公开(公告)号：DE68929187T2

公开(公告)日：2000-09-28

申请号：DE68929187

申请日：1989-08-31

Applicant: CANON KK

Inventor： KUROSAWA HIROSHI ,  AMEMIYA MITSUAKI ,  TERASHIMA SHIGERU ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI ,  OZAWA KUNITAKA ,  HARA SHINICHI ,  KAWAKAMI EIGO ,  MIZUSAWA NOBUTOSHI ,  MORI MAKIKO ,  EBINUMA RYUICHI

IPC: G03F7/20

Abstract: An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.

公开(公告)号：DE69031699D1

公开(公告)日：1997-12-18

申请号：DE69031699

申请日：1990-07-11

Applicant: CANON KK

Inventor： AMEMIYA MITSUAKI ,  HARA SHINICHI ,  SAKAMOTO EIJI

IPC: H01L21/30 ,  G03F7/20 ,  H01L21/027 ,  H01L21/683 ,  H01L21/00 ,  H05K13/00

Abstract: A substrate holding device includes a holding table having a reduced pressure passageway; a pressure gauge for measuring a value related to the pressure in the reduced pressure passageway; a pump for producing a pressure difference between a first surface of the substrate to be attracted to the holding table and a second surface of the substrate not to be attracted to the holding table; a valve which can be opened/closed for control of the pressure in the reduced pressure passageway; a pressure control system for controlling the opening/closing of the valve on the basis of an output corresponding to the value measured by the pressure gauge; and a temperature control system for controlling the temperature of the holding table.

公开(公告)号：DE68927430T2

公开(公告)日：1997-03-13

申请号：DE68927430

申请日：1989-08-31

Applicant: CANON KK

Inventor： KUROSAWA HIROSHI ,  AMEMIYA MITSUAKI ,  TERASHIMA SHIGERU ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI ,  OZAWA KUNITAKA ,  MORI MAKIKO ,  EBINUMA RYUICHI ,  HARA SHINICHI ,  MIZUSAWA NOBUTOSHI ,  KAWAKAMI EIGO

IPC: G03F7/20

Abstract: An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.

公开(公告)号：DE3516948A1

公开(公告)日：1985-11-14

申请号：DE3516948

申请日：1985-05-10

Applicant: CANON KK

Inventor： AMEMIYA MITSUAKI

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/32

Abstract: An exposure method for exposing a sensitive layer on a semiconductor wafer to an integrated-circuit pattern of a mask. The exposure is effected by a combination of a primary exposure step for exposing the sensitive layer to the pattern with a beam of high resolution and a secondary exposure step for exposing the sensitive layer with a beam of lower resolution and by an amount which does not have a substantial effect on the sensitization of the sensitive layer. By the combined exposures, the exposure time can be reduced as compared with that required in the exposure only through a high-resolution exposure.

公开(公告)号：DE69033002D1

公开(公告)日：1999-04-22

申请号：DE69033002

申请日：1990-10-01

Applicant: CANON KK

Inventor： SAKAMOTO EIJI ,  EBINUMA RYUICHI ,  AMEMIYA MITSUAKI ,  UZAWA SHUNICHI ,  UDA KOJI

IPC: G03F7/20

Abstract: An exposure apparatus includes a chamber (1) for placing the article in a predetermined ambience; holding device (5) for holding the article in the chamber; a fluid supplying device (3) for supplying a temperature adjusting fluid into the holding device through a flow passageway (4); a detecting device (2) for detecting leakage of the fluid from the flow passageway; and a flow rate controlling device (9) for controlling the flow rate of the fluid to be supplied to the holding device on the basis of detection by the detecting device.

