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公开(公告)号:US3921916A
公开(公告)日:1975-11-25
申请号:US53779974
申请日:1974-12-31
Applicant: IBM
Inventor: BASSOUS ERNEST
CPC classification number: B41J2/1628 , B41J2/162 , B41J2/1629 , B41J2/1631 , B41J2002/14475 , C03B9/33 , Y10S239/19
Abstract: Method for producing a predetermined pattern of small size fluid nozzles of identical or different geometries in crystallographically oriented monocrystalline silicon or similar material utilizing anisotropic etching through the silicon to an integral etch resistant barrier layer heavily doped with P type impurities.
Abstract translation: 用于在晶体取向的单晶硅或类似材料中制造具有相同或不同几何形状的小尺寸流体喷嘴的预定图案的方法,利用通过硅的各向异性蚀刻到重掺杂有P型杂质的整体耐蚀刻阻挡层。
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公开(公告)号:CA1089912A
公开(公告)日:1980-11-18
申请号:CA270285
申请日:1977-01-24
Applicant: IBM
Inventor: BASSOUS ERNEST , KUHN LAWRENCE
Abstract: CHARGE ELECTRODE ARRAY AND COMBINATION FOR INK JET PRINTING AND METHOD OF MANUFACTURE of the Invention A charge electrode array for use in an ink jet printing apparatus is formed by anisotropic etching of apertures through a single crystal silicon substrate of (110) orientation. Conductive diffusion layers in the walls of and adjacent to the apertures permit a charge to be placed on a jet stream passing through the apertures. Contacts can be formed on the adjacent diffusion layers to provide connection to an externally located charging circuit or the contacts may be omitted when the charging circuit is formed in the substrate itself and connected by diffusion or a metal layer to each adjacent diffusion layer. Jet nozzles and synchronization electrodes are shown incorporated in the charge electrode array to form a monolithic structure capable of performing a plurality of functions. Substrate contacts are also provided for biasing.
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公开(公告)号:FR2372904A1
公开(公告)日:1978-06-30
申请号:FR7729874
申请日:1977-09-28
Applicant: IBM
Inventor: BASSOUS ERNEST , LIU CHENG-YIH
IPC: C23F1/10 , H01L21/308 , H01L21/3213 , C23G1/00 , H01L21/306
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公开(公告)号:FR2339493A1
公开(公告)日:1977-08-26
申请号:FR7639686
申请日:1976-12-22
Applicant: IBM
Inventor: BASSOUS ERNEST , KUHN LAWRENCE
IPC: B41J2/16 , B41J2/085 , B41J2/09 , G01D15/18 , G06K15/10 , H04N1/034 , B41J3/04 , B05B5/00 , H01L23/48
Abstract: A charge electrode array for use in an ink jet printing apparatus is formed by anisotropic etching of apertures through a single crystal silicon substrate of (110) orientation. Conductive diffusion layers in the walls of and adjacent to the apertures permit a charge to be placed on a jet stream passing through the apertures. Contacts can be formed on the adjacent diffusion layers to provide connection to an externally located charging circuit or the contacts may be omitted when the charging circuit is formed in the substrate itself and connected by diffusion or a metal layer to each adjacent diffusion layer. Jet nozzles and synchronization electrodes are shown incorporated in the charge electrode array to form a monolithic structure capable of performing a plurality of functions. Substrate contacts are also provided for biasing.
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公开(公告)号:DE69107779D1
公开(公告)日:1995-04-06
申请号:DE69107779
申请日:1991-09-03
Applicant: IBM
Inventor: BASSOUS ERNEST , PATTON GARY L , STORK JOHANNES M C
IPC: H01L29/73 , H01L21/205 , H01L21/331 , H01L29/10 , H01L29/732 , H01L29/737
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公开(公告)号:DE2602263A1
公开(公告)日:1976-07-29
申请号:DE2602263
申请日:1976-01-22
Applicant: IBM
Inventor: BASSOUS ERNEST , KUHN LAWRENCE , REISMAN ARNOLD , TAUB HOWARD H
Abstract: In an ink jet printing system, a single nozzle or an array of nozzles are etched in a semiconductor material such as silicon. Each nozzle has polygonal or N-sided entrance and exit apertures of different cross-sectional area. Preferably, the nozzle is in the shape of a truncated pyramid with the entrance and exit apertures being substantially square in cross-section. The corners of the apertures and wall interfaces may be rounded to reduce stress concentrations.
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公开(公告)号:DE2555462A1
公开(公告)日:1976-07-08
申请号:DE2555462
申请日:1975-12-10
Applicant: IBM
Inventor: BASSOUS ERNEST
Abstract: Method for producing a predetermined pattern of small size fluid nozzles of identical or different geometries in crystallographically oriented monocrystalline silicon or similar material utilizing anisotropic etching through the silicon to an integral etch resistant barrier layer heavily doped with P type impurities.
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8.
公开(公告)号:DE3274301D1
公开(公告)日:1987-01-02
申请号:DE3274301
申请日:1982-05-24
Applicant: IBM
Inventor: ALTMAN CARL , BASSOUS ERNEST , OSBURN CARLTON M , PLESHKO PETER , REISMAN ARNOLD , SKOLNIK MARVIN B
Abstract: A mirror array light valve comprises a plurality of closely adjacent mirror elements (23) each supported by an individual one of a plurality of post members (19p) disposed in a regular array on a transparent substrate (10). The post members (19p) support the mirror elements (23) under corresponding corners thereof so that all the mirror elements are deflectable in the same direction thereby causing light reflected by the mirror elements to be directed to a single quadrant. The post members are preferably hollow straight- sided cylindrical silicon dioxide structures produced by a self-limiting etching process.
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9.
公开(公告)号:DE2965709D1
公开(公告)日:1983-07-28
申请号:DE2965709
申请日:1979-04-23
Applicant: IBM
Inventor: BASSOUS ERNEST , NING TAK HUNG , OSBURN CARLTON MORRIS
IPC: H01L21/033 , H01L21/265 , H01L21/336 , H01L21/8247 , H01L29/10 , H01L29/78 , H01L29/788 , H01L29/792
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公开(公告)号:DE2962742D1
公开(公告)日:1982-06-24
申请号:DE2962742
申请日:1979-12-04
Applicant: IBM
Inventor: BASSOUS ERNEST , EPHRATH LINDA MERO
IPC: C23F4/00 , G03F1/20 , H01L21/302 , H01L21/3065 , C23F1/02 , B23P1/00 , C23C15/00
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