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公开(公告)号：KR1020130128651A
公开(公告)日：2013-11-27
申请号：KR1020120052524
申请日：2012-05-17
Applicant: 한국전자통신연구원
CPC classification number: H01S5/0609 , H01S5/1042 , H01S5/2013
Abstract: The present invention relates to an electro-absorption modulator laser. The present invention includes a single wavelength laser which includes a first multiple quantum well, has a ridge structure, and outputs an optical signal; an electro-absorption modulator which includes a second multiple quantum well, has a ridge structure, and modulates the optical signal outputted from the single wavelength laser; and a mode converter which changes the mode size of the optical signal modulated by the electro-absorption modulator and has a ridge structure. The single wavelength laser and the electro-absorption modulator are butt-combined.
Abstract translation: 本发明涉及一种电吸收式调制激光器。 本发明包括单波长激光器，其包括第一多量子阱，具有脊结构，并输出光信号; 包括第二多量子阱的电吸收调制器具有脊结构，并且调制从单个波长激光器输出的光信号; 以及模式转换器，其改变由电吸收调制器调制的光信号的模式尺寸并具有脊结构。 单波长激光器和电吸收调制器是对接的。
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公开(公告)号：KR1020130074959A
公开(公告)日：2013-07-05
申请号：KR1020110143105
申请日：2011-12-27
Applicant: 한국전자통신연구원
CPC classification number: H04B10/572 , H01S5/02272 , H01S5/0612 , H01S5/101 , H01S5/141 , H01S5/227
Abstract: PURPOSE: The direct coupling type wavelength varying external resonator laser is provided to a working speed by controlling an optical power capable of making the high speed operation. CONSTITUTION: The wavelength varying external resonator laser (1000) comprises a gain medium (500), an optical waveguide structure (400), and the high frequency transmission media (600). The gain medium generates the optical signal according to an approved bias current. The optical waveguide structure comprises a mirror surface by combining with the gain medium, generates lasing inside the mirror facet when the approved bias current is over a threshold value. The high frequency transmission media comprises a dielectric body (610), a metallic thin film wire (620), and a matching resistance unit (630). The dielectric body controls the working speed of the optical signal by adding the high frequency signal in the approved bias current. The metallic thin film wire comprises a transmission line by combining with the dielectric body. The matching resistance unit performs a signal matching function by adding the resistance value of the gain medium.
Abstract translation: 目的：通过控制能够进行高速运行的光功率，将直接耦合型波长变化的外部谐振器激光器提供给工作速度。 构成：波长变化的外部谐振器激光器（1000）包括增益介质（500），光波导结构（400）和高频传输介质（600）。 增益介质根据批准的偏置电流产生光信号。 光波导结构包括通过与增益介质组合的镜面，当认可的偏置电流超过阈值时，在镜面内产生激光。 高频传输介质包括电介质体（610），金属薄膜线（620）和匹配电阻单元（630）。 介质体通过在批准的偏置电流中加入高频信号来控制光信号的工作速度。 金属薄膜线通过与介电体结合而形成传输线。 匹配电阻单元通过增加增益介质的电阻值来执行信号匹配功能。
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公开(公告)号：KR1020120047380A
公开(公告)日：2012-05-14
申请号：KR1020100108684
申请日：2010-11-03
Applicant: 한국전자통신연구원
CPC classification number: H01S5/141 , H01S5/0265 , H01S5/06256 , H01S5/1032 , H01S5/22
Abstract: PURPOSE: An apparatus for generating a wavelength tunable external cavity laser is provided to perform high speed modulation by integrating a light amplifier, a reflective multimode intervening machine, and light modulator on one substrate into a successive waveguide form. CONSTITUTION: A light amplifier(130), a reflective multimode intervening device(140), and a light signal processor(150) are offered on a first substrate(110). The light amplifier, the reflective multimode intervening device, and the light signal processor form a successive wave guide. An external wavelength tunable reflector(220) is offered on a second substrate(210). The external wavelength tunable reflector reflects light corresponding to a specific wave from lights which enter. A mode intervening device reflects some of incident lights. The mode intervening device transmits the rest light of the incident lights. The light amplifier is installed between the external wavelength tunable reflector and the reflective multimode intervening device.