公开(公告)号：DE69223202T2

公开(公告)日：1998-04-16

申请号：DE69223202

申请日：1992-08-28

Applicant: CANON KK

Inventor： MORI MAKIKO ,  OZAWA KUNITAKA ,  AMEMIYA MITSUAKI

IPC: G03F7/20 ,  H01L21/027

Abstract: In an SOR exposure system for transferring patterns on masks to semiconductor wafers by using SOR light (4) reflected by an X-ray reflecting mirror (9A,9B), a first shutter device (5A,5B) for shielding at least gamma rays and a second shutter device (8A,8B) for shielding X-rays are provided between the SOR ring and the mirror inside a beam port, and an exposure adjustment device (11A,11B) for adjusting the amount of exposure when a circuit pattern on a mask (12A,12B) is transferred to a wafer (13A,13B) is provided between the mirror and the wafer. As a result, the human body can be protected against radiation rays, such as gamma rays, generated from the SOR ring when electrons are injected or when the SOR ring is stopped. Damage to the X-ray reflecting mirror caused by radiation rays is reduced, and stable reflectance of the mirror can be obtained. Maintenance of the SOR exposure system is also made easier.

公开(公告)号：DE69126378T2

公开(公告)日：1997-10-30

申请号：DE69126378

申请日：1991-07-31

Applicant: CANON KK

Inventor： AMEMIYA MITSUAKI ,  MIYAKE AKIRA

IPC: G01B11/27 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G03B41/00

Abstract: Disclosed is a device for determining an angle of incident light or a shift in incident light based on the output value of a detector. In a predetermined angle detection range, a beam of light incident on a detector for detecting the intensity of light incident thereon is restricted such that the amount of light continuously increases or decreases in accordance with the angle between an optical axis of the incident light and a referential axis of an exposure apparatus. Outside of the predetermined angle detection range, the amount of light is restricted depending on the direction in which the optical axis of the light is shifted from the angle detection range. The amount of light incident on the detector continuously increases or decreases in accordance with the angle between the optical axis of the incident light and the referential axis when the light is made incident within the angle detection range by means of the light restriction means. It is therefore possible to determine the angle of the incident light from the output value of the detector. When the light is made incident outside of the angle detection range, and since the amount of incident light is restricted in accordance with the direction in which the light is shifted, it is possible to determine the direction in which the light is shifted.

公开(公告)号：DE69030848T2

公开(公告)日：1997-10-16

申请号：DE69030848

申请日：1990-07-31

Applicant: CANON KK

Inventor： AMEMIYA MITSUAKI ,  SAKAMOTO EIJI ,  UDA KOJI ,  OZAWA KUNITAKA ,  IWAMOTO KAZUNORI ,  UZAWA SHUNICHI ,  MARUMO MITSUJI

IPC: H01L21/30 ,  G03F7/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/687

公开(公告)号：DE69115756D1

公开(公告)日：1996-02-08

申请号：DE69115756

申请日：1991-05-17

Applicant: CANON KK

Inventor： HARA SHINICHI ,  AMEMIYA MITSUAKI ,  UZAWA SHUNICHI

IPC: G03F1/22 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03F1/14

Abstract: An X-ray exposure apparatus using radiation light as exposure light is disclosed, wherein the apparatus includes: a display device; a detecting device for detecting in each exposure the amount of exposure as absorbed by a mask during the exposure; a memory for memorizing an accumulated dose of the mask; and a controller for causing the display device to display a dose of the mask, wherein the does to be displayed corresponds to the sum of the accumulated dose as memorized in the memory and the amount of exposure as detected by the detecting device. Also disclosed is a mask structure suitably usable in such an exposure apparatus.

公开(公告)号：GB2279736A

公开(公告)日：1995-01-11

申请号：GB9411823

申请日：1994-06-13

Applicant: CANON KK

Inventor： MIYAKE AKIRA ,  AMEMIYA MITSUAKI

IPC: G01B15/00 ,  G01B11/00 ,  G01T1/29 ,  H05H13/04

Abstract: The position of a beam 2 from a synchrotron ring 1 is determined from the relative outputs of two spaced detectors 3, with correction for the fact that the determination is affected by variation in the absolute value of the beam intensity. The detectors may be wires 3a and 3b above and below a sheet-like beam 2 in which electric currents are produced by the photoelectric effect, and the charged particle current in the ring 1 is measured by a current transformer 5 to provide a correction signal to a computing circuit 6. Alternatively three photocells (8, 10a, 10b) may be placed in the beam path, the relative outputs of two (10a, 10b) of which indicate the beam position. The third photocell (8a) is elongated transversely of the beam so as to provide an output indicative of absolute beam intensity, whatever the position of the beam, for compensation purposes.