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公开(公告)号：KR1020130110959A
公开(公告)日：2013-10-10
申请号：KR1020120033341
申请日：2012-03-30
Applicant: 삼성전자주식회사
IPC: H01L23/488
CPC classification number: H01L24/14 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/03452 , H01L2224/0401 , H01L2224/05022 , H01L2224/05099 , H01L2224/05568 , H01L2224/05599 , H01L2224/06102 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13012 , H01L2224/13014 , H01L2224/13018 , H01L2224/1308 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/13171 , H01L2224/17517 , H01L2924/00014 , H01L2924/01327 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01006 , H01L2224/05552
Abstract: PURPOSE: A semiconductor package prevents defects generated in a reflow process by omitting the reflow process in manufacturing processes. CONSTITUTION: Multiple contact pads (115) are formed on one surface of a semiconductor chip (100). Multiple main bumps (140a) are formed on the contact pads. The main pump includes a first pillar layer (142a) formed on the contact pad and a first solder layer (146a) formed on the first pillar layer. The lower sidewall of the first solder layer is substantially vertical. The upper part of the first solder layer is round. Multiple dummy bumps (140b) are formed on the semiconductor chip around the contact pads.
Abstract translation: 目的：半导体封装通过在制造工艺中省略回流工艺来防止在回流工艺中产生的缺陷。 构成：在半导体芯片（100）的一个表面上形成多个接触焊盘（115）。 多个主凸块（140a）形成在接触垫上。 主泵包括形成在接触焊盘上的第一柱层（142a）和形成在第一柱层上的第一焊料层（146a）。 第一焊料层的下侧壁基本上是垂直的。 第一焊料层的上部是圆形的。 在接触焊盘周围的半导体芯片上形成多个虚设凸块（140b）。
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公开(公告)号：KR1020080037235A
公开(公告)日：2008-04-30
申请号：KR1020060104032
申请日：2006-10-25
Applicant: 삼성전자주식회사
CPC classification number: H04N21/41407 , H04N21/4394 , H04N21/4398
Abstract: A method and an apparatus for processing audio of a portable terminal with a T(Terrestrial)-DMB(Digital Multimedia Broadcasting) function are provided to watch the T-DMB at any place irrespective of the audio standard of DMB. When a T-DMB signal is received, a process for sensing the channel frequency of the T-DMB signal and then confirming the service area of the channel frequency is performed(S303). Thereafter, a process for setting the audio codec of the service area into the audio codec of the T-DMB is performed(S304). When the T-DMB is outputted, a process for decoding and outputting the audio signal of the T-DMB signal through the set audio codec is performed(S305). Thereafter, a process for encoding the user's sound inputted by a portable terminal through the set audio codec is performed(S306). When the sensed channel frequency is 174.928 Mhz, a control member discriminates that the service area of the T-DMB is China and Europe, not Korea.
Abstract translation: 提供用于处理具有T（地面）-DMB（数字多媒体广播）功能的便携式终端的音频的方法和装置，用于在任何地方观看T-DMB，而与DMB的音频标准无关。 当接收到T-DMB信号时，执行用于感测T-DMB信号的信道频率，然后确认信道频率的服务区域的处理（S303）。 此后，执行将服务区域的音频编解码器设置为T-DMB的音频编解码器的处理（S304）。 当输出T-DMB时，执行用于通过设定的音频编解码器解码和输出T-DMB信号的音频信号的处理（S305）。 此后，执行用于通过设置的音频编解码器对由便携式终端输入的用户声音进行编码的处理（S306）。 当感测到的信道频率为174.928Mhz时，控制构件判断T-DMB的服务区域是中国和欧洲，而不是韩国。
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公开(公告)号：KR100725460B1
公开(公告)日：2007-06-07
申请号：KR1020050131420
申请日：2005-12-28
Applicant: 삼성전자주식회사
IPC: G01N1/36
Abstract: A method of manufacturing a standard specimen for metal contamination analysis is provided to manufacture the standard specimen existing in a certain depth and uniformly distributed in a semiconductor wafer. A method of manufacturing a standard specimen for metal contamination analysis includes a step of applying an organic silica solution(14a) including metal impurities(12) on a semiconductor wafer(10). The metal impurities are intentionally contained in the organic silica solution to analyze a metal contamination source. Concentration of the metal impurities can be adjusted by an operator. The metal impurities include iron, nickel, and so on. Before applying the organic silica solution on the semiconductor wafer, a natural oxide layer remaining on the semiconductor wafer can be removed. The semiconductor wafer is submerged in a first solution including ammonia, peroxide, and so on. Then, the semiconductor wafer is submerged in a second solution including fluoride.
