公开(公告)号：JP2013243159A

公开(公告)日：2013-12-05

申请号：JP2013164384

申请日：2013-08-07

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ, インコーポレイテッド

Inventor： BO VANDERBERG ,  VICTOR BENEVISTE ,  JOHN FALLON ,  IIYA POKIDOV

IPC: H01J27/08 ,  H01J37/08

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/304 ,  H01J37/32467 ,  H01J2237/002 ,  H01J2237/082 ,  H01J2237/31701

Abstract: PROBLEM TO BE SOLVED: To provide an ion source with improved temperature control which allows an arc chamber housing to be made of an inexpensive and light aluminum alloy and allows a wider range of the operating range of source power.SOLUTION: An ion source comprises an arc chamber housing 76 made of an aluminum alloy, and a source block 120. The operating temperature of the arc chamber housing is kept within the range from 400°C to 550°C inclusive. For this purpose, heat conduction between the source block and the arc chamber housing is promoted by use of gaskets 260, 262 of low thermal resistance material, and the arc chamber housing is provided with resistance heater elements and a temperature sensor to control temperature.

Abstract translation: 要解决的问题：提供具有改进的温度控制的离子源，其允许电弧室壳体由廉价且轻质的铝合金制成，并且允许更大范围的源功率的工作范围。解决方案：离子源包括 由铝合金制成的电弧室壳体76和源极块120.电弧室壳体的工作温度保持在400℃至550℃的范围内。 为此，通过使用低热阻材料的垫片260,262来促进源极块和电弧室壳体之间的热传导，并且电弧室壳体设置有电阻加热器元件和用于控制温度的温度传感器。

公开(公告)号：JP2010080446A

公开(公告)日：2010-04-08

申请号：JP2009217110

申请日：2009-09-18

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： SATOH SHU ,  ADAMIK JOHN ,  SIERADZKI MANNY

IPC: H01J27/02 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/023 ,  H01J37/04 ,  H01J37/067 ,  H01J37/15 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/0213 ,  H01J2237/0458 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/31701

Abstract: PROBLEM TO BE SOLVED: To provide an extraction electrode manipulator having reduced maintenance frequencies and reduced troubles.
SOLUTION: The extraction electrode manipulator system includes a suppression electrode 210 supported by an inside support tube 248 of a support tube system coaxially arranged, a ground electrode 212 supported by an outside support tube 246 of the support tube system coaxially arranged, and a high voltage insulator ring 211 located at the distant end of the support tube system coaxially arranged to mechanically support the support tube system and serve as a high voltage vacuum feedthrough. As a result, the high voltage insulator ring 211 as an insulating stand-off is located at the distant end of the support tube system coaxially arranged near an ion source to mechanically support the inside support tube and serve as a high voltage vacuum feedthrough, thus reducing the possibility that vapor reaches the insulating surface of the insulator ring 211 to contaminate and cover it.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供具有降低的维护频率和减少的麻烦的引出电极操纵器。 解决方案：提取电极操纵器系统包括由同轴布置的支撑管系统的内部支撑管248支撑的抑制电极210，由同轴布置的支撑管系统的外部支撑管246支撑的接地电极212，以及 位于支撑管系统的远端的高压绝缘体环211，其同轴地布置成机械地支撑支撑管系统并用作高压真空馈通。 结果，作为绝缘支架的高电压绝缘体环211位于同轴配置在离子源附近的支撑管系的远端，以机械地支撑内部支撑管并用作高压真空馈通，因此 降低蒸气到达绝缘体环211的绝缘表面以污染并覆盖绝缘体环211的可能性。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009038031A

公开(公告)日：2009-02-19

申请号：JP2008198062

申请日：2008-07-31

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： SIERADZKI MANNY ,  SPLINTER PATRICK ,  BO VANDERBERG

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/20228 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/31706

