公开(公告)号：KR100462791B1

公开(公告)日：2004-12-20

申请号：KR1020010075409

申请日：2001-11-30

Applicant: 한국과학기술연구원

Inventor： 임상호 ,  박영준 ,  한석희 ,  이우영 ,  신경호 ,  김경숙

IPC: G11C11/15

Abstract: PURPOSE: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor is provided to supply a magnetic layer mainly constituted of Co serving as a magnetic field keeper and having an excellent characteristics as a barrier layer. CONSTITUTION: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor includes the steps of: forming an insulating layer(102) on a semiconductor substrate(100), forming a trench in the insulating layer(102) at a predetermined depth by using photolithography method, coating a magnetic keeper layer(106) on the inner and exterior surface of the trench by using a physical vapor deposition method, depositing seed layer made of copper(Cu) on the entire surface of the magnetic keeper layer(106), depositing a conducting layer(110) made of Cu at a predetermined thickness so as to cover the trench(104) formed on the top of the seed layer by using an electroplating method and planarizing the conducting layer(110) by using a chemical mechanical polishing(CMP) method until the top surface of the insulating layer is exposed.

Abstract translation: 目的：提供一种用于制造具有能够应用于磁存储器和传感器的保持层的字线的方法，以提供主要由作为磁场保持器的Co构成并具有优异特性的磁层作为阻挡层。 用于制造具有能够施加到磁存储器和传感器的保持层的字线的方法包括以下步骤：在半导体衬底（100）上形成绝缘层（102）;在绝缘层（100）中形成沟槽 使用光刻法，在沟槽的内外表面上涂布磁性保持层（106），在其整个表面上沉积由铜（Cu）制成的晶种层 磁性保持层（106），以预定厚度沉积由Cu制成的导电层（110），以便通过使用电镀方法覆盖形成在晶种层顶部上的沟槽（104），并平坦化导电层 110）通过使用化学机械抛光（CMP）方法直到绝缘层的顶表面暴露。

公开(公告)号：KR100452618B1

公开(公告)日：2004-10-15

申请号：KR1020010072201

申请日：2001-11-20

Applicant: 한국과학기술연구원

Inventor： 임상호 ,  박영준 ,  한석희 ,  이우영 ,  신경호 ,  김경숙

IPC: G11C11/15

Abstract: PURPOSE: A magnetic memory and word line making method capable of being applied to sensor are provided to realize a pattern with respect to a wordline/bitline to maximize magnetic field required for converting magnetization. CONSTITUTION: An insulation film(102) is formed on a semiconductor substrate(100), and a trench of a predetermined depth is formed by using the insulation film. A seed film(106) is deposited on an entire surface of the trench. A conductive film(108) of a copper material is coated on the seed film so as to cover the trench sufficiently. A CMP process is performed until an upper surface of the insulation film is exposed.

Abstract translation: 目的：提供一种能够应用于传感器的磁存储器和字线制造方法，以实现相对于字线/位线的图案，以最大化转换磁化所需的磁​​场。 构成：在半导体衬底（100）上形成绝缘膜（102），通过使用绝缘膜形成预定深度的沟槽。 籽晶膜（106）沉积在沟槽的整个表面上。 在籽晶膜上涂覆铜材料的导电膜（108）以充分覆盖沟槽。 执行CMP工艺直到绝缘膜的上表面暴露。

公开(公告)号：KR100429770B1

公开(公告)日：2004-05-03

申请号：KR1020010071113

申请日：2001-11-15

Applicant: 한국과학기술연구원 ,  윤희성

Inventor： 조병원 ,  박영준 ,  이유용 ,  윤민승 ,  윤희성

IPC: C25D3/38

Abstract: PURPOSE: A copper electroplating solution for use in Damascene process is provided, which can fill micro patterned trench and via without defects. CONSTITUTION: The copper electroplating solution comprises 10 to 5000 ppm of polyethylene glycol as inhibitor, 1 to 1000 ppm of one or more of sulfur compounds selected from mercapto compound having aqueous radical of organic acid and other sulfur compounds, and 1 to 1000 ppm of Janus Green B (diethyl safranine azo dimethyl aniline) and/or coumarin as leveler, wherein the molecular weight of polyethylene glycol is greater than 3000, the mercapto compound is 3-mercapto-1-propanesulfonate; the other sulfur compounds except above mercapto compounds are selected from sodium sulfide, sodium sulfite, sodium thiosulfide, sodium hydrosulfide, benzenedisulfonate, benzenedithiol, benzenesulfinate, benzensulfonamide, benzenesulfonic acid and benzenesulfonyl chloride.

