公开(公告)号：WO2008057616A8

公开(公告)日：2010-03-18

申请号：PCT/US2007063830

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C23C16/00 ,  H01L21/20 ,  H01L31/20

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

公开(公告)号：SG176449A1

公开(公告)日：2011-12-29

申请号：SG2011080819

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Abstract: ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMSAbstractAntimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such filmsFigure 1

公开(公告)号：WO2010088194A2

公开(公告)日：2010-08-05

申请号：PCT/US2010022050

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

IPC: C11D3/43 ,  C11D3/44

CPC classification number: C11D11/0041 ,  C11D1/66 ,  C11D1/667 ,  C11D1/825 ,  C11D3/2072 ,  C11D3/2093 ,  C11D3/43 ,  C11D11/0047 ,  G03F7/70341 ,  G03F7/70925

Abstract: Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.

Abstract translation: 使用所述组合物从表面除去聚合材料的组合物和方法，优选地从光刻设备清洗污染物积聚物，而无需完全拆卸所述设备。

公开(公告)号：WO2007133837A3

公开(公告)日：2008-03-13

申请号：PCT/US2007063832

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

Inventor： ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

IPC: G11C11/00

CPC classification number: H01L51/0002 ,  C07F7/30 ,  C23C16/305 ,  C23C16/45553

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350°C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Abstract translation: 一种用于在基板上形成相变记忆材料的系统和方法，其中，在温度低于350℃的条件下，在产生硫属化物合金沉积的条件下，在温度低于350℃的条件下，基板与相变存储器硫族化合物的前体接触， 通过化学气相沉积或原子层沉积进行接触。 描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。

公开(公告)号：WO2012048079A2

公开(公告)日：2012-04-12

申请号：PCT/US2011055049

申请日：2011-10-06

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  THOMAS NICOLE E ,  LIPPY STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  ZHANG PENG

Inventor： CHEN TIANNIU ,  THOMAS NICOLE E ,  LIPPY STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  ZHANG PENG

IPC: C23F1/02 ,  C23F1/44

CPC classification number: H01L21/28088 ,  B81C1/00539 ,  H01L21/28079 ,  H01L21/32134 ,  H01L21/823842

Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

Abstract translation: 一种用于从其上具有所述材料的微电子器件相对于第二金属栅极材料（例如，氮化钽）选择性地移除第一金属栅极材料（例如，氮化钛）的移除组合物和工艺。 去除组合物可以包括氟化物或者可选地基本上不含氟化物。 衬底优选地包括高k /金属栅集成方案。

公开(公告)号：WO2011056948A2

公开(公告)日：2011-05-12

申请号：PCT/US2010055418

申请日：2010-11-04

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  KORZENSKI MICHAEL B ,  JIANG PING ,  DUBOIS LAWRENCE H

Inventor： CHEN TIANNIU ,  KORZENSKI MICHAEL B ,  JIANG PING ,  DUBOIS LAWRENCE H

IPC: H01L31/042 ,  H01L31/0236

CPC classification number: H01L31/02363 ,  Y02E10/50

Abstract: Novel methods for the texturing of photovoltaic cells is described, wherein texturing minimizes reflectance losses and hence increases solar cell efficiency. In one aspect, a microstamp with the mirror inverse of the optimum surface structure is described. The photovoltaic cell substrate to be etched and the microstamp are immersed in a bath and pressed together to yield the optimum surface structure. In another aspect, nanoscale structures are introduced to the surface of a photovoltaic cell by depositing nanoparticles or introducing metal induced pitting to a substrate surface. In still another aspect, remote plasma source (RPS) or reactive ion etching (RIE), is used to etch nanoscale features into a silicon-containing substrate.

Abstract translation: 描述了用于光伏电池纹理化的新方法，其中纹理使反射损失最小化并因此增加太阳能电池效率。 在一个方面，描述了具有最佳表面结构的反射镜的微型电阻。 要蚀刻的光伏电池基板和微型电极浸入浴中并压在一起以产生最佳的表面结构。 在另一方面，通过沉积纳米颗粒或将金属诱导的点蚀引入到衬底表面，将纳米尺度结构引入光伏电池的表面。 在另一方面，使用远程等离子体源（RPS）或反应离子蚀刻（RIE）将纳米尺度特征蚀刻到含硅衬底中。

公开(公告)号：WO2008057616A3

公开(公告)日：2009-04-09

申请号：PCT/US2007063830

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C23C16/00 ,  H01L21/20 ,  H01L31/20