Abstract: PROBLEM TO BE SOLVED: To provide an implantation system for implanting ions into a workpiece in a plurality of operation ranges, and to provide an implantation method. SOLUTION: A required dose amount of ions is provided and a spot ion beam 112 is formed from an ion source 108 and undergoes a mass spectrometry by a mass spectrograph 126. The ions are implanted into the workpiece either in a first mode or a second mode base on the required dose amount. An ion beam is scanned by a beam scanning system 128 arranged in a downstream of the mass spectrograph 126 and is parallelized by a parallelizer 130 arranged in a downstream of the beam scanning system 128. In the first mode, the workpiece 122 is scanned through the scanning ion beam at least in one dimension by a workpiece scanning system 167. In the second mode, the ion beam passes without scanning the beam scanning system 128 and the parallelizer 130 and the workpiece 122 is scanned through the spot ion beam 112 in two dimensions. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在多个操作范围内将离子注入工件的植入系统，并提供一种植入方法。 解决方案：提供所需剂量的离子，并且从离子源108形成点离子束112，并通过质谱仪126进行质谱分析。将离子以第一模式或 基于所需剂量的第二模式。 离子束被布置在质谱仪126下游的光束扫描系统128扫描，并且通过布置在光束扫描系统128的下游的并联器130并行化。在第一模式中，工件122通过 通过工件扫描系统167至少在一个维度上扫描离子束。在第二模式中，离子束通过而不扫描光束扫描系统128并且平行化器130和工件122通过点离子束112二维扫描 。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007095693A

公开(公告)日：2007-04-12

申请号：JP2006263108

申请日：2006-09-27

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： JOHN D POLLOCK ,  BERRIAN DONALD W ,  JOHN VANDERPOT

IPC: H01J37/04 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/30477 ,  H01J2237/31703

Abstract: PROBLEM TO BE SOLVED: To provide a system, a method, and a device for determining an ion beam profile.
SOLUTION: The system includes a measuring apparatus 140 placed along the path way of the ion beam 110, a driving mechanism 175, and a first plate 165 rotatably connected to the driving mechanism 175. The driving mechanism 175 is operable for rotating the first plate around a first axis in the ion beam path way, and selectively prevents the ion beam arriving to the measuring device. The device includes a second plate 193 rotatably connected to the driving mechanism. The driving mechanism is operable for rotating the second plate around the first axis in the ion beam independent from the rotation of the first plate. The driving mechanism selectively prevents the ion beam arriving to the device. The first plate and/or the second plate are/is possible to be moved parallel on a straight line in the ion beam.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于确定离子束分布的系统，方法和装置。 解决方案：该系统包括沿着离子束110的路径放置的测量装置140，驱动机构175和可旋转地连接到驱动机构175的第一板165.驱动机构175可操作以使 第一板以离子束路径方式围绕第一轴线，并且选择性地防止离子束到达测量装置。 该装置包括可旋转地连接到驱动机构的第二板193。 驱动机构可操作以独立于第一板的旋转而使第二板围绕离子束中的第一轴线旋转。 驱动机构选择性地防止离子束到达装置。 第一板和/或第二板可以在离子束中的直线上平行移动。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005503672A

公开(公告)日：2005-02-03

申请号：JP2003529516

申请日：2002-08-16

Applicant: アクセリス テクノロジーズ, インコーポレイテッドAxcelis Technologies, Inc. ,  ダウ・コーニング・コーポレイション

Inventor： ラルフ アルバノ、 ,  オーランド エスコーシア、 ,  ニック スブロッキー、 ,  フィル デムボウスキー、 ,  コリー バージロン、 ,  クィンヤン ハン、 ,  ジェフ ブレマー、 ,  アイヴァン エル．、 ザ サード ベリー、 ,  カルロ ワルドフリード、

IPC: C08J9/36 ,  C01B33/12 ,  C23C16/56 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316

CPC classification number: C01B33/126 ,  C23C16/56 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/249953 ,  Y10T428/31663

Abstract: 弾性率と膜硬度が向上した低誘電率多孔質材料。 このような多孔質材料の製造方法は、多孔質誘電性材料を用意すること、およびこの多孔質誘電性材料をプラズマ硬化してプラズマ硬化多孔質誘電性材料を生成させることを含む。 多孔質誘電性材料のプラズマ硬化により、弾性率と硬度は向上するが、誘電率はより大きい材料となる。 弾性率の向上は、典型的には１００％以上であり、より典型的には約２００％以上である。 膜硬度の向上は、典型的には約５０％以上である。 多孔質誘電性材料は、約３５０℃より低い温度で、約１５と約１２０秒の間の時間、プラズマ硬化される。 任意選択で、プラズマ硬化された多孔質誘電性材料を、後プラズマ処理することができる。 プラズマ硬化多孔質誘電性材料の後プラズマ処理により、プラズマ硬化多孔質誘電性材料との比較で、向上した弾性率と膜硬度は保たれたままで、材料の誘電率は低下する。 この後プラズマ処理されたプラズマ硬化多孔質誘電性材料の誘電率は、約１．１と約３．５の間であり、弾性率と膜硬度は向上している。