Abstract translation: 目的：提供用于镶嵌工艺的铜电镀溶液，其可以填充微图案化的沟槽和通孔而没有缺陷。 构成：电镀铜溶液含有10-5000ppm的聚乙二醇作为抑制剂，1-1000ppm的一种或多种选自具有有机酸水溶液和其它硫化合物的巯基化合物的硫化合物，以及1-1000ppm的Janus 绿B（二乙基番红花偶氮二甲基苯胺）和/或香豆素整平剂，其中聚乙二醇分子量大于3000，巯基化合物为3-巯基-1-丙磺酸盐; 除上述巯基化合物以外的其它硫化合物选自硫化钠，亚硫酸钠，硫代硫酸钠，氢硫化钠，苯二磺酸盐，苯二硫酚，苯亚磺酸盐，苯磺酰胺，苯磺酸和苯磺酰氯。

公开(公告)号：KR1020030044596A

公开(公告)日：2003-06-09

申请号：KR1020010075409

申请日：2001-11-30

Applicant: 한국과학기술연구원

Inventor： 임상호 ,  박영준 ,  한석희 ,  이우영 ,  신경호 ,  김경숙

IPC: G11C11/15

CPC classification number: H01L43/12 ,  G11C8/14

Abstract: PURPOSE: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor is provided to supply a magnetic layer mainly constituted of Co serving as a magnetic field keeper and having an excellent characteristics as a barrier layer. CONSTITUTION: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor includes the steps of: forming an insulating layer(102) on a semiconductor substrate(100), forming a trench in the insulating layer(102) at a predetermined depth by using photolithography method, coating a magnetic keeper layer(106) on the inner and exterior surface of the trench by using a physical vapor deposition method, depositing seed layer made of copper(Cu) on the entire surface of the magnetic keeper layer(106), depositing a conducting layer(110) made of Cu at a predetermined thickness so as to cover the trench(104) formed on the top of the seed layer by using an electroplating method and planarizing the conducting layer(110) by using a chemical mechanical polishing(CMP) method until the top surface of the insulating layer is exposed.

Abstract translation: 目的：提供一种具有能够施加到磁存储器和传感器的保持层的字线的制造方法，以提供主要由作为磁场保持器的Co构成的磁性层，并且具有优异的阻挡层特性。 构成：用于制造具有能够施加到磁存储器和传感器的保持层的字线的方法包括以下步骤：在半导体衬底（100）上形成绝缘层（102），在绝缘层中形成沟槽 102），通过使用光刻法在预定深度处，通过使用物理气相沉积法在沟槽的内表面和外表面上涂覆磁保持层（106），在铜的整个表面上沉积由铜（Cu）制成的种子层 磁性保持层（106），以预定厚度沉积由Cu制成的导电层（110），以便通过使用电镀方法覆盖形成在种子层顶部上的沟槽（104）并使导电层平坦化（ 110）通过使用化学机械抛光（CMP）方法直到暴露绝缘层的顶表面。

公开(公告)号：KR100032137B1

公开(公告)日：1990-03-12

申请号：KR1019870009802

申请日：1987-09-04

Applicant: 한국과학기술연구원

Inventor： 이귀로 ,  김충기 ,  박영준

IPC: H01L29/78

公开(公告)号：KR1019890005887A

公开(公告)日：1989-05-17

申请号：KR1019870009802

申请日：1987-09-04

Applicant: 한국과학기술연구원

Inventor： 이귀로 ,  김충기 ,  박영준

IPC: H01L29/78

Abstract: 내용 없음

公开(公告)号：KR100450260B1

公开(公告)日：2004-09-30

申请号：KR1020010026737

申请日：2001-05-16

Applicant: 한국과학기술연구원

Inventor： 박영준 ,  신경호 ,  이우영

IPC: H01L21/66

Abstract: PURPOSE: A method for destructive strength test of thin film are provided to measure destructive strength by electromigration phenomenon generating in a line. CONSTITUTION: A line(13) is formed of a materiel of good atomic diffusion. The anode(16) of the line is formed of a material of bad atomic diffusion. A thin film of non-conductive material is coated on the line. Applying current to the line, destruction by compressive stress on the anode is estimated by controlling current density of the line.

