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公开(公告)号：JPH098447A
公开(公告)日：1997-01-10
申请号：JP14470596
申请日：1996-06-06
Applicant: IBM
IPC: H01L21/60 , H01L23/485 , H05K1/14 , H05K3/34
Abstract: PROBLEM TO BE SOLVED: To manufacture an organic laminated circuit card for direct chip mounting by a method wherein a device carrier is electrically connected with a device through a solder ball having a cap, which consists of a low-melting point material which forms an eutectic alloy. SOLUTION: A solder ball 38 is fixed on a ball limiting metallized layer 48. An internal metal wiring 32 conducts the electrical connection between an IC chip 30 and a cap 41. The low-melting point metal cap 41 consists of one kind of a metal selected from a group consisting of bismuth, indium, tin or their alloy. The ball 38 consists of one kind of an alloy selected from a group consisting of a high-melting point solder and a low-melting point solder or C4. It is necessary that the material for the cap 41 is a metal which forms an eutectic alloy. After the chip 30 having the cap 41 on the ball 38 is fixed on a circuit card, the chip 41 is reflowed to form the eutective alloy and the ball 38 is bonded to a copper wiring 20.
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公开(公告)号：DE68907658D1
公开(公告)日：1993-08-26
申请号：DE68907658
申请日：1989-04-25
Applicant: IBM
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3.发明专利
公开(公告)号：DE2860169D1
公开(公告)日：1980-12-18
申请号：DE2860169
申请日：1978-07-27
Applicant: IBM
Inventor： DALAL HORMAZDYAR MINOCHER , GHAFGHAICHI MAJID , KASPRZAK LUCIAN ALEXANDER , WIMPFHEIMER HANS
IPC: H01L21/768 , H01L21/28 , H01L21/285 , H01L21/338 , H01L21/60 , H01L23/532 , H01L29/43 , H01L29/45 , H01L29/47 , H01L29/872 , H01L29/40 , H01L23/48
Abstract: A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.
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公开(公告)号：ES2044199T3
公开(公告)日：1994-01-01
申请号：ES89480066
申请日：1989-04-25
Applicant: IBM
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公开(公告)号：IT1165434B
公开(公告)日：1987-04-22
申请号：IT2813179
申请日：1979-12-18
Applicant: IBM
Inventor： DALAL HORMAZDYAR MINOCHER , PATNAIK BISWESWAR , SARKARY HOMI GUSTADJI
IPC: H01L21/3213 , H01L21/768 , H01L23/522 , H05K3/46 , H01L
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Patent Agency Ranking6.发明专利
公开(公告)号：DE2966841D1
公开(公告)日：1984-04-26
申请号：DE2966841
申请日：1979-12-10
Applicant: IBM
Inventor： DALAL HORMAZDYAR MINOCHER , PATNAIK BISWESWAR , SARKARY HOMI GUSTADJI
IPC: H01L21/3213 , H01L21/768 , H01L23/522 , H05K3/46 , H01L21/90 , H01L23/52 , H05K3/00
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公开(公告)号：SG53104A1
公开(公告)日：1998-09-28
申请号：SG1997003744
申请日：1997-10-14
Applicant: IBM
Inventor： DALAL HORMAZDYAR MINOCHER , FALLON KENNETH MICHAEL , GAUDENZI GENE JOSEPH , MILKOVICH CYNTHIA SUSAN
IPC: H01L21/56 , H01L21/60 , H01L23/498 , H01L23/538 , H05K1/18 , H05K3/00 , H05K3/34
Abstract: A structure and method is disclosed for directly attaching a device or package on flexible organic circuit carriers having low cost and high reliability. IC chips with a new solder interconnect structure, comprised of a layer of pure tin, deposited on the top of high melting Pb-Sn solder balls are employed for joining. These methods, techniques and metallurgical structures enables direct attachment of electronic devices of any complexity to any substrate and to any level of packaging hierarchy. Also, devices or packages having other joining technologies, eg. SMT, BGA, TBGA, etc. could be joined onto the flexible circuit carrier.
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公开(公告)号：DE68907658T2
公开(公告)日：1994-02-17
申请号：DE68907658
申请日：1989-04-25
Applicant: IBM
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公开(公告)号：BR8903107A
公开(公告)日：1990-02-06
申请号：BR8903107
申请日：1989-06-26
Applicant: IBM
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公开(公告)号：DE3277789D1
公开(公告)日：1988-01-14
申请号：DE3277789
申请日：1982-06-23
Applicant: IBM
Inventor： DALAL HORMAZDYAR MINOCHER , LOWNEY JOHN JOSEPH
IPC: C23C14/04 , H01L21/027 , H01L21/28 , H01L21/285 , H01L21/306 , H01L29/47 , H01L29/872 , H01L21/00 , H01L21/443
Abstract: A method for making low barrier Schottky devices by the electron beam evaporation of a reactive metal such as tantalum, titanium, hafnium, tungsten, molybdenum, and niobium which is selectively deposited at a semiconductor surface such as n-type silicon using a photoresist mask. The method includes a series of steps during the deposition of the barrier metal for degassing the semiconductor substrate (9), photoresist mask (25), reactive metal charge (17) and deposition chamber (2). The method may include steps for preliminarily degassing the substrate, mask and surrounding chamber (3) by infrared heating under vacuum, followed by steps for preliminarily degassing the charge and surrounding chamber (4), while the substrate and mask are shielded, by electron beam heating the charge while under vacuum. Thereafter, and prior to deposition, the substrate and mask can be finally degassed by irradiation with X-rays (31) produced by electron beam heating the charge to a temperature below evaporation for a predetermined time under vacuum. Upon further heating of the charge, the barrier metal is evaporated and deposited at the semiconductor substrate surface.
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