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公开(公告)号:JP2000026163A
公开(公告)日:2000-01-25
申请号:JP5559399
申请日:1999-03-03
Applicant: IBM
Inventor: DAVID LAWRENCE DANIEL , KNICKERBOCKER SARAH HUFFSMITH
IPC: H05K1/03 , C04B35/00 , C04B35/495 , C04B35/628 , H01L23/15
Abstract: PROBLEM TO BE SOLVED: To obtain a ceramic material having a low dielectric constant, a coefft. of thermal expansion equal to that of silicon and high mechanical strength by forming a substrate using ceramic particles coated with borosilicate glass having a specified compsn. by a sol-gel process and a binder and sintering the substrate. SOLUTION: Ceramic particles are uniformly coated with a borosilicate glass by a sol-gel process. The compsn. of the glass consists of 10-30 wt.% B2O3,
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公开(公告)号:DE68908470D1
公开(公告)日:1993-09-23
申请号:DE68908470
申请日:1989-03-14
Applicant: IBM
Inventor: ANDERSON HERBERT RUDOLPH , BOOTH RICHARD BENTON , DAVID LAWRENCE DANIEL , NEISSER MARK OLIVER , SACHDEV HARBANS SINGH , TAKACS MARK ANTHONY
IPC: H01L23/373 , C09K5/08 , F28F13/00 , C09K5/00
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公开(公告)号:DE3781428T2
公开(公告)日:1993-04-01
申请号:DE3781428
申请日:1987-02-11
Applicant: IBM
Inventor: DAVID LAWRENCE DANIEL
IPC: C03C3/085 , C03B8/02 , C03B19/12 , C03B20/00 , C03C3/091 , C03C3/097 , C03C10/00 , C03C10/08 , C04B35/195 , C04B35/626
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公开(公告)号:DE68908470T2
公开(公告)日:1994-03-17
申请号:DE68908470
申请日:1989-03-14
Applicant: IBM
Inventor: ANDERSON HERBERT RUDOLPH , BOOTH RICHARD BENTON , DAVID LAWRENCE DANIEL , NEISSER MARK OLIVER , SACHDEV HARBANS SINGH , TAKACS MARK ANTHONY
IPC: H01L23/373 , C09K5/08 , F28F13/00 , C09K5/00
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公开(公告)号:DE3780573D1
公开(公告)日:1992-08-27
申请号:DE3780573
申请日:1987-10-13
Applicant: IBM
Inventor: DAVID LAWRENCE DANIEL , ANDERSON RONALD MAURICE
IPC: C01G25/02
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公开(公告)号:BR8803503A
公开(公告)日:1989-01-31
申请号:BR8803503
申请日:1988-07-12
Applicant: IBM
Inventor: DAVID LAWRENCE DANIEL
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公开(公告)号:DE69024263D1
公开(公告)日:1996-02-01
申请号:DE69024263
申请日:1990-03-07
Applicant: IBM
Inventor: CARR JEFFREY WILLIAM , DAVID LAWRENCE DANIEL , GUTHRIE WILLIAM LESLIE , KAUFMAN FRANK BENJAMIN , PATRICK WILLIAM JOHN , RODBELL KENNETH PARKER , PASCO ROBERT WILLIAM , NENADIC ANTON
IPC: C09G1/02 , H01L21/306 , H01L21/48 , H01L21/302
Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.
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