Abstract translation: 目的：提供一种薄膜破坏强度测试方法，用于测量线路中产生的电迁移现象造成的破坏强度。 构成：线（13）由原子扩散良好的物质构成。 线路的阳极（16）由原子扩散不好的材料形成。 生产线上涂有一层非导电材料薄膜。 对线路施加电流，通过控制线路的电流密度来估计阳极上的压缩应力造成的破坏。

公开(公告)号：KR100407907B1

公开(公告)日：2003-12-03

申请号：KR1020010026486

申请日：2001-05-15

Applicant: 한국과학기술연구원

Inventor： 신경호 ,  이우영 ,  박영준 ,  이경일 ,  하재근

IPC: G11B5/39

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F41/307 ,  H01L43/12 ,  Y10T29/49044

Abstract: A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer (15), a tunnel barrier (16) formed at an upper surface of the first magnetic layer and a second magnetic layer (17) formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds SIMILAR 10 minutes at a temperature of 200 SIMILAR 600 DEG C to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing.

Abstract translation: 一种磁隧道结的制造方法包括以下步骤：形成磁隧道结，该磁隧道结构造为具有第一磁层（15），在第一磁层的上表面形成的隧道势垒（16）和第二磁层（ 17）形成在隧道屏障的上表面处; 并在200-600℃的温度下快速热处理5秒钟〜10分钟，使隧道壁垒中的氧重新分布，并使隧道壁垒与磁性层之间的界面均匀。 通过快速热退火可以提高磁隧道结的隧穿磁阻和热稳定性。 ＆lt;图像＆GT;

公开(公告)号：KR1020030041417A

公开(公告)日：2003-05-27

申请号：KR1020010072201

申请日：2001-11-20

Applicant: 한국과학기술연구원

Inventor： 임상호 ,  박영준 ,  한석희 ,  이우영 ,  신경호 ,  김경숙

IPC: G11C11/15

CPC classification number: H01L43/12 ,  G11C8/14

Abstract: PURPOSE: A magnetic memory and word line making method capable of being applied to sensor are provided to realize a pattern with respect to a wordline/bitline to maximize magnetic field required for converting magnetization. CONSTITUTION: An insulation film(102) is formed on a semiconductor substrate(100), and a trench of a predetermined depth is formed by using the insulation film. A seed film(106) is deposited on an entire surface of the trench. A conductive film(108) of a copper material is coated on the seed film so as to cover the trench sufficiently. A CMP process is performed until an upper surface of the insulation film is exposed.

Abstract translation: 目的：提供能够应用于传感器的磁存储器和字线制作方法，以实现相对于字线/位线的图案，以最大化磁化转化所需的磁​​场。 构成：在半导体衬底（100）上形成绝缘膜（102），通过使用绝缘膜形成预定深度的沟槽。 种子膜（106）沉积在沟槽的整个表面上。 将铜材料的导电膜（108）涂覆在种皮膜上，以充分覆盖沟槽。 进行CMP处理直到绝缘膜的上表面露出。

公开(公告)号：KR1020020087745A

公开(公告)日：2002-11-23

申请号：KR1020010026737

申请日：2001-05-16

Applicant: 한국과학기술연구원

Inventor： 박영준 ,  신경호 ,  이우영

IPC: H01L21/66

Abstract: PURPOSE: A method for destructive strength test of thin film are provided to measure destructive strength by electromigration phenomenon generating in a line. CONSTITUTION: A line(13) is formed of a materiel of good atomic diffusion. The anode(16) of the line is formed of a material of bad atomic diffusion. A thin film of non-conductive material is coated on the line. Applying current to the line, destruction by compressive stress on the anode is estimated by controlling current density of the line.

Abstract translation: 目的：提供一种薄膜的破坏强度试验方法，以通过线中电迁移现象来测量破坏强度。 构成：线（13）由良好的原子扩散材料形成。 线的阳极（16）由原子扩散不良的材料形成。 线路上涂有非导电材料薄膜。 将电流施加到线路上，通过控制线路的电流密度来估计阳极上的压应力的破坏。