公开(公告)号：JP2009152402A

公开(公告)日：2009-07-09

申请号：JP2007329171

申请日：2007-12-20

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： WALDFRIED CARLO ,  HAN QINGYUAN ,  ESCORCIA ORLANDO ,  BERRY IVAN

IPC: H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To form a porous low-k dielectric to be used in a semiconductor device.
SOLUTION: Processes for forming porous low-k dielectric materials from low-k dielectric films containing a porogen material include exposing the low-k dielectric film to ultraviolet radiation. The film is exposed to broadband ultraviolet radiation of less than 240 nm. In other embodiments, the low-k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix. At the same time, the low-k dielectric film maintains a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low-k dielectric film can be then processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low-k dielectrics film and form a porous low-k dielectric film.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：形成用于半导体器件的多孔低k电介质。 解决方案：从含有致孔剂材料的低k电介质膜形成多孔低k介电材料的工艺包括将低k电介质膜暴露于紫外线辐射。 该膜暴露于小于240nm的宽带紫外线辐射。 在其他实施方案中，低k电介质膜暴露于有效增加膜基质的交联密度的第一紫外线辐射图。 同时，低k电介质膜在暴露于第一紫外线图案之前和之后保持致孔剂材料的浓度基本相同。 然后可以处理低k电介质膜以在其中形成金属互连结构，随后暴露于有效从低k电介质膜去除致孔剂材料并形成多孔低k电介质膜的第二紫外线图案。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008047536A

公开(公告)日：2008-02-28

申请号：JP2007212769

申请日：2007-08-17

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： TEN CHAO TAO ,  PHILIP J RING

IPC: H01J37/317 ,  H01J37/18

CPC classification number: H01J37/3171 ,  H01J2237/002 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/16 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01L21/265 ,  H01L21/67213

Abstract: PROBLEM TO BE SOLVED: To lengthen a maintenance period by decreasing deposition of spattering by ion bombardment at implantation. SOLUTION: A cooling trap 200 contains materials which adsorb depositing materials such as texture or non-texture aluminum, graphite, porous aluminum, silicon carbide or silicon carbide foam. The cooling trap 200 is placed under a Faraday flag assembly 100'. An open cup 212 comprises high temperature of an upper region 213, and comparatively low temperature of lower region 214. Further, the cup is cooled by a closed loop cooling system 210 which uses coolant. The surface of an open cup 220 has notches, and interlayer exfoliation of a film spatter 211 or deposition on other surface in the ion implantation chamber 22 is decreased by collecting a thin film on the trap surface 220. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：通过在植入时通过离子轰击减少溅射而延长维持期。 解决方案：冷却捕集器200包含吸附沉积材料如材质或非质感铝，石墨，多孔铝，碳化硅或碳化硅泡沫的材料。 冷却捕集器200放置在法拉第旗组件100'下方。 开口杯212包括上部区域213的高温和下部区域214的相对低的温度。此外，杯子由使用冷却剂的闭环冷却系统210冷却。 打开杯220的表面具有凹口，并且通过在捕获表面220上收集薄膜来减小膜溅射物211的层间剥离或离子注入室22中的其它表面上的沉积。（C） 2008年，日本特许厅和INPIT

公开(公告)号：JP2005233965A

公开(公告)日：2005-09-02

申请号：JP2005043960

申请日：2005-02-21

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： PINGREE RICHARD ,  SAKTHIVEL PALANIKUMARA ,  VANODIA MUHESH ,  COLSON MICHAEL

