公开(公告)号：US20230215998A1

公开(公告)日：2023-07-06

申请号：US18089727

申请日：2022-12-28

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Meng-Hsiang HONG ,  Chi-Shiang HSU ,  Yen-Liang KUO ,  Chien-Ya HUNG ,  Yong-Yang CHEN ,  Yu-Ling LIN ,  Xue-Cheng YAO

IPC: H01L33/60 ,  H01L33/20 ,  H01L33/44 ,  H01L33/40 ,  H01L33/38

CPC classification number: H01L33/60 ,  H01L33/20 ,  H01L33/44 ,  H01L33/405 ,  H01L33/38 ,  H01L33/32

Abstract: A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.

公开(公告)号：US20170141260A1

公开(公告)日：2017-05-18

申请号：US15350893

申请日：2016-11-14

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：US20240339564A1

公开(公告)日：2024-10-10

申请号：US18625617

申请日：2024-04-03

Applicant: EPISTAR CORPORATION

Inventor： Wei-Che WU ,  Chih-Hao CHEN ,  Yu-Ling LIN ,  Chao-Hsing CHEN ,  Yong-Yang CHEN

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/60

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/60

Abstract: A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ¼ of a thickness of the substrate.

公开(公告)号：US20230238488A1

公开(公告)日：2023-07-27

申请号：US18118488

申请日：2023-03-07

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Tsung-Hsun CHIANG ,  Bo-Jiun HU ,  Wen-Hung CHUANG ,  Yu-Ling LIN

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/385 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/0012 ,  H01L33/02

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

公开(公告)号：US20210313388A1

公开(公告)日：2021-10-07

申请号：US17348080

申请日：2021-06-15

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  I-Lun MA ,  Bo-Jiun HU ,  Yu-Ling LIN ,  Chien-Chih LIAO

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/38

Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

公开(公告)号：US20210210659A1

公开(公告)日：2021-07-08

申请号：US17206647

申请日：2021-03-19

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/46 ,  H01L33/38

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

公开(公告)号：US20240234635A9

公开(公告)日：2024-07-11

申请号：US18401106

申请日：2023-12-29

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Tsung-Hsun CHIANG ,  Bo-Jiun HU ,  Wen-Hung CHUANG ,  Yu-Ling LIN

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/385 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/0012 ,  H01L33/02

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

公开(公告)号：US20230261148A1

公开(公告)日：2023-08-17

申请号：US18136921

申请日：2023-04-20

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/46 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/382 ,  H01L33/38 ,  H01L33/405

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

公开(公告)号：US20170005232A1

公开(公告)日：2017-01-05

申请号：US15265069

申请日：2016-09-14

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Tsung-Hsun CHIANG ,  Bo-Jiun HU ,  Wen-Hung CHUANG ,  Yu-Ling LIN

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L33/382 ,  H01L33/0012 ,  H01L33/08 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.

Abstract translation: 半导体发光器件包括：包括第一半导体层，第二半导体层和有源层的半导体堆叠; 穿过所述第二半导体层和所述有源层的多个第一沟槽以暴露所述第一半导体层; 穿过所述第二半导体层和所述有源层以暴露所述第一半导体层的第二沟槽，其中所述第二沟槽设置在所述有源层的最外边缘附近，并且包围所述有源层和所述多个第一沟槽; 形成在所述第二半导体层上并形成在所述多个第一沟槽或所述第二沟槽之一中的图案化金属层; 以及分别形成在所述第二半导体层上并分别电连接所述第二半导体层和所述第一半导体层的第一焊盘部分和第二焊盘部分。

公开(公告)号：US20240194724A1

公开(公告)日：2024-06-13

申请号：US18442843

申请日：2024-02-15

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  I-Lun MA ,  Bo-Jiun HU ,  Yu-Ling LIN ,  Chien-Chih LIAO

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/12 ,  H01L33/24 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L33/24 ,  H01L33/385 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/12 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016

Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.