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    METHOD OF MANUFACTURING STAMP FOR PLASMONIC NANOLITHOGRAPHY APPARATUS AND PLASMONIC NANOLITHOGRAPHY APPARATUS
    1.
    发明申请
    METHOD OF MANUFACTURING STAMP FOR PLASMONIC NANOLITHOGRAPHY APPARATUS AND PLASMONIC NANOLITHOGRAPHY APPARATUS 有权
    等离子体纳米尺度装置和等离子体纳米尺度装置的制造方法

    公开(公告)号：US20130340929A1

    公开(公告)日：2013-12-26

    申请号：US13726684

    申请日：2012-12-26

    Applicant: KOREA INSTITUTE OF MACHINERY & MATERIALS

    Inventor： Eung-Sug LEE ,  Joo Yun Jung ,  Jun Hyuk Choi ,  Jae Won Hahn

    IPC: B32B37/26 ,  G03F7/20

    CPC classification number: B32B37/26 ,  B81C99/009 ,  B81C2201/0152 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017 ,  G03F7/2004

    Abstract: There is provided a method of manufacturing a stamp for a plasmonic nanolithography apparatus. The method includes forming metal patterns on a substrate, coating a hydrophobic thin film on external surfaces of the metal patterns to hydrophobic processing the external surfaces of the metal patterns, selectively hydrophilic processing only the external surfaces of the metal patterns, laminating a buffer layer on the substrate and the metal patterns, and transcribing the metal patterns and the buffer layer from the substrate to a base formed of light transmission material to be combined with the base.

    Abstract translation: 提供了一种制造等离子体激光纳米光刻设备的印模的方法。 该方法包括在基板上形成金属图案，在金属图案的外表面上涂覆疏水性薄膜以对金属图案的外表面进行疏水处理，仅选择亲水处理金属图案的外表面，将缓冲层层压在 基板和金属图案，并且将金属图案和缓冲层从基板转印到由光透射材料形成的基底以与基底结合。

    PROCESS FOR MAKING A PATTERNED METAL OXIDE STRUCTURE
    2.
    发明申请
    PROCESS FOR MAKING A PATTERNED METAL OXIDE STRUCTURE 有权
    制作图案金属氧化物结构的方法

    公开(公告)号：US20130078796A1

    公开(公告)日：2013-03-28

    申请号：US13625400

    申请日：2012-09-24

    Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND R

    Inventor： Ramakrishnan GANESAN ,  Jarrett DUMOND ,  M.S.M. SAIFULLAH ,  Su Hui LIM ,  Hazrat HUSSAIN ,  Hong Yee LOW

    IPC: H01L21/283

    CPC classification number: H01L21/283 ,  B81C1/0046 ,  B81C2201/0152 ,  B82Y10/00 ,  B82Y40/00 ,  C23C18/04 ,  C23C18/06 ,  C23C18/1216 ,  G03F7/0002 ,  G03F7/0043 ,  G03F7/027 ,  H01L29/0676

    Abstract: There is provided a process for making a patterned metal oxide structure comprising the step of heating an imprint structure comprising a polymerized organometallic compound to remove organic material and thereby form the patterned metal oxide structure, wherein the imprint structure is formed by polymerizing a resist mixture comprising at least one olefinic polymerizable compound and a polymerizable organometallic compound having, e.g., at least one carboxylate of Formula 1: wherein n is 1-12; and each R is independently selected from the group consisting of hydrogen, alkyl, alkenyl, alkynyl, cycloakyl, cycloakenyl, aryl, and aralkyl.

