公开(公告)号：JPH11224936A

公开(公告)日：1999-08-17

申请号：JP29838198

申请日：1998-10-20

Applicant: IBM

Inventor： PETER RICHARD DANKOOMU ,  HUMMEL JOHN P ,  LAIBOWITZ ROBERT BENJAMIN ,  DEBORAH AN NEWMEYER ,  KATRINE LIN ZENGER ,  SCHROTT ALEJANDRO GABRIEL

IPC: H01L21/8247 ,  C23C8/12 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a method for improving adhesion and interfacial characteristics between a noble metal part and a high-permeability film by exposing a surface of a noble-metal substrate to oxygen-containing energy and forming a noble-metal oxide film. SOLUTION: One of or a combination of high-density microwave, high-frequency plasma, ion collisions due to oxygen-containing ion beam is selected as an oxygen-containing energy source, and the energy source is used with or without a substrate bias under separate control. The noble metal is selected from among at least on of Pt, Ir, Au, Os, Ag, Pd, Rh and Ru, or selected from among a noble metal alloy of these noble metals. A noble metal oxide film 36 is formed on a noble-metal substrate 34, by exposing a surface of the substrate 34 to the oxygen containing energy source. The oxide layer thickness is normally in a range of 0.4 to 10 nm. In addition, the surface of the noble- metal substrate 34 may be exposed to the oxygen containing energy source for a sufficient time to form an interfacial reinforcement layer, and then a high-permeability material layer 38 may be deposited on the noble-metal substrate 34 with the oxygen containing layer in between.

公开(公告)号：JP2000031133A

公开(公告)日：2000-01-28

申请号：JP9833399

申请日：1999-04-06

Applicant: IBM

Inventor： EMMANUEL ISLIER COOPER ,  PETER RICHARD DANKOOMU ,  ROBERT BENJAMIN RAIBOVITZ ,  ROSENBERG ROBERT

IPC: H01L21/308 ,  C09K13/04 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To effect highly selective etching and cleaning by causing a perovskite oxide film to come in contact with an etchant solution containing hydrogen peroxide and an arbitrarily selected complexing agent under mild ambient or near ambient conditions. SOLUTION: A perovskite oxide film 12 is formed on the surface of a substrate 10. Then, a structure including the film 12 is etched with an etchant solution. This etchant solution contains hydrogen peroxide, and arbitrarily selected one or both of a complexing agent and a buffer. When the etchant solution contains hydrogen peroxide, the content of hydrogen peroxide in the solution is in the range of about 3-50 wt.%, with the remainder of water. The whole of the layer 12 is not removed in the etching step. The layer 12 is not removed, but thinned. Then, a conductor, such as Pt, Ir, Pd, or W is deposited on the cleaned layer 12. As a result, the conductor can be adhered onto the perovskite oxide film more strongly.

公开(公告)号：JPH10270712A

公开(公告)日：1998-10-09

申请号：JP7620198

申请日：1998-03-24

Applicant: IBM

Inventor： CHRISTOS DIMITRIOS DIMITRACOPO ,  PETER RICHARD DANKOOMU ,  BRUCE K FARMAN ,  ROBERT B LEIBOWITZ ,  DEBORAH AN NOUMAYER ,  PURUSHOTHAMAN SAMPATH

IPC: H01L29/786 ,  H01L21/336 ,  H01L51/00 ,  H01L51/05

Abstract: PROBLEM TO BE SOLVED: To allow a combination of an organic semiconductor and an inorganic gate insulation layer with a high dielectric constant by combining a thin film gate insulator with a high dielectric constant, an organic semiconductor, a metal, a conductive polymer, and a heavily doped and highly conductive material. SOLUTION: A thin film gate insulator with a high dielectric constant such as a barium strontium titanate, an organic semiconductor such as pentasene, a metal, a conductive polymer, a heavily doped and highly conductive material as gate, source, and drain electrodes, and their combination are used to form a thin film transistor. In the structure thereof, an inorganic gate insulator with a high permittivity is used together with an organic insulator such as pentasene. The insulator with a high dielectric ε is annealed at 400 deg.C and the dielectric constant of ε>=15 can be realized. Therefore, a substrate made of glass or plastic can be used. The gate electrode can be formed of heavily doped silicon substrate as a gate.