公开(公告)号：US20200272061A1

公开(公告)日：2020-08-27

申请号：US16650520

申请日：2018-09-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Edo Maria HULSEBOS ,  Henricus Johannes Lambertus MEGENS ,  Ahmet Koray ERDAMAR ,  Loek Johannes Petrus VERHEES ,  Willem Seine Christian ROELOFS ,  Wendy Johanna Martina VAN DE VEN ,  Hadi YAGUBIZADE ,  Hakki Ergün CEKLI ,  Ralph BRINKHOF ,  Tran Thanh Thuy VU ,  Maikel Robert GOOSEN ,  Maaike VAN T WESTEINDE ,  Weitian KOU ,  Manouk RIJPSTRA ,  Matthijs COX ,  Franciscus Godefridus Casper BIJNEN

IPC: G03F7/20

Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

公开(公告)号：US20210341846A1

公开(公告)日：2021-11-04

申请号：US17377648

申请日：2021-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Franciscus Godefridus Casper BIJNEN ,  Edo Maria HULSEBOS ,  Henricus Johannes Lambertus MEGENS ,  Robert John SOCHA ,  Youping ZHANG

IPC: G03F7/20 ,  G03F9/00 ,  G06F30/39

Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.

公开(公告)号：US20190094721A1

公开(公告)日：2019-03-28

申请号：US16132520

申请日：2018-09-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Edo Maria HULSEBOS ,  Henricus Johannes Lambertus MEGENS ,  Sudharshanan RAGHUNATHAN ,  Boris MENCHTCHIKOV ,  Ahmet Koray ERDAMAR ,  Loek Johannes Petrus VERHEES ,  Willem Seine Christian ROELOFS ,  Wendy Johanna Martina VAN DE VEN ,  Hadi YAGUBIZADE ,  Hakki Ergün CEKLI ,  Ralph BRINKHOF ,  Tran Thanh Thuy VU ,  Maikel Robert GOOSEN ,  Maaike VAN'T WESTEINDE ,  Weitian KOU ,  Manouk RIJPSTRA ,  Matthijs COX ,  Franciscus Godefridus Casper BIJNEN

IPC: G03F9/00 ,  G03F7/20

Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.

公开(公告)号：US20160116849A1

公开(公告)日：2016-04-28

申请号：US14892176

申请日：2014-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Hugo Augustinus Joseph CRAMER ,  Arie Jeffrey DEN BOEF ,  Henricus Johannes Lambertus MEGENS ,  Maurits VAN DER SCHAAR ,  Te-Chih HUANG

IPC: G03F7/20

CPC classification number: G03F7/70133 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of determining a critical-dimension-related property, such as critical dimension (CD) or exposure dose, includes illuminating each of a plurality of periodic targets having different respective critical dimension biases, measuring intensity of radiation scattered by the targets, recognizing and extracting each grating from the image, determining a differential signal, and determining the CD-related property based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use of the determined CD-related property to control a lithography apparatus in lithographic processing of subsequent substrates. In order to use just two CD biases, a calibration may use measurements on a “golden wafer” (i.e. a reference substrate) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.

Abstract translation: 确定临界尺寸相关性质（例如临界尺寸（CD）或曝光剂量）的方法包括照射具有不同的相应临界尺寸偏差的多个周期性靶标中的每一个，测量由靶标散射的辐射的强度，识别和 从图像中提取每个光栅，确定差分信号，并且基于差分信号确定CD相关属性，CD偏差和差分信号以这样的1：1线间比接近零的知识 定期目标。 使用确定的CD相关属性来控制光刻设备在后续基板的光刻处理中。 为了仅使用两个CD偏移，校准可以使用“金色晶片”（即，参考基底）上的测量来确定具有已知CD的每个CD对的强度梯度。 或者，校准可以基于对CD的强度梯度的灵敏度的模拟。

公开(公告)号：US20200081356A1

公开(公告)日：2020-03-12

申请号：US16686418

申请日：2019-11-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Edo Maria HULSEBOS ,  Henricus Johannes Lambertus MEGENS ,  Sudharshanan RAGHUNATHAN ,  Boris MENCHTCHIKOV ,  Ahmet Koray ERDAMAR ,  Loek Johannes Petrus VERHEES ,  Willem Seine Christian ROELOFS ,  Wendy Johanna Martina VAN DE VEN ,  Hadi YAGUBIZADE ,  Hakki Ergün CEKLI ,  Ralph BRINKHOF ,  Tran Thanh Thuy VU ,  Maikel Robert GOOSEN ,  Maaike VAN'T WESTEINDE ,  Weitian KOU ,  Manouk RIJPSTRA ,  Matthijs COX ,  Franciscus Godefridus Casper BIJNEN

IPC: G03F9/00 ,  G03F7/20

Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method comprising: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.