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    PROCESS FOR MANUFACTURING PRINTED CIRCUITS WITH METALLIC CONDUCTOR PATTERNS EMBEDDED IN THE ISOLATING SUBSTRATE
    2.
    发明专利
    PROCESS FOR MANUFACTURING PRINTED CIRCUITS WITH METALLIC CONDUCTOR PATTERNS EMBEDDED IN THE ISOLATING SUBSTRATE 未知

    公开(公告)号：DE3373256D1

    公开(公告)日：1987-10-01

    申请号：DE3373256

    申请日：1983-05-19

    Applicant: IBM DEUTSCHLAND ,  IBM

    Inventor： GRESCHNER JOHANN DR DIPL PHYS ,  SCHWERDT FRIEDRICH ,  TRUMPP HANS JOACHIM DR DIPL PH

    IPC: H05K3/42 ,  H05K3/00 ,  H05K3/02 ,  H05K3/04 ,  H05K3/10 ,  H05K3/16 ,  H05K3/24 ,  H05K3/40

    Abstract: A process for producing printed circuit boards having metallic conductor structures embedded in the insulating substrate and whose front and back sides are conductively connected by means of plated through holes. The first steps of the process comprise producing a matrix on an epoxy resin substrate consisting of a lift-off layer, an aluminum barrier layer and a positive photoresist layer. A negative image of the desired conductor pattern is then generated in the photoresist layer using conventional photolithographic techniques. The negative image is etched into the barrier layer and the lift-off layer such that an undercut occurs under the barrier layer. Subsequently, vertical trenches are etched into the epoxy resin substrate. After drilling of the through holes, an activating layer of copper is deposited by means of magnetic field enhanced cathode sputtering on the surfaces of the trenches, the through holes and the barrier layer. The lift-off layer, together with the barrier layer covering it, is removed by immersion in a suitable solvent, and copper conductors are subsequently grown in the etched conductor trenches.

    6.
    发明专利
    未知

    公开(公告)号：DE68903950T2

    公开(公告)日：1993-07-01

    申请号：DE68903950

    申请日：1989-08-16

    Applicant: IBM

    Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR DIPL PHYS ,  WEISS HELGA ,  WOLTER OLAF DR DIPL PHYS ,  WICKRAMASINGHE DIPL-PHYS DR ,  MARTIN DIPL-PHYS DR

    IPC: G01B7/34 ,  G01B21/30 ,  G01N27/00 ,  G01Q10/04 ,  G01Q60/04 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/10 ,  H01J37/28 ,  H01L21/00 ,  H01L21/66

    Abstract: A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising: 1. providing a silicon substrate and applying a silicon dioxide layer thereto; 2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching; 3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate; 4. thinning the shaft and forming a base by isotropic wet etching; and 5. removing the mask by etching. The resulting tip shaft with a rectangular end may be pointed by argon ion milling. In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.

    10.
    发明专利
    未知

    公开(公告)号：DE68903950D1

    公开(公告)日：1993-01-28

    申请号：DE68903950

    申请日：1989-08-16

    Applicant: IBM

    Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR DIPL PHYS ,  WEISS HELGA ,  WOLTER OLAF DR DIPL PHYS ,  WICKRAMASINGHE DIPL-PHYS DR ,  MARTIN DIPL-PHYS DR

    IPC: G01B7/34 ,  G01B21/30 ,  G01N27/00 ,  G01Q10/04 ,  G01Q60/04 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/10 ,  H01J37/28 ,  H01L21/00 ,  H01L21/66

    Abstract: A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising: 1. providing a silicon substrate and applying a silicon dioxide layer thereto; 2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching; 3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate; 4. thinning the shaft and forming a base by isotropic wet etching; and 5. removing the mask by etching. The resulting tip shaft with a rectangular end may be pointed by argon ion milling. In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.

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