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公开(公告)号:EP1719181A4
公开(公告)日:2010-08-25
申请号:EP04702191
申请日:2004-01-14
Applicant: IBM
Inventor: ANGYAL MATTHEW , HICHRI HABIB , LEE JIA , MCHERRON DALE , NYE HENRY A III
IPC: H01L29/00 , C23C16/40 , C23C16/455 , H01L21/316
CPC classification number: H01L21/31633 , C23C16/401 , C23C16/45523 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274
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公开(公告)号:CA2368950A1
公开(公告)日:2000-11-30
申请号:CA2368950
申请日:2000-05-15
Applicant: IBM
Inventor: MCGAHAY VINCENT , NYE HENRY A III , OTTEY BRIAN G R , EDELSTEIN DANIEL C , PRICE WILLIAM H
IPC: H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/485 , H01L23/532
Abstract: A structure comprising a layer of copper (1), a barrier layer (10), a layer of AlCu (9), and a pad-limiting layer (7), wherein the layer of AlCu and barrie r layer are interposed between the layer of copper and pad-limiting layer.
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公开(公告)号:MY119966A
公开(公告)日:2005-08-30
申请号:MYPI20010319
申请日:2001-01-23
Applicant: IBM
Inventor: NYE HENRY A III , MCGAHAY VINCENT J , TALLMAN KURT A
IPC: H01L21/4763 , H01L21/3205 , H01L23/52 , H01L21/768 , H01L21/77 , H01L23/00 , H01L23/58
Abstract: A COPPER-INTERCONNECT (126, 136, 146), LOW-K DIELECTRIC (10) INTEGRATED CIRCUIT HAS REDUCED CORROSION OF THE INTERCONNECT WHEN THE CRACKSTOP (2) NEXT TO THE KERF IS ALSO USED AS THE PRIMACY BARRIER TO OXYGEN DIFFUSION THROUGH THE DIELECTRIC, WITH CORRESPONDING ELEMENTS (112, 122, 132, 142) OF THE CRACKSTOP BEING CONSTRUCTED SIMULTANEOUSLY WITH THE CIRCUIT INTERCONNECT ELEMENTS; E.G. HORIZONTAL INTERCONNECT ELEMENTS HAVE A CORRESPONDING STRUCTURE IN THE CRACKSTOP AND VIAS BETWEEN INTERCONNECT LAYERS HAVE CORRESPONDING STRUCTURES IN THE CRACKSTOP.
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公开(公告)号:CA2368950C
公开(公告)日:2012-10-02
申请号:CA2368950
申请日:2000-05-15
Applicant: IBM
Inventor: EDELSTEIN DANIEL C , MCGAHAY VINCENT , NYE HENRY A III , OTTEY BRIAN G R , PRICE WILLIAM H
IPC: H01L23/485 , H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/532
Abstract: A structure comprising a layer of copper (1), a barrier layer (10), a layer of AlCu (9), and a pad-limiting layer (7), wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.
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公开(公告)号:MY118419A
公开(公告)日:2004-10-30
申请号:MYPI20001978
申请日:2000-05-08
Applicant: IBM
Inventor: EDELSTEIN DANIEL CHARLES , MCGAHAY VINCENT , NYE HENRY A III , OTTEY BRIAN R , PRICE WILLIAM H
IPC: H01L21/4763 , H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/485
Abstract: A STRUCTURE COMPRISING A LAYER OF COPPER, A BARRIER LAYER, A LAYER OF ALCU, AND A PAD-LIMITING LAYER, WHEREIN THE LAYER OF ALCU AND BARRIER LAYER ARE INTERPOSED BETWEEN THE LAYER OF COPPER AND PAD-LIMITING LAYER. (FIGURE 2)
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