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

公开(公告)号：WO2012027667A3

公开(公告)日：2012-05-10

申请号：PCT/US2011049347

申请日：2011-08-26

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  BILODEAU STEVEN ,  SHEU CHIMIN ,  NAKANISHI MUTSUMI ,  MATSUOKA MASAHIRO ,  NAKAYAMA FUMIO ,  ZHANG PENG ,  KORZENSKI MICHAEL B ,  COOPER EMANUEL I ,  VECCHARELLI KATE ,  PAYNE MAKONNEN

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  SHEU CHIMIN ,  NAKANISHI MUTSUMI ,  MATSUOKA MASAHIRO ,  NAKAYAMA FUMIO ,  ZHANG PENG ,  KORZENSKI MICHAEL B ,  COOPER EMANUEL I ,  VECCHARELLI KATE ,  PAYNE MAKONNEN

IPC: H01L21/302

CPC classification number: C09C3/08 ,  B81C1/00619 ,  B81C1/00928 ,  H01L21/02082 ,  H01L21/302 ,  H01L21/306

Abstract: Methods of reducing the capillary forces experienced by fragile high aspect ratio structures during drying to substantially prevent damage to said high aspect ratio structures during drying. They include modifying the surface of the high aspect ratio structures such that the forces are sufficiently minimized and as such less than 10% of the high aspect ratio features will have bent or collapsed during drying of the structure having said features thereon.

Abstract translation: 在干燥过程中减少脆性高纵横比结构所经受的毛细管力的方法，以基本上防止在干燥过程中对所述高纵横比结构造成损坏。 它们包括改变高纵横比结构的表面，使得力被充分地最小化，并且因此在其具有所述特征的结构的干燥期间，小于10％的高纵横比特征将具有弯曲或折叠。

公开(公告)号：WO2009134989A2

公开(公告)日：2009-11-05

申请号：PCT/US2009042290

申请日：2009-04-30

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  HUNKS WILLIAM ,  CHEN PHILIP S H ,  XU CHONGYING ,  MAYLOTT LEAH

Inventor： CHEN TIANNIU ,  HUNKS WILLIAM ,  CHEN PHILIP S H ,  XU CHONGYING ,  MAYLOTT LEAH

IPC: C07F9/90 ,  H01L21/20 ,  H01L45/00

CPC classification number: H01L21/02568 ,  C07C211/65 ,  C07F9/902 ,  C07F9/908 ,  C23C16/18 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616

Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract translation: 用于在诸如晶片或其他微电子器件基底的基底上沉积含锑膜的前体，以及制备和使用这些前体的相关工艺以及这些前体的源封装。 这些前体可用于通过诸如化学气相沉积（CVD）和原子层沉积（ALD）的沉积技术在制造非易失性相变存储器（PCM）中或用于制造热电装置时沉积Ge2Sb2Te5硫族化物薄膜。

公开(公告)号：WO2008088563A3

公开(公告)日：2009-04-09

申请号：PCT/US2007063831

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  XU CHONGYING ,  HENDRIX BRYAN C ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  STENDER MATTHIAS ,  CHEN TIANNIU

Inventor： XU CHONGYING ,  HENDRIX BRYAN C ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  STENDER MATTHIAS ,  CHEN TIANNIU

IPC: H01L21/44 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/365 ,  H01L21/441

CPC classification number: C07F17/02

Abstract: Precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of strontium ruthenium oxide (SrRuO3) thin films, e.g., in the manufacture of microelectronic devices, as well as processes of making and using such precursors, and precursor supply systems containing such precursor compositions in packaged form. Cyclopentadienyl compounds of varied type are described, including cyclopentadienyl as well as non cyclopentadienyl ligands coordinated to ruthenium, strontium or barium central atoms. The precursors of the invention are useful for forming contacts for microelectronic memory device structures, and in a specific aspect for selectively coating copper metallization without deposition on associated dielectric, under deposition conditions in a forming gas ambient.

Abstract translation: 用于原子层沉积（ALD）和氧化钌氧化物（SrRuO 3）薄膜的化学气相沉积（CVD）的前体组合物，例如在微电子器件的制造中，以及制备和使用这些前体的方法以及前体供应 含有包装形式的前体组合物的体系。 描述了不同类型的环戊二烯基化合物，包括环戊二烯基以及与钌，锶或钡中心原子配位的非环戊二烯基配位体。 本发明的前体可用于形成用于微电子存储器件结构的接触，并且在特定方面，用于在形成气体环境中的沉积条件下，在相关联的电介质上不沉积而选择性地涂覆铜金属化。