits etching energy beam such that the etching energy beam etches the substrate held by the hot plate, a window device which is positioned between the light source and the hot plate and transmits the etching energy beam emitted by the light source toward the substrate, and an adjusting device which adjusts emission amounts of the etching energy beam from portions of the window device toward the substrate such that the adjusting device reduces difference in etching amounts of portions of the substrate.

公开(公告)号：US09514951B2

公开(公告)日：2016-12-06

申请号：US14744257

申请日：2015-06-19

Applicant: Tokyo Electron Limited

Inventor： Masatoshi Kaneda ,  Yuzo Ohishi ,  Keisuke Yoshida

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/67069 ,  B05C11/08 ,  B05C11/1002 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/68742

Abstract: A substrate processing method can remove a part of a processing target film formed on a surface of a substrate W under a normal pressure atmosphere while suppressing an influence upon the substrate. A source material of the processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere, is coated on the substrate W, and the processing target film is formed by heating the source material coated on the substrate W. Then, the substrate W having thereon the processing target film is placed within a processing chamber under the oxygen-containing atmosphere where a gas flow velocity is equal to or smaller than 10 cm/sec, and the part of the processing target film is removed by irradiating the ultraviolet ray to the substrate W.

Abstract translation: 基板处理方法可以在抑制对基板的影响的同时，在常压气氛下除去形成在基板W的表面上的一部分加工对象膜。 通过在含氧气氛下在其上照射紫外线而分解的处理对象膜的原料被涂覆在基板W上，并且通过加热涂覆在基板W上的源材料形成加工对象膜。 然后，将其上具有处理目标薄膜的基板W放置在气体流速为10cm / sec以下的含氧气氛下的处理室内，并且将处理对象薄膜的一部分通过 将紫外线照射到基板W.

公开(公告)号：US20170047233A1

公开(公告)日：2017-02-16

申请号：US15340027

申请日：2016-11-01

Applicant: Tokyo Electron Limited

Inventor： Masatoshi Kaneda ,  Yuzo Ohishi ,  Keisuke Yoshida

IPC: H01L21/67 ,  B05C11/08 ,  B05C11/10 ,  H01L21/311

CPC classification number: H01L21/67069 ,  B05C11/08 ,  B05C11/1002 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/68742

Abstract: A substrate processing apparatus includes a placing table configured to hold a substrate having a processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere; a processing chamber, configured to accommodate therein the substrate placed on the placing table, having therein the oxygen-containing atmosphere; and an ultraviolet ray irradiation device configured to irradiate the ultraviolet ray to the substrate within the processing chamber. Further, the placing table is provided with a surrounding member configured to surround the substrate placed on the placing table and restrict a gas introduction amount from an outside of the substrate toward above the substrate.

Abstract translation: 基板处理装置包括：载置台，其配置成保持具有处理目标膜的基板，所述基板在含氧气氛下通过照射紫外线而分解; 处理室，其构造成在其中容纳放置在放置台上的衬底，其中具有含氧气氛; 以及被配置为将紫外线照射到处理室内的基板的紫外线照射装置。 此外，放置台设置有周围构件，其构造成围绕放置在放置台上的基板，并且限制从基板的外部朝向基板的上方的气体引入量。

公开(公告)号：US20240295821A1

公开(公告)日：2024-09-05

申请号：US18550535

申请日：2022-02-21

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Fujii ,  Soichiro Okada ,  Yasuyuki Ido ,  Makoto Muramatsu ,  Keisuke Yoshida ,  Nanoka Miyahara

IPC: G03F7/16 ,  H01L21/027

CPC classification number: G03F7/162 ,  G03F7/168 ,  H01L21/0274

Abstract: A substrate processing method includes forming a silicon carbide film on a spin on carbon film formed on a substrate; and forming a chemically amplified resist film for EUV on the silicon carbide film.

公开(公告)号：US11443964B2

公开(公告)日：2022-09-13

申请号：US15340027

申请日：2016-11-01

Applicant: Tokyo Electron Limited

Inventor： Masatoshi Kaneda ,  Yuzo Ohishi ,  Keisuke Yoshida

IPC: H01L21/67 ,  B05C11/08 ,  B05C11/10 ,  H01L21/311 ,  H01L21/677 ,  H01L21/687 ,  H01L21/02 ,  H01L21/3105

Abstract: A substrate processing apparatus includes a placing table configured to hold a substrate having a processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere; a processing chamber, configured to accommodate therein the substrate placed on the placing table, having therein the oxygen-containing atmosphere; and an ultraviolet ray irradiation device configured to irradiate the ultraviolet ray to the substrate within the processing chamber. Further, the placing table is provided with a surrounding member configured to surround the substrate placed on the placing table and restrict a gas introduction amount from an outside of the substrate toward above the substrate.