公开(公告)号：KR20180039709A

公开(公告)日：2018-04-18

申请号：KR20187007107

申请日：2016-08-09

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA M ,  WEI TE YU ,  GUEVENC HACI OSMAN ,  PROELSS JULIAN ,  LEUNISSEN LEONARDUS

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02

Abstract: (i) 코발트및/또는 (ii) 코발트합금및 (iii) TiN 및/또는 TaN 을함유하는기판 (S) 의화학기계연마를위한화학기계연마 (CMP) 조성물 (Q) 의용도로서, 상기 CMP 조성물 (Q) 이하기를포함하는 CMP 조성물 (Q) 의용도: (E) 무기입자, (F) 아미노기및 산기 (Y) 를함유하는하나이상의유기화합물 (상기화합물은 n 개의아미노기및 n+1 개이상의산성프로톤을함유하고, n 은정수≥ 1 이다), (G) 각각의 CMP 조성물의총 중량에대해서, 0.2 wt.% 내지 2.5 wt.% 의양의하나이상의산화제, (H) 수성매질, CMP 조성물 (Q) 은 6 초과 9 미만의 pH 를가진다.

公开(公告)号：SG11201804636YA

公开(公告)日：2018-07-30

申请号：SG11201804636Y

申请日：2016-12-20

Applicant: BASF SE

Inventor： DÄSCHLEIN CHRISTIAN ,  SIEBERT MAX ,  LAUTER MICHAEL ,  PRZYBYLSKI PETER ,  PROELSS JULIAN ,  KLIPP ANDREAS ,  GUEVENC HACI OSMAN ,  LEUNISSEN LEONARDUS ,  BAUMANN ROELF-PETER ,  WEI TE YU

IPC: H01L21/321 ,  C11D3/00 ,  C11D3/37 ,  C11D11/00

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly- acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, /so-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

公开(公告)号：SG11201704287TA

公开(公告)日：2017-07-28

申请号：SG11201704287T

申请日：2015-12-11

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA ,  GUEVENC HACI OSMAN ,  PROELSS JULIAN ,  LEUNISSEN LEONARDUS

IPC: C09G1/00 ,  C09G1/02

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R1, R2, R3, R4, R5 and R6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C2-C10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：SG11201808692QA

公开(公告)日：2018-11-29

申请号：SG11201808692Q

申请日：2016-04-27

Applicant: BASF SE

Inventor： REICHARDT DR ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIN REZA ,  GUEVENC DR ,  PROELSS DR ,  LEUNISSEN LEONARDUS

IPC: C09G1/02 ,  H01L21/321

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：SG11201804637UA

公开(公告)日：2018-07-30

申请号：SG11201804637U

申请日：2016-12-20

Applicant: BASF SE

Inventor： DÄSCHLEIN CHRISTIAN ,  SIEBERT MAX ,  LAUTER MICHAEL ,  PRZYBYLSKI PETER ,  PROELSS JULIAN ,  KLIPP ANDREAS ,  GUEVENC HACI OSMAN ,  LEUNISSEN LEONARDUS ,  BAUMANN ROELF-PETER ,  WEI TE YU

IPC: C11D3/37 ,  C11D11/00 ,  H01L21/02 ,  H01L21/321

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) polyethylene glycol (PEG) with a mass average molar mass (Mw) in the range of from 400 to 8,000 g/mol, (B) an anionic polymer selected from the group consisting of poly(acrylic acid) (PAA), acrylic acid-maleic acid copolymers, polyaspartic acid (PASA), polyglutamic acid (PGA), polyvinylphosphonic acid, polyvinylsulfonic acid, poly(styrenesulfonic acid), polycarboxylate ethers (PCE), PEG-phosphorous acids, and copolymers of said polymers, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

公开(公告)号：SG11201810119PA

公开(公告)日：2018-12-28

申请号：SG11201810119P

申请日：2017-05-31

Applicant: BASF SE

Inventor： DAESCHLEIN CHRISTIAN ,  SIEBERT MAX ,  LAUTER MICHAEL ,  LEUNISSEN LEONARDUS ,  GARCIA ROMERO IVAN ,  GUEVENC HACI OSMAN ,  PRZYBYLSKI PETER ,  PROELSS JULIAN ,  KLIPP ANDREAS

IPC: C11D1/72 ,  C11D1/722 ,  C11D3/37 ,  C11D11/00 ,  H01L21/02

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein R1 and R3 are idependently from each other hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, iso-Butyl, or sec-butyl, R2 is methyl and x and y are an integer,1 (B)poly(acrylic acid) (PAA) oracrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C)water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

公开(公告)号：SG11201704496RA

公开(公告)日：2017-07-28

申请号：SG11201704496R

申请日：2015-12-22

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA ,  GUEVENC HACI OSMAN ,  PROELSS JULIAN ,  LEUNISSEN LEONARDUS

IPC: C09G1/00

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：SG11201704280QA

公开(公告)日：2017-07-28

申请号：SG11201704280Q

申请日：2015-12-16

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA ,  GUEVENC HACI OSMAN ,  PROELSS JULIAN ,  LEUNISSEN LEONARDUS

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/321

Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.