公开(公告)号：JPH1025359A

公开(公告)日：1998-01-27

申请号：JP8623697

申请日：1997-04-04

Applicant: IBM

Inventor： JEFFREY CURTIS HEDRICK ,  JAMES LUPTON HEDRICK ,  YUN C RYAO ,  ROBERT DENIS MILLER ,  TAA YUAN SHII

IPC: C08J9/00 ,  C08J9/26 ,  H05K1/03

Abstract: PROBLEM TO BE SOLVED: To obtain a cellular polymer capable of having extremely small and uniformly dispersed fine pores and suitable for using as an electronic part by performing a reaction comprising three steps by using a precursor of a polysiloxane and heat decomposable particles. SOLUTION: This cellular polysiloxane polymer is obtained by (A) dispersing heat decomposable particles in a polysiloxane precursor, then (B) forming a hard polysiloxane by polymerizing (and preferably crosslinking) the polysiloxane precursor without decomposing the particles, and (C) heating the polysiloxane to decompose to particles without expanding the polysiloxane. Further, the above particles preferably contain a polymethyl methacrylate. The pore diameter of the obtain cellular material is preferably and approximately 1-10μm. Thus, the fine pores are uniformly dispersed in the bulk of the polymer, and the pore diameter can be adjusted by changing the size of the heat decomposable particles.

公开(公告)号：SG97159A1

公开(公告)日：2003-07-18

申请号：SG200004133

申请日：2000-07-24

Applicant: IBM

Inventor： STEPHAN A COHEN ,  CLAUDIUS FEGER ,  JEFFREY CURTIS HEDRICK ,  JANE MARGARET SHAW

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/20 ,  H01L21/314 ,  H01L23/532 ,  H01L29/51 ,  H01L23/58 ,  H01L23/48

Abstract: An interlayer dielectric for preventing Cu ion migration in semiconductor structure containing a Cu region is provided. The interlayer dielectric of the present invention comprises a dielectric material that has a dielectric constant of 3.0 or less and an additive which is highly-capable of binding Cu ions, yet is soluble in the dielectric material. The presence of the additive in the low k dielectric allows for the elimination of conventional inorganic barrier materials such as SiO2 or Si3N4.

公开(公告)号：SG106653A1

公开(公告)日：2004-10-29

申请号：SG200107687

申请日：2001-12-11

Applicant: IBM

Inventor： TIMOTHY JOSEPH DALTON ,  STEPHEN EDWARD GRECO ,  JEFFREY CURTIS HEDRICK ,  SATYANARAYANA V NITTA ,  SAMPATH PURUSHOTHAMAN ,  KENNETH PARKER RODBELL ,  ROBERT ROSENBERG

IPC: H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L23/532

Abstract: A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus forming a dielectric material that has a low dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.