IPC: G01N22/00 ,  B01J19/08 ,  G01N27/00 ,  G01N27/02 ,  H01L21/3065

CPC classification number: G01N27/023

Abstract: PROBLEM TO BE SOLVED: To provide a method and a system for detecting a solid material existing in a target medium.
SOLUTION: This method for detecting the solid substance in the target medium has a process for receiving emission gas on the downstream side of a workpiece from which a photoresist material is removed, a process for arranging the target medium inside the electromagnetic circuit and exciting it by means of electromagnetic energy, and a process for deciding an impedance value so that the impedance value of the electromagnetic circuit complies with an amount of the solid material inside the target medium. This system includes a microwave source 102, an impedance measurement device 112, a wave guide tube 104, and a resonator cavity 106, which is constructed to receive the target medium 108 (for example, emission gas for ashing photoresist) in it.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供用于检测存在于目标介质中的固体材料的方法和系统。 解决方案：用于检测目标介质中的固体物质的方法具有在去除光致抗蚀剂材料的工件的下游侧接收排放气体的处理，在电磁线圈内布置目标介质的处理和 通过电磁能激发它，以及用于确定阻抗值的过程，使得电磁电路的阻抗值符合目标介质内的固体材料的量。 该系统包括微波源102，阻抗测量装置112，波导管104和谐振器腔106，其被构造成接收其中的目标介质108（例如，用于灰化光致抗蚀剂的发射气体）。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005229117A

公开(公告)日：2005-08-25

申请号：JP2005033644

申请日：2005-02-09

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： JANOS ALAN ,  MONTIEN SAUBHAYANA

IPC: G01B11/06 ,  H01L21/3065

CPC classification number: G01B11/0675 ,  G03F7/427 ,  H01J37/32935 ,  H01L22/26

Abstract: PROBLEM TO BE SOLVED: To provide constructive thickness measuring device and method by an in-situ process for determining the thickness of a thin film, an ashing speed and an end point. SOLUTION: There is included a room having a primary visual field port 126 and a secondary visual field port 127. The primary visual field port 126 includes light receiving means 116 in the shape of receiving a light at a shallow angle from the front surface of a substrate to be treated. The secondary visual field port 127 includes a broad band lighting luminous source, and is preferably arranged at a side wall facing to the light receiving means 116. This treatment comprises a step of calculating the thickness of the thin film, the ashing speed and the end point from an interference pattern. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：通过用于确定薄膜厚度，灰化速度和终点的原位工艺来提供结构化的厚度测量装置和方法。

解决方案：包括具有主视野端口126和次视场端口127的房间。主视野端口126包括受光装置116，其形式为从前方接收浅角度的光 待处理基材的表面。 第二视野端口127包括宽带照明光源，并且优选地布置在面向光接收装置116的侧壁处。该处理包括计算薄膜的厚度，灰化速度和结束的步骤 指出了干扰模式。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2009152373A

公开(公告)日：2009-07-09

申请号：JP2007328830

申请日：2007-12-20

Applicant: Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

Inventor： WALDFRIED CARLO ,  ESCORCIA ORLANDO ,  BEYER GERALD ,  LACOPI FRANCESCA

IPC: H01L21/312 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a low k dielectric material that can improve mechanical property without putting any bad influence on heating costs.
SOLUTION: Processes for forming the low k dielectric material onto a surface of a substrate include: depositing the low k dielectric material onto the surface; and exposing the low k dielectric material to ultraviolet radiation for a period of time and intensity effective to increase a mechanical property of the low k dielectric material, wherein the mechanical property is significantly improved compared to a corresponding mechanical property of the low k dielectric material free from exposure to the ultraviolet radiation, or the corresponding mechanical property of the low k dielectric material that is cured in a furnace, or the corresponding mechanical property of the low k dielectric material that is exposed to excessive activating energy prior to ultraviolet radiation exposure, wherein excessive activating energy includes an excessive hotplate bake sequence, a furnace cure, an annealing cure, a multi-temperature cure process or plasma treatment prior to the ultraviolet radiation.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种形成低k电介质材料的方法，其可以改善机械性能，而不会对加热成本造成任何不良影响。 解决方案：将低k电介质材料形成在衬底的表面上的工艺包括：将低k电介质材料沉积到表面上; 并且将低k电介质材料暴露于紫外线辐射一段时间和强度以有效地增加低k介电材料的机械性能，其中与低k电介质材料的相应机械性能相比，机械性能显着提高 暴露于紫外线辐射，或在炉中固化的低k介电材料的相应机械性能，或在紫外线照射之前暴露于过度活化能的低k电介质材料的相应机械性能，其中 在紫外线辐射之前，过度的活化能量包括过量的热板烘烤顺序，炉固化，退火固化，多温固化工艺或等离子体处理。 版权所有（C）2009，JPO＆INPIT