公开(公告)号：WO2012010458A1

公开(公告)日：2012-01-26

申请号：PCT/EP2011/061822

申请日：2011-07-12

Applicant: ASML NETHERLANDS B.V. ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie ,  FUCHS, Andreas ,  COOGANS, Martyn ,  BHATTACHARYYA, Kaustuve ,  KUBIS, Michael ,  MORGAN, Stephen

Inventor： VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie ,  FUCHS, Andreas ,  COOGANS, Martyn ,  BHATTACHARYYA, Kaustuve ,  KUBIS, Michael ,  MORGAN, Stephen

IPC: G03F7/20

CPC classification number: A01H1/06 ,  A01G22/00 ,  C12N15/8201 ,  G03B27/52 ,  G03B27/53 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p (n'), p (n'') and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.

Abstract translation: 确定重叠错误的方法。 测量具有过程引起的不对称性的覆盖目标。 构建目标模型。 修改模型，例如通过移动结构之一来补偿不对称性。 使用修改的模型计算不对称引起的覆盖误差。 通过从测量的重叠错误中减去不对称引起的覆盖误差来确定生产目标中的重叠错误。 在一个示例中，通过改变不对称p（n'），p（n“）修改模型，并且对于多个散射仪测量配方重复计算不对称引起的重叠误差，并且确定叠加误差的步骤 生产目标使用计算的不对称引起的重叠误差来选择用于测量生产目标的最佳散射仪测量配方。

公开(公告)号：WO2011015412A1

公开(公告)日：2011-02-10

申请号：PCT/EP2010/059460

申请日：2010-07-02

Applicant: ASML Netherlands B.V. ,  IVANOV, Vitalii ,  DEN BOEF, Arie ,  BANINE, Vadim ,  SCACCABAROZZI, Luigi ,  IOSAD, Nikolay

Inventor： IVANOV, Vitalii ,  DEN BOEF, Arie ,  BANINE, Vadim ,  SCACCABAROZZI, Luigi ,  IOSAD, Nikolay

IPC: G03F1/00 ,  G03F1/14 ,  G01N21/64 ,  G01N21/95

CPC classification number: G03F1/84 ,  G01N21/6408 ,  G01N21/6489 ,  G01N21/65 ,  G01N21/94 ,  G01N21/9501 ,  G01N21/956 ,  G03F1/24

Abstract: Methods and systems for inspection of an object include the use of spectroscopic techniques for the detection of unwanted particles on an object's surface, based on the different responses of the unwanted particles as compared with the object to be inspected due to their different materials. Time resolved spectroscopy and/or energy resolved spectroscopy of secondary photon emission from the surface of the object can be used to obtain Raman and photoluminescence spectra. The objects to be inspected can for example be a patterning device as used in a lithographic process, for example a reticle, in which case the presence of metal, metal oxide or organic particles can be detected, for example. The methods and apparatus are highly sensitive, for example, being able to detect small particles (sub 100 nm, particularly sub 50 nm) on the patterned side of an EUV reticle.

Abstract translation: 用于检查物体的方法和系统包括使用光谱技术来检测物体表面上的不需要的颗粒，这是由于不同的物质与不同的物质相比，由于不同的物质而与被检查物体的不同响应。 可以使用来自物体表面的二次光子发射的时间分辨光谱和/或能量分辨光谱来获得拉曼和光致发光光谱。 待检查的物体可以是例如在光刻工艺中使用的图案形成装置，例如掩模版，在这种情况下，例如可以检测到金属，金属氧化物或有机颗粒的存在。 所述方法和装置是高度敏感的，例如能够检测EUV掩模版图案侧的小颗粒（小于100nm，特别是低于50nm）。

公开(公告)号：WO2013087431A3

公开(公告)日：2013-06-20

申请号：PCT/EP2012/074163

申请日：2012-11-30

Applicant: ASML NETHERLANDS B.V.

Inventor： DEN BOEF, Arie ,  BHATTACHARYYA, Kaustuve ,  JAK, Martin ,  KUBIS, Michael

IPC: G03F9/00 ,  G03F7/20

Abstract: Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.

公开(公告)号：WO2011107302A2

公开(公告)日：2011-09-09

申请号：PCT/EP2011/050246

申请日：2011-01-11

Applicant: ASML Netherlands B.V. ,  KRUIJT-STEGEMAN, Yvonne ,  DEN BOEF, Arie ,  JEUNINK, Andre ,  WUISTER, Sander

Inventor： KRUIJT-STEGEMAN, Yvonne ,  DEN BOEF, Arie ,  JEUNINK, Andre ,  WUISTER, Sander

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7042

Abstract: A method of determining a position of an imprint template in an imprint lithography apparatus is disclosed. In an embodiment, the method includes illuminating an area of the imprint template in which an alignment mark is expected to be found by scanning an alignment radiation beam over that area, detecting an intensity of radiation reflected or transmitted from the area, and identifying the alignment mark via analysis of the detected intensity.