Abstract translation: 提供一种制造用于金属污染物分析的标准样本的方法，以制造存在于一定深度并均匀分布在半导体晶片中的标准样本。 制造用于金属污染物分析的标准样品的方法包括在半导体晶片（10）上涂覆包含金属杂质（12）的有机二氧化硅溶液（14a）的步骤。 金属杂质有意地包含在有机二氧化硅溶液中以分析金属污染源。 操作人员可以调整金属杂质的浓度。 金属杂质包括铁，镍等。 在将有机二氧化硅溶液涂覆在半导体晶片上之前，可以去除残留在半导体晶片上的自然氧化层。 将半导体晶片浸没在包含氨，过氧化物等的第一溶液中。 然后，将半导体晶片浸没在包含氟化物的第二溶液中。
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公开(公告)号：KR1020050087079A
公开(公告)日：2005-08-31
申请号：KR1020040012287
申请日：2004-02-24
Applicant: 삼성전자주식회사
IPC: H04L29/06
CPC classification number: G06F13/1694 , G06F13/1605 , G06F13/1684
Abstract: 프로토콜 변환중재회로 및 이를 구비하는 시스템과 신호 변환중재방법이 개시된다. 상기 프로토콜 변환중재회로는 마스터가 사용하는 프로토콜에 따른 신호들을 수신하고, 수신된 신호들을 슬레이브의 시스템 버스가 사용하는 프로토콜에 따른 신호로 변환하는 프로토콜 변환회로; 및 상기 프로토콜 변환회로의 출력신호들을 수신하고, 수신된 신호들을 상기 슬레이브가 사용하는 프로토콜에 따른 신호들로 변환하기 위한 변환회로를 구비한다. 다중포트 메모리 컨트롤러와 본 발명에 따른 적어도 하나의 프로토콜 변환중재회로를 구비하는 시스템은 다수개의 모듈들 각각이 시스템 버스를 통하지 않고 직접적으로 상기 다중포트 메모리 컨트롤러를 통하여 외부 메모리와 데이터를 주고받을 수 있으므로, 데이터 프로세싱 시간이 상당히 감소되는 효과가 있다.
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公开(公告)号：KR1020040014835A
公开(公告)日：2004-02-18
申请号：KR1020020047581
申请日：2002-08-12
Applicant: 삼성전자주식회사
IPC: G10L15/28
Abstract: PURPOSE: A voice-recognition device is provided to improve voice recognition speed by installing dedicated calculator having a self-processing function to process loads which requires system usage rate. CONSTITUTION: A codec module(440) samples an inputted aural signal and makes sample data as block by predetermined time and output it. A register file module(404) buffers the blocks of sample data belong to an effective voice section among the blocks of sample data. An FFT(Fast Fourier Transform) module(412) transforms the data blocks into a frequency domain, or executes an inverse operation, and stores the result at the register file module. An MAC(Multiply And Accumulate) module(408) compares feature values extracted based on a frequency spectrum obtained by the FFT with feature values of each word syllable preliminarily selected, so the MAC module calculates the observation probability.