Abstract translation: 目的：提供一种用于产生波长可调谐外腔激光器的装置，通过将光放大器，反射多模插入机和光调制器在一个衬底上集成成连续的波导形式来执行高速调制。 构成：在第一基板（110）上提供光放大器（130），反射多模插入装置（140）和光信号处理器（150）。 光放大器，反射多模插入装置和光信号处理器形成连续的波导。 在第二基板（210）上提供外部波长可调谐反射器（220）。 外部波长可调谐反射器从入射的光反射相应于特定波的光。 模式中介装置反映了一些入射灯。 模式中间装置传输入射光的其余光。 光放大器安装在外部波长可调谐反射器和反射多模中间装置之间。
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公开(公告)号：KR100987794B1
公开(公告)日：2010-10-13
申请号：KR1020080131060
申请日：2008-12-22
Applicant: 한국전자통신연구원
IPC: H01L21/31 , H01L21/324
CPC classification number: H01L21/2007 , H01L21/76251
Abstract: 본 발명은 반도체 장치의 제조 방법을 제공한다. 이 방법은 제 1 및 제 2 층들, 제 1 및 제 2 층들 사이의 이온 주입층, 및 제 2 층 상에 산화 억제막을 형성하는 것 그리고 열 처리 공정을 수행하여 산화 억제막에 의해 제 2 층의 손실을 억제하며 제 1 및 제 2 층들 사이에 절연층을 형성하는 것을 포함한다.
열 처리 공정, 산화 억제막, 희생막Abstract translation: 本发明提供了一种制造半导体器件的方法。 该方法包括以下步骤：在第一和第二层上形成氧化抑制膜，在第一和第二层之间的离子注入层和第二层，并且执行热处理工艺， 并在第一和第二层之间形成绝缘层。
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公开(公告)号：KR100987793B1
公开(公告)日：2010-10-13
申请号：KR1020080099613
申请日：2008-10-10
Applicant: 한국전자통신연구원
IPC: H04B10/291 , H04B10/00 , H01S3/16
CPC classification number: H01S5/50 , H01S5/026 , H01S5/0608 , H01S5/06258 , H01S5/1014 , H01S5/509
Abstract: 반사형 반도체 광 증폭기가 제공된다. 상기 반사형 반도체 광 증폭기는 외부로부터 입사되는 하향 광신호가 이득을 가지도록 동작하는 신호 증폭 영역과, 상기 신호 증폭 영역과 연결되고 변조된 레이저 신호를 발생하는 신호 변조 영역을 포함한다. 상기 하향 광신호는 상기 변조된 레이저 신호에 의한 교차이득 변조를 통해 증폭되어 상향 광신호로서 출력된다. 상기 레이저 신호의 파장 대역은 상기 하향 광신호와는 다른 파장 대역을 갖고, 상기 증폭의 이득 대역에 포함된다.
광 증폭기, 레이저, 변조, 교차이득-
Patent Agency Ranking
公开(公告)号：KR1020100040481A
公开(公告)日：2010-04-20
申请号：KR1020080099613
申请日：2008-10-10
Applicant: 한국전자통신연구원
IPC: H04B10/291 , H04B10/00 , H01S3/16
CPC classification number: H01S5/50 , H01S5/026 , H01S5/0608 , H01S5/06258 , H01S5/1014 , H01S5/509
Abstract: PURPOSE: A reflective semiconductor optical amplification device and an optical signal processing method using the same are provided to reduce the cost of manufacturing using a reflective semiconductor amplifier which uses one optical fiber. CONSTITUTION: An optical signal amplification are(102) supplies gain to a downlink optical signal applied from the outside. An optical signal modulation area(103) is connected with the optical signal amplification area and generates a modulated optical signal. The downlink optical signal is amplified through cross gain modulation by the modulated optical signal and outputted as an uplink optical signal. The optical signal amplification area includes a semiconductor amplifier. The optical signal demodulation area includes a laser diode. The optical signal amplification and demodulation areas respectively have a first electrode and a second electrode. The first and the second electrodes receive independent current.