Abstract translation: 公开了一种在压印光刻设备中确定压印模板的位置的方法。 在一个实施例中，该方法包括通过扫描在该区域上的对准辐射束来照射其中期望找到对准标记的压印模板的区域，检测从该区域反射或发射的辐射的强度，以及识别对准 通过分析检测到的强度来标记。

公开(公告)号：WO2010130600A1

公开(公告)日：2010-11-18

申请号：PCT/EP2010/056016

申请日：2010-05-04

Applicant: ASML NETHERLANDS B.V. ,  DEN BOEF, Arie ,  CRAMER, Hugo ,  HINNEN, Paul

Inventor： DEN BOEF, Arie ,  CRAMER, Hugo ,  HINNEN, Paul

IPC: G03F7/20

CPC classification number: G03F7/70641

Abstract: A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.

Abstract translation: 使用一种方法来确定在光刻工艺中使用的光刻设备在基板上的焦点。 光刻工艺用于在衬底上形成至少两个周期性结构。 每个结构具有至少一个特征，其具有相对的侧壁角度之间的不对称性，所述相对侧壁角度随着光刻设备在基底上的焦点的不同功能而变化。 测量通过将辐射束引导到至少两个周期性结构上产生的光谱，并且确定不对称性的比率。 使用每个结构的焦点和侧壁不对称之间的比率和关系来确定光刻设备在基底上的焦点。

公开(公告)号：WO2017016903A1

公开(公告)日：2017-02-02

申请号：PCT/EP2016/066913

申请日：2016-07-15

Applicant: ASML NETHERLANDS B.V.

Inventor： DEN BOEF, Arie

IPC: G03F7/20

CPC classification number: G03F7/70133 ,  G01B11/272 ,  G01N21/4788 ,  G01N2201/06113 ,  G03F7/70625 ,  G03F7/70633

Abstract: An inspection apparatus is provided for measuring properties of a non-periodic product structure (500'). A radiation source (402) and an image detector (408) provide a spot (S) of radiation on the product structure. The radiation is spatially coherent and has a wavelength less than 50 nm, for example in the range 12-16 nm or 1-2 nm. The image detector is arranged to capture at least one diffraction pattern (606) formed by said radiation after scattering by the product structure. A processor receives the captured pattern and also reference data (612) describing assumed structural features of the product structure. The process uses coherent diffraction imaging (614) to calculate a 3-D image of the structure using the captured diffraction pattern(s) and the reference data. The coherent diffraction imaging may be for example ankylography or ptychography. The calculated image deviates from the nominal structure, and reveals properties such as CD, overlay.

Abstract translation: 提供了用于测量非周期性产品结构（500'）的性质的检查装置。 辐射源（402）和图像检测器（408）在产品结构上提供辐射点（S）。 辐射是空间相干的并且具有小于50nm的波长，例如在12-16nm或1-2nm的范围内。 图像检测器布置成捕获由产品结构散射之后由所述辐射形成的至少一个衍射图案（606）。 处理器接收捕获的图案以及描述产品结构的假定的结构特征的参考数据（612）。 该方法使用相干衍射成像（614）来使用捕获的衍射图案和参考数据来计算结构的3-D图像。 相干衍射成像可以是例如基质照相术或ptychography。 计算的图像偏离标称结构，并显示诸如CD，叠加等属性。

公开(公告)号：WO2014053334A1

公开(公告)日：2014-04-10

申请号：PCT/EP2013/069540

申请日：2013-09-20

Applicant: ASML NETHERLANDS B.V.

Inventor： DEN BOEF, Arie ,  KREUZER, Justin ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  NIJMEIJER, Gerrit, Johannes ,  SWINDAL, J. Christian ,  TINNEMANS, Patricius Aloysius Jacobus ,  VAN HAREN, Richard

IPC: G03F9/00

CPC classification number: G01B11/002 ,  G03F7/70775 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7088 ,  H01L22/12

Abstract: An apparatus to measure the position of a mark, the apparatus including an objective lens to direct radiation on a mark using radiation supplied by an illumination arrangement; an optical arrangement to receive radiation diffracted and specularly reflected by the mark, wherein the optical arrangement is configured to provide a first image and a second image, the first image being formed by coherently adding specularly reflected radiation and positive diffraction order radiation and the second image being formed by coherently adding specularly reflected radiation and negative diffraction order radiation; and a detection arrangement to detect variation in an intensity of radiation of the first and second images and to calculate a position of the mark in a direction of measurement therefrom.