Abstract translation: 目的：提供语音识别设备，通过安装具有自我处理功能的专用计算器来处理需要系统使用率的负载来提高语音识别速度。 构成：编解码器模块（440）对输入的听觉信号进行采样，并将样本数据按预定时间块进行输出。 寄存器文件模块（404）在样本数据块中缓存属于有效语音段的样本数据块。 FFT（快速傅立叶变换）模块（412）将数据块变换成频域，或执行逆运算，并将结果存储在寄存器文件模块中。 MAC（乘法和累加）模块（408）将基于FFT获得的频谱提取的特征值与预先选择的每个单词音节的特征值相比较，从而MAC模块计算观测概率。
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Patent Agency Ranking
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公开(公告)号：KR1020150039299A
公开(公告)日：2015-04-10
申请号：KR1020130117682
申请日：2013-10-02
Applicant: 삼성전자주식회사
IPC: G06T1/20
CPC classification number: G06T1/20 , G06F1/3206 , G06T3/40
Abstract: 설정가능한이미지처리파이프라인을포함하는시스템온 칩은버스와, 상기버스에접속되고상응하는이미지데이터를처리하는제1이미지처리모듈과, 제1제어신호들에응답하여, 제1이미지데이터와상기버스로부터출력된제2이미지데이터중에서어느하나를제1바이패스경로를통해상기버스와상기제1이미지처리모듈중에서적어도하나로전송하는제1이미지처리스테이지와, 제2제어신호들에응답하여, 상기제1이미지처리모듈로부터출력된제3이미지데이터와상기버스로부터출력된제4이미지데이터중에서어느하나를제2바이패스경로와제2스케일러경로중에서어느하나를통해상기버스로전송하는제2이미지처리스테이지를포함한다.
Abstract translation: 一种包括可配置图像处理流水线的片上系统，包括：处理总线的第一图像处理模块和连接并对应于总线的图像数据; 第一图像处理级，响应于第一控制信号，通过第一旁路路径将从总线输出的第一图像数据和第二图像数据中的任何一个发送到总线和第一图像处理模块中的任何一个; 以及第二图像处理级，响应于第二图像处理级，将第一图像处理模块输出的第三图像数据中的任何一个和从总线输出的第四图像数据通过第二旁路路径和第二缩放路径中的任一个发送到总线 第二控制信号。
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公开(公告)号：KR1020140007659A
公开(公告)日：2014-01-20
申请号：KR1020120075039
申请日：2012-07-10
Applicant: 삼성전자주식회사
IPC: H01L23/48
CPC classification number: H01L23/5226 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L21/76879 , H01L23/3114 , H01L23/49816 , H01L23/5389 , H01L24/13 , H01L24/24 , H01L24/73 , H01L24/82 , H01L24/92 , H01L24/96 , H01L25/0657 , H01L25/50 , H01L2221/68381 , H01L2224/02379 , H01L2224/0401 , H01L2224/04105 , H01L2224/05548 , H01L2224/05567 , H01L2224/11462 , H01L2224/12105 , H01L2224/13022 , H01L2224/13024 , H01L2224/13082 , H01L2224/16225 , H01L2224/19 , H01L2224/24011 , H01L2224/24051 , H01L2224/24147 , H01L2224/32145 , H01L2224/73209 , H01L2224/73267 , H01L2224/82005 , H01L2224/821 , H01L2224/82106 , H01L2224/83005 , H01L2224/92244 , H01L2224/96 , H01L2224/97 , H01L2225/06517 , H01L2225/06524 , H01L2225/06565 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/18162 , H01L2224/82 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
Abstract: A multi-chip package according to the present invention comprises a first semiconductor chip, a second semiconductor chip, an insulating film structure, and a plug structure. The first semiconductor chip includes first bonding pads. The second semiconductor chip is located on the first semiconductor chip and includes second bonding pads. The insulating film structure covers the first and second semiconductor chips. The plug structure, which is located inside the insulating film structure and placed apart from sides of the first and second semiconductor chips, is formed by using a plating process and connects the first bonding pad and second bonding pad electrically. Therefore, problems caused by a micro-bump forming process can be completely resolved.