Abstract translation: 目的：提供一种反射半导体光放大装置和使用该反射半导体光放大装置的光信号处理方法，以减少使用使用一根光纤的反射半导体放大器的制造成本。 构成：光信号放大（102）向从外部施加的下行光信号提供增益。 光信号调制区域（103）与光信号放大区域连接并产生调制光信号。 下行光信号通过调制光信号的交叉增益调制进行放大，作为上行光信号输出。 光信号放大区包括半导体放大器。 光信号解调区域包括激光二极管。 光信号放大和解调区域分别具有第一电极和第二电极。 第一和第二电极接收独立电流。
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公开(公告)号：KR1020090064952A
公开(公告)日：2009-06-22
申请号：KR1020070132341
申请日：2007-12-17
Applicant: 한국전자통신연구원
IPC: G02B6/10
Abstract: A semiconductor integrated circuit including a diffraction grating coupler for an optical communication, and a manufacturing method thereof are provided to improve optical coupling efficiency of a semiconductor integrated circuit by sending a part of an optical signal transmitted under an optical waveguide to the optical waveguide by a reflector. A semiconductor integrated circuit including a diffraction grating coupler for an optical communication includes a coating layer(102), a coupler(115), and a reflector(120a). The coating layer is arranged on a semiconductor substrate(100). The diffraction grating coupler includes an optical waveguide(112) which is arranged on the coating layer, and a diffraction grating(113) which is arranged on the optical waveguide. The reflector is formed inside the coating layer under the diffraction grating.
Abstract translation: 提供一种包括用于光通信的衍射光栅耦合器及其制造方法的半导体集成电路及其制造方法，用于通过将在光波导下传输的光信号的一部分发送到光波导来提高半导体集成电路的光耦合效率 反射器。 包括用于光通信的衍射光栅耦合器的半导体集成电路包括涂层（102），耦合器（115）和反射器（120a）。 涂层设置在半导体衬底（100）上。 衍射光栅耦合器包括布置在涂层上的光波导（112）和布置在光波导上的衍射光栅（113）。 反射体形成在衍射光栅下面的涂层内。
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公开(公告)号：KR1020090060859A
公开(公告)日：2009-06-15
申请号：KR1020070127813
申请日：2007-12-10
Applicant: 한국전자통신연구원
IPC: G02B6/12
CPC classification number: G02B6/12007
Abstract: A waveguide structure is provided, which makes the implementation of the stable photonics device possible by reducing peak wavelength change of the wave guide according to temperature. A waveguide structure comprises the slotted channel waveguide(SLW), the first upper film, and the second upper film(142). The slotted channel waveguide comprises the first and second patterns which are separated from each other and define the slot. The first upper film covers a part of the slotted channel waveguide. The second upper film covers the rest of the slotted channel waveguide.
Abstract translation: 提供了一种波导结构，通过根据温度降低波导的峰值波长变化，可以实现稳定的光子器件。 波导结构包括开槽通道波导（SLW），第一上部膜和第二上部膜（142）。 开槽通道波导包括彼此分离并限定狭槽的第一和第二图案。 第一上部膜覆盖开槽沟道波导的一部分。 第二上膜覆盖开槽沟道波导的其余部分。
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公开(公告)号：KR1020090047114A
公开(公告)日：2009-05-12
申请号：KR1020070113130
申请日：2007-11-07
Applicant: 한국전자통신연구원
IPC: H01S3/0941 , B82Y40/00
CPC classification number: G02B6/12004 , G02B2006/12121 , G02B2006/12152 , H01S5/021 , H01S5/0215 , H01S5/0218 , H01S5/026 , H01S5/1014 , H01S5/1032 , H01S5/32316 , H01S5/32333
Abstract: 실리콘층 및 화합물 반도체층을 각각 슬랩 도파로 및 채널 도파로로 이용하는 하이브리드 레이저 다이오드가 제공된다. 본 발명에 따른 하이브리드 레이저 다이오드는 도파 모드의 손실, 누설 전류 및 직렬 저항을 줄일 수 있으며, 개선된 열 방출 특성을 갖는다. 특히, 본 발명에 따르면, 활성영역 및 도파로가 분명하게 정의될 수 있다.
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公开(公告)号：KR100785772B1
公开(公告)日：2007-12-18
申请号：KR1020060036356
申请日：2006-04-21
Applicant: 한국전자통신연구원
IPC: H01S5/30
Abstract: 전도대의 전자장벽을 높이고 정공의 흐름을 원활하게 할 수 있는 반도체 레이저 다이오드를 제공한다. 그 다이오드는 활성층의 타측에 접촉되며, 활성층에 대하여 에너지 단차를 이루는 제2 화합물 반도체층 및 제2 화합물 반도체층과 비전도대 에너지 단차(ΔEv)가 0인 임계점을 갖도록, 제2 반도체층에 삽입되어 제2 화합물 반도체층을 분리하는 제3 화합물 반도체층을 포함한다.
전자장벽, 정공, 에너지 단차, 임계, 타입-II
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