公开(公告)号：DE69014149D1

公开(公告)日：1994-12-22

申请号：DE69014149

申请日：1990-03-13

Applicant: IBM

Inventor： RODBELL KENNETH PARKER ,  TOTTA PAUL ANTHONY ,  WHITE JAMES FRANCIS

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/48 ,  H01L23/498 ,  H05K1/09 ,  H05K3/16 ,  H05K3/38 ,  H01L23/532

Abstract: A sputtered low copper concentration multilayered device interconnect metallurgy structure is disclosed herein. The interconnect metallurgy is seen to comprise a four-layer structure over an interplanar stud connection (10) surrounded by an insulator (8) to make connection to a device substrate (6). The four-layer structure consists of an intermetallic bottom layer (12 min ) typically 700 ANGSTROM thick and, in a preferred embodiment would comprise TiAl3. Above is a low percent (

公开(公告)号：DE3583056D1

公开(公告)日：1991-07-11

申请号：DE3583056

申请日：1985-03-11

Applicant: IBM

Inventor： BROWN JR ,  CURRY WAYNE JACKSON ,  DAHLKE GERHARD P ,  LUPUL FRANCIS THEODORE ,  TOTTA PAUL ANTHONY

IPC: H01L21/68 ,  C23C14/50 ,  H01L21/203 ,  H01L21/67 ,  H01L21/677 ,  H01L21/683 ,  H05K13/00 ,  H05K13/02

公开(公告)号：AU608042B2

公开(公告)日：1991-03-21

申请号：AU2096288

申请日：1988-08-11

Applicant: IBM

Inventor： GAJDA JOSEPH JOHN ,  SRIKRISHNAN KRIS VENKATRAMAN ,  TOTTA PAUL ANTHONY ,  TRUDEAU FRANCIS GEORGE

IPC: H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/52 ,  H01L23/54

公开(公告)号：MY115355A

公开(公告)日：2003-05-31

申请号：MYPI9501097

申请日：1995-04-26

Applicant: IBM

Inventor： NYE HENRY ATKINSON ,  ROEDER JEFFREY FREDERICK ,  TONG HO-MING ,  TOTTA PAUL ANTHONY

IPC: H01L23/48 ,  B23K1/20 ,  H05K3/34 ,  H01L21/60 ,  H01L23/485

Abstract: AN PROCESS AND A STRUCTURE FOR AN IMPROVED SOLDER TERMINAL IS DISCLOSED. THE IMPROVED SOLDER TERMINAL IS MADE OF A BOTTOM METALLIC ADHESION LAYER (80), A CRCU INTERMEDIATE LAYER (85) ON TOP OF THE ADHESION LAYER, A SOLDER BONDING LAYER (90) ABOVE THE CRCU LAYER AND A SOLDER TOP LAYER (120). THE ADHESION LAYER IS EITHER TIW OR TIN. A PROCESS FOR FABRICATING AN IMPROVED TERMINAL METAL CONSISTS OF DEPOSITING AN ADHESIVE METALLIC LAYER, A LAYER OF CRCU OVER THE ADHESIVE LAYER AND A LAYER OF SOLDER BONDING MATERIAL, OVER WHICH A SOLDER LAYER IS FORMED IN SELECTIVE REGIONS AND THE UNDERLYING LAYERS ARE ETCHED USING SOLDER REGIONS AS A MASK.

公开(公告)号：SG32342A1

公开(公告)日：1996-08-13

申请号：SG1995000346

申请日：1995-04-27

Applicant: IBM

Inventor： NYE HENRY ATKINSON III ,  TONG HO-MING ,  ROEDER JEFFREY FREDERICK ,  TOTTA PAUL ANTHONY

IPC: B23K35/14

公开(公告)号：MX148284A

公开(公告)日：1983-04-07

申请号：MX17045677

申请日：1977-09-02

Applicant: IBM

Inventor： KOOPMAN NICHOLAS GEORGE ,  TOTTA PAUL ANTHONY

IPC: H01L23/14 ,  H01L27/00

公开(公告)号：ES2165902T3

公开(公告)日：2002-04-01

申请号：ES95480062

申请日：1995-05-19

Applicant: IBM

Inventor： ATKINSON NYE HENRI III ,  ROEDER JEFFREY FREDERICK ,  TONG HO-MING ,  TOTTA PAUL ANTHONY

IPC: H01L21/60 ,  H01L23/485 ,  H05K3/34 ,  H01L23/532 ,  H01L23/482 ,  H01L23/488 ,  H01L23/492 ,  H01L23/498

Abstract: An process and a structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

公开(公告)号：AT209397T

公开(公告)日：2001-12-15

申请号：AT95480062

申请日：1995-05-19

Applicant: IBM

Inventor： ATKINSON NYE HENRI III ,  ROEDER JEFFREY FREDERICK ,  TONG HO-MING ,  TOTTA PAUL ANTHONY

IPC: H05K3/34 ,  H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L23/482 ,  H01L23/488 ,  H01L23/492 ,  H01L23/498

Abstract: An process and a structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

公开(公告)号：BR9502623A

公开(公告)日：1997-08-26

申请号：BR9502623

申请日：1995-05-31

Applicant: IBM

Inventor： NYE HENRY ATKINSON III ,  ROEDER JEFFREY FREDERICK ,  TONG HO-MING ,  TOTTA PAUL ANTHONY

IPC: H05K3/34 ,  H01L21/60 ,  H01L23/485 ,  H01L21/443

Abstract: An process and a structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

公开(公告)号：DE3278896D1

公开(公告)日：1988-09-15

申请号：DE3278896

申请日：1982-04-15

Applicant: IBM

Inventor： BHATTACHARYA SOMNATH ,  KOOPMAN NICHOLAS GEORGE ,  TOTTA PAUL ANTHONY

IPC: H05K1/18 ,  H01L21/60 ,  H01L23/485 ,  H01L23/48