Abstract:
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate (100). The cathodic structure includes a emitter electrode metal (102) composed of strips of aluminum overlain by a layer of cladding material.
Abstract:
Openings are created in a structure by a process in which a plate (20) is furnished with a sacrificial patterned masking layer divided into multiple laterally separated mask portions (22A). A primary layer of actinic material (28) is provided over the masking layer and in the space between the mask portions. Material of the primary layer that is not shadowed by a mask formed with the mask portions is backside exposed to actinic radiation (30). Material of the primary layer not exposed to the radiation is removed. Segments of the masking layer not covered by exposed material of the primary layer are then removed. Consequently, openings extend through the primary layer where the segments of the masking layer have been removed. The process is typically employed in forming an optical device such as a flat-panel cathode-ray tube display in which the openings in the primary layer receive light-emissive material.
Abstract:
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate (100). The cathodic structure includes a emitter electrode metal (102) composed of strips of aluminum overlain by a layer of cladding material.
Abstract:
A protected faceplate structure (900) includes a faceplate (100) and a barrier layer (902) of silica. The faceplate (100) may be made of soda glass, and the barrier layer (902) may be made of silica.
Abstract:
A flat-panel device is fabricated by a process in which a pair of plate structures (40 and 42) are sealed along their interior surfaces (40A and 42B) to opposite edges (44A and 44B) of an outer wall (44) to form a compartment. Subsequently, exterior support structure (64) is attached to the exterior surface of one of the plate structures (40) to significantly increase resistance of the compartment to bending. Exterior support structure (66) is normally likewise attached to the exterior surface of the other plate structure (42) after the sealing operation. The compartment is then typically pumped down to a high vacuum through a suitable pump-out port (46) and closed. By providing the exterior support structure at such a relatively late stage in the fabrication process, the need for using spacers to support the device against external forces is eliminated or substantially reduced while simultaneously avoiding severe fabrication difficulties that arise in attaching the exterior support structure before the sealing operation.
Title translation:VERWENDUNG EINER OPFERMASKIERUNGSSCHICHT UNDRÜCKSEITIGERBELICHTUNG贝德埃尔斯通公司VONLÖCHERNZUR AUFNAHME VON LICHTEMITTIERENDEM材料,ZUGEHÖRIGELICHTEMITTIERENDE STRUKTUR
Abstract:
Openings are created in a structure by a process in which a plate is furnished with a sacrificial patterned masking layer divided into multiple laterally separated mask portions. A primary layer of actinic material is provided over the masking layer and in space between the mask portions. Material of the primary layer not shadowed by a mask formed with the mask portions is backside exposed to actinic radiation. Material of the primary layer not exposed to the radiation is removed. Segments of the masking layer not covered by exposed material of the primary layer are then removed. Consequently, openings extend through the primary layer where the segments of the masking layer have been removed. The process is typically employed in forming an optical device such as a flat-panel cathode-ray tube display in which the openings in the primary layer receive light-emissive material.
Abstract:
An electron-emitting device employs a multi-layer resistor (46). A lower layer (48) of the resistor overlies an emitter electrode (42). An electron-emissive element (54) overlies an upper layer (50) of the resistor. The two resistive layers are of different chemical composition. The upper resistive layer is typically formed with cermet. The lower resistive layer is typically formed with a silicon-carbon compound. In fabricating the device, the upper resistive layer normally serves as an etch stop for protecting the lower resistive layer and the emitter electrode during the etch of an overlying dielectric layer (52) to form an opening (56) in which the electron-emissive element is later provided.