    Abstract translation: 提供了一种用于制造图案化金属氧化物结构的方法，其包括加热包含聚合的有机金属化合物的压印结构以除去有机材料并由此形成图案化的金属氧化物结构的步骤，其中通过聚合抗蚀剂混合物形成压印结构，所述抗蚀剂混合物包含 至少一种烯属聚合性化合物和具有例如至少一种式1羧酸酯的可聚合的有机金属化合物：其中n为1-12; 并且每个R独立地选自氢，烷基，烯基，炔基，环烷基，环辛基，芳基和芳烷基。

    Method for manufacturing MEMS structures
    3.
    发明申请
    Method for manufacturing MEMS structures 有权
    制造MEMS结构的方法

    公开(公告)号：US20050170544A1

    公开(公告)日：2005-08-04

    申请号：US10769346

    申请日：2004-01-30

    Applicant: M.C. Chang ,  H.S. Wu ,  Tsang-Mu Lai

    Inventor： M.C. Chang ,  H.S. Wu ,  Tsang-Mu Lai

    IPC: B81B3/00 ,  H01L21/00

    CPC classification number: B81C99/0085 ,  B81C2201/0108 ,  B81C2201/0133 ,  B81C2201/0152

    Abstract: A method for forming a free standing micro-structural member including providing a substrate; blanket depositing a first sacrificial resist layer over the substrate; exposing and developing the first sacrificial resist layer to form a first resist portion; subjecting the first resist portion to at least a hard bake process to form the first resist portion having a predetermined first smaller volume compared to a desired final resist portion volume; blanket depositing at least a second sacrificial resist layer followed by exposure, development and the at least a hard bake process to form the final resist portion volume; and, depositing at least one structural material layer over the final resist portion.

    Abstract translation: 一种形成独立式微结构构件的方法，包括提供基底; 在衬底上铺设第一牺牲抗蚀剂层; 曝光和显影第一牺牲抗蚀剂层以形成第一抗蚀剂部分; 使所述第一抗蚀剂部分至少进行硬烘烤处理，以形成具有预定的第一较小体积的第一抗蚀剂部分，与期望的最终抗蚀剂部分体积相比; 毯毯沉积至少第二牺牲抗蚀剂层，随后曝光，显影和至少硬烘烤工艺以形成最终的抗蚀剂部分体积; 并且在最终抗蚀剂部分上沉积至少一个结构材料层。

    Micro electrical mechanical systems
    7.
    发明授权
    Micro electrical mechanical systems 失效
    微机电系统

    公开(公告)号：US07067239B2

    公开(公告)日：2006-06-27

    申请号：US10461825

    申请日：2003-06-13

    Applicant: Samuel Obi ,  Michael Gale

    Inventor： Samuel Obi ,  Michael Gale

    IPC: G02B26/00

    CPC classification number: B81C1/0019 ,  B81B2201/047 ,  B81B2203/0118 ,  B81C2201/0152 ,  Y10T29/49117

    Abstract: A method for fabricating optical MEMS (optical Micro-Electro-Mechanical Systems or Micro-Opto-Electro-Mechanical Systems (MOEMS)) is described. The basic process involves deposition and patterning of a sacrificial spacer layer and a combined molding and photolithography step.The method described allows the fabrication of micromechanical elements incorporating micro-optical structures such as lenses (diffractive or refractive), gratings (for polarizers or resonant filters), waveguides or other micro-optical relief structures fabricated by UV-curing replication processes.

    Abstract translation: 描述了制造光学MEMS（光学微机电系统或微机电系统（MOEMS））的方法。 基本过程涉及牺牲间隔层的沉积和图案化以及组合的模制和光刻步骤。 所描述的方法允许制造结合微光学结构的微机械元件，例如透镜（衍射或折射），光栅（用于偏振器或谐振滤光器），波导或通过UV固化复制工艺制造的其它微光学浮雕结构。

    Systems and methods for three-dimensional lithography and nano-indentation
    8.
    发明申请
    Systems and methods for three-dimensional lithography and nano-indentation 审中-公开
    三维光刻和纳米压痕的系统和方法

    公开(公告)号：US20050257709A1

    公开(公告)日：2005-11-24

    申请号：US10699287

    申请日：2003-10-31

    Applicant: Tony Mule ,  Paul Kohl ,  Muhannad Bakir ,  Kevin Martin ,  James Meindl ,  Hiren Thacker

    Inventor： Tony Mule ,  Paul Kohl ,  Muhannad Bakir ,  Kevin Martin ,  James Meindl ,  Hiren Thacker