Abstract translation: 一种用于测量标记位置的装置，该装置包括使用由照明装置提供的辐射将辐射引导到标记上的物镜; 接收由标记衍射并被镜面反射的辐射的光学装置，其中所述光学装置被配置为提供第一图像和第二图像，所述第一图像通过相干地添加镜面反射辐射和正衍射级辐射而形成，并且所述第二图像 通过相干地加入镜面反射辐射和负衍射级辐射形成; 以及检测装置，用于检测第一和第二图像的辐射强度的变化，并计算标记在测量方向上的位置。

公开(公告)号：WO2010149403A1

公开(公告)日：2010-12-29

申请号：PCT/EP2010/054785

申请日：2010-04-13

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V. ,  DEN BOEF, Arie ,  VLADIMIRSKY, Yuli ,  SHMAREV, Yevgeniy ,  SCACCABAROZZI, Luigi ,  THARALDSEN, Robert ,  JACOBS, Richard

Inventor： DEN BOEF, Arie ,  VLADIMIRSKY, Yuli ,  SHMAREV, Yevgeniy ,  SCACCABAROZZI, Luigi ,  THARALDSEN, Robert ,  JACOBS, Richard

IPC: G01N21/94 ,  G01N21/956

CPC classification number: G03F1/84 ,  G01N21/94 ,  G01N21/95607 ,  G01N2021/95676 ,  G03H1/0443 ,  G03H2001/0264 ,  G03H2001/0447 ,  G03H2001/0456 ,  G03H2001/0458 ,  G03H2222/43 ,  G03H2223/12 ,  G03H2223/55

Abstract: Disclosed are systems and methods for object inspection, in particular for inspection of reticles used in a lithography process. The method includes interferometrically combining a reference radiation beam with a probe radiation beam, and storing their complex field images. The complex field image of one object is then compared with that of a reference object to determine the differences. The systems and methods have particular utility in the inspection of a reticle for defects.

Abstract translation: 公开了用于物体检查的系统和方法，特别是用于光刻工艺中使用的光罩的检查。 该方法包括将参考辐射束与探针辐射束干涉地组合，并存储其复杂场图像。 然后将一个对象的复杂场图像与参考对象的复合场图像进行比较以确定差异。 这些系统和方法在检查用于缺陷的掩模版时具有特殊的用途。

公开(公告)号：WO2010115686A1

公开(公告)日：2010-10-14

申请号：PCT/EP2010/053390

申请日：2010-03-16

Applicant: ASML NETHERLANDS B.V. ,  DEN BOEF, Arie

Inventor： DEN BOEF, Arie

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: An overlay error between two successive layers produced by a lithographic process on a substrate is determined by using the lithographic process to form at least one periodic structure of a same pitch on each of the layers. One or more overlaid pairs of the periodic structures are formed in parallel, but offset relative to each other. A spectrum, produced by directing a beam of radiation onto the one or more pairs of periodic structures is measured. One or more portions of the spectrum are determined in which the relationship between the offset between the one or more pairs of periodic structures and the resultant variation in measured intensity of the spectrum at the one or more portions is more linear than the relationship outside the one or more portions. The offset between the one or more pairs of periodic structures on the basis of intensity measurements of the spectrum in the one or more portions of the spectrum is determined and used to determine the overlay error.

Abstract translation: 通过使用光刻工艺在每个层上形成相同间距的至少一个周期性结构来确定由基板上的光刻工艺产生的两个连续层之间的重叠误差。 一个或多个重叠的周期结构对平行地形成，但是相对于彼此偏移。 测量通过将辐射束引导到一对或多对周期性结构上而产生的光谱。 确定光谱的一个或多个部分，其中在一个或多个部分之间的一个或多个周期性结构对之间的偏移与所测量的光谱强度的变化之间的关系比一个或多个部分之外的关系更线性 或更多部分。 基于频谱的一个或多个部分中的频谱的强度测量确定一对或多对周期性结构之间的偏移，并用于确定覆盖误差。

公开(公告)号：WO2009156225A1

公开(公告)日：2009-12-30

申请号：PCT/EP2009/055809

申请日：2009-05-14

Applicant: ASML NETHERLANDS B.V. ,  DEN BOEF, Arie

Inventor： DEN BOEF, Arie

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: An overlay measurement apparatus has a polarized light source for illuminating a sample with a polarized light beam and an optical system to capture light that is scattered by the sample. The optical system includes a polarizer for transmitting an orthogonal polarization component that is orthogonal to a polarization direction of the polarized light beam. A detector measures intensity of the orthogonal polarization component. A processing unitise connected to the detector, and is arranged to process the orthogonal polarization component for overlay metrology measurement using asymmetry data derived from the orthogonal polarization component.

Abstract translation: 覆盖测量装置具有用于利用偏振光束照射样品的偏振光源和用于捕获被样品散射的光的光学系统。 光学系统包括偏振器，用于透射与偏振光束的偏振方向正交的正交偏振分量。 检测器测量正交偏振分量的强度。 一种与检测器连接的处理单元，并且被布置为使用从正交偏振分量导出的不对称数据来处理用于覆盖测量测量的正交偏振分量。