Abstract translation: 根据本发明的多芯片封装包括第一半导体芯片，第二半导体芯片，绝缘膜结构和插头结构。 第一半导体芯片包括第一接合焊盘。 第二半导体芯片位于第一半导体芯片上并且包括第二接合焊盘。 绝缘膜结构覆盖第一和第二半导体芯片。 通过使用电镀工艺形成位于绝缘膜结构内并且与第一和第二半导体芯片的侧面隔开的插塞结构，并且电连接第一焊盘和第二焊盘。 因此，能够完全解决由微凸块形成工序引起的问题。
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公开(公告)号：KR1020120035721A
公开(公告)日：2012-04-16
申请号：KR1020100097418
申请日：2010-10-06
Applicant: 삼성전자주식회사
IPC: H01L23/00 , H01L23/498 , H01L23/31 , H01L25/065
CPC classification number: H01L23/49833 , H01L23/3128 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/06155 , H01L2224/06156 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1147 , H01L2224/13005 , H01L2224/13012 , H01L2224/13016 , H01L2224/13082 , H01L2224/13109 , H01L2224/13118 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/13171 , H01L2224/13193 , H01L2224/14051 , H01L2224/16145 , H01L2224/16225 , H01L2224/17517 , H01L2224/32145 , H01L2224/32225 , H01L2224/48225 , H01L2224/48227 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/01052 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L21/64 , H01L21/67 , H01L23/48 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: PURPOSE: A semiconductor package and a semiconductor package module are provided to arrange a bump with a fine pitch by preventing bridge generation, thereby reducing the size of the semiconductor package. CONSTITUTION: Connection bumps(140a) are formed on each connection pad. The connection bumps include a first pillar part(142a) and a first solder part(144a). Support bumps(140b) are formed on a position near the connection pad with a height higher than the upper surface of the connection pad. The support bumps comprises a second pillar part(142b) and a second solder part(144b). A solder induction part is formed on the second pillar part.
Abstract translation: 目的：提供半导体封装和半导体封装模块以通过防止桥形成而布置具有细间距的凸块，从而减小半导体封装的尺寸。 构成：连接凸块（140a）形成在每个连接垫上。 连接凸块包括第一支柱部分（142a）和第一焊接部分（144a）。 支撑凸块（140b）形成在连接垫附近的位置处，高度高于连接垫的上表面。 支撑凸块包括第二柱部分（142b）和第二焊接部分（144b）。 焊料感应部形成在第二支柱部上。
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公开(公告)号：KR100604835B1
公开(公告)日：2006-07-26
申请号：KR1020040012287
申请日：2004-02-24
Applicant: 삼성전자주식회사
IPC: H04L29/06
CPC classification number: G06F13/1694 , G06F13/1605 , G06F13/1684
Abstract: 프로토콜 변환중재회로 및 이를 구비하는 시스템과 신호 변환중재방법이 개시된다. 상기 프로토콜 변환중재회로는 마스터가 사용하는 프로토콜에 따른 신호들을 수신하고, 수신된 신호들을 슬레이브의 시스템 버스가 사용하는 프로토콜에 따른 신호로 변환하는 프로토콜 변환회로; 및 상기 프로토콜 변환회로의 출력신호들을 수신하고, 수신된 신호들을 상기 슬레이브가 사용하는 프로토콜에 따른 신호들로 변환하기 위한 변환회로를 구비한다. 다중포트 메모리 컨트롤러와 본 발명에 따른 적어도 하나의 프로토콜 변환중재회로를 구비하는 시스템은 다수개의 모듈들 각각이 시스템 버스를 통하지 않고 직접적으로 상기 다중포트 메모리 컨트롤러를 통하여 외부 메모리와 데이터를 주고받을 수 있으므로, 데이터 프로세싱 시간이 상당히 감소되는 효과가 있다.
프로토콜, AMBA, OCP
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