    IPC: B41F1/00 ,  B81C1/00 ,  G03F7/00

    CPC classification number: G03F7/00 ,  B81B2201/042 ,  B81B2201/047 ,  B81B2201/058 ,  B81B2203/0384 ,  B81C1/00119 ,  B81C2201/0108 ,  B81C2201/0152 ,  B81C2201/0159 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0015

    Abstract: Systems and methods for three dimensional lithography, nano-indentation, and combinations thereof are disclosed. One exemplary three dimensional lithography method, among others, includes: providing a substrate having at least one optical element, wherein the optical element is selected from a refractive element and a diffractive element; disposing a polymer layer on the substrate and the at least one optical element, wherein the polymer layer includes a polymer material selected from a positive-tone polymer material and a negative-tone polymer material; positioning a mask adjacent the polymer layer, wherein the mask does not cover at least one directly exposed portion of the polymer material directly overlaying the at least one element; and exposing the at least one directly exposed portion of the polymer material to optical energy, wherein the optical energy passes through the at least one directly exposed portion of the polymer material and interacts with the element, and the element redirects the optical energy through the polymer material forming at least one area of indirectly exposed polymer material.

    Abstract translation: 公开了用于三维光刻，纳米压痕及其组合的系统和方法。 一种示例性的三维光刻方法，其中包括：提供具有至少一个光学元件的衬底，其中所述光学元件选自折射元件和衍射元件; 在所述基板和所述至少一个光学元件上设置聚合物层，其中所述聚合物层包括选自正性聚合物材料和负性聚合物材料的聚合物材料; 将掩模定位在所述聚合物层附近，其中所述掩模不覆盖直接覆盖所述至少一个元件的聚合物材料的至少一个直接暴露部分; 并且将所述聚合物材料的至少一个直接暴露部分暴露于光能，其中所述光能通过所述聚合物材料的所述至少一个直接暴露部分并且与所述元件相互作用，并且所述元件将所述光能重定向通过所述聚合物 形成间接暴露的聚合物材料的至少一个区域的材料。

    METHOD OF FORMING FINE PATTERN
    10.
    发明申请
    METHOD OF FORMING FINE PATTERN 审中-公开
    形成精细图案的方法

    公开(公告)号：US20090039563A1

    公开(公告)日：2009-02-12

    申请号：US12065246

    申请日：2006-08-25

    Applicant: Motoki Okinaka ,  Kazuhito Tsukagoshi ,  Yoshinobu Aoyagi

    Inventor： Motoki Okinaka ,  Kazuhito Tsukagoshi ,  Yoshinobu Aoyagi

    IPC: B29C59/16

    CPC classification number: G03F7/0002 ,  B81C1/00031 ,  B81C1/00111 ,  B81C2201/0152 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/31 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76817

    Abstract: A method of fine-pattern formation in which in forming a pattern, a fine pattern formed in a mold can be transferred to a pattering material in a short time at a low temperature and low pressure and, after the transfer of the fine pattern to the patterning material, the fine pattern formed in the patterning material does not readily deform. The method for fine-pattern formation comprises: a first step in which a mold having a fine structure with recesses/protrusions is pressed against a pattering material comprising a polysilane; a second step in which the patterning material is irradiated with ultraviolet to photooxidize the patterning material; a third in which the pressing of the mold against the patterning material is relieved and the mold is drawn from the pattering material; and a fourth step in which that surface of the patterning material to which the fine pattern has been transferred is irradiated with an oxygen plasma to oxidize the surface.

    Abstract translation: 精细图案形成方法在形成图案时，在模具中形成的精细图案可以在低温低压下在短时间内转印到图案材料，并且在精细图案转印到 图案形成材料中形成的微细图案不容易变形。 精细图案形成方法包括：第一步骤，其中具有凹陷/突起的精细结构的模具被压在包含聚硅烷的图案材料上; 第二步骤，其中图案形成材料被紫外线照射以对图案材料进行光氧化; 第三，其中将模具压靠在图案形成材料上被释放并且模具从图案材料中拉出; 以及第四步骤，其中已经转印有精细图案的图案形成材料的表面用氧等离子体照射以氧化该表面。

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