公开(公告)号：DE3382340D1

公开(公告)日：1991-08-22

申请号：DE3382340

申请日：1983-08-02

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  JACKSON THOMAS NELSON ,  LAUX STEVEN ERIC ,  WOODALL JERRY MAC PHERSON

IPC: H01L29/80 ,  H01L21/338 ,  H01L29/772 ,  H01L29/812

Abstract: A semiconductor device employing two-dimensional space charge modulation in a semiconductor body 1 has an approximately Debye length wide ohmic contact 3 and a rectifying contact 2 positioned within a Debye length of the contact 3. Electrical conduction between the contact 3 and a remotely positioned contact 4 is controlled by the potential applied to the rectifying contact 2.

公开(公告)号：DE3379091D1

公开(公告)日：1989-03-02

申请号：DE3379091

申请日：1983-02-01

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  WOODALL JERRY MAC PHERSON

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/338 ,  H01L29/205 ,  H01L29/76 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812 ,  H01L29/10 ,  H01L29/72

Abstract: A majority carrier ballistic conduction transistor is fabricated with a built-indifference in barrier height ( DIAMETER a, DIAMETER b) between the emitter/base and collector/base interfaces by employing surface Fermi level pinning in a crystalline structure with three coplanar regions of different semiconductor materials. The central region base 3 has a thickness of the order of the mean free path of en electron. The materials of the external regions (2, 4) are such that there is a mismatch between the crystal spacing of the external regions and the central region which causes the Fermi level of the material in the central region to be pinned in the region of the conduction band at the interfaces with the external regions and the material of the external regions is selected so that the surface Fermi level is pinned in the forbidden region. A monocrystalline structure having an emitter region (2) of GaAs, a base region (3) of InAs or W 100Ato 500Athick and a collector region (4) of GainAs provides switching in the range of 10 seconds.

公开(公告)号：DE3783162D1

公开(公告)日：1993-02-04

申请号：DE3783162

申请日：1987-05-26

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  MURAKAMI MASANORI ,  PRICE WILLIAM HENRY ,  TIWARI SANDIP ,  WOODALL JERRY MAC PHERSON ,  WRIGHT STEVEN LORENZ

IPC: H01L21/20 ,  H01L21/28 ,  H01L29/43 ,  H01L29/45 ,  H01L29/40 ,  H01L29/20

公开(公告)号：DE3584994D1

公开(公告)日：1992-02-06

申请号：DE3584994

申请日：1985-06-14

Applicant: IBM

Inventor： BINNIG GERD KARL DR ,  FEENSTRA RANDALL MEINDERT ,  HODGSON RODNEY TREVOR ,  ROHRER HEINRICH DR ,  WOODALL JERRY MAC PHERSON

IPC: H01L21/3205 ,  C23C16/04 ,  H01J37/317 ,  H01J37/32 ,  H01L21/00

Abstract: The formation of lines (2) of the order of 0,8 nanometers wide is achieved using a tunneling current through a gas (6) that changes to provide a residue that is the basis of the line (2). The tunneling current energy is tuned to the energy required to dissociate the gas (6). The radius of the tunnel tip (3) and the tip (3)-to-substrate (1) distance (S) are of the order of less than ten nanometers.

公开(公告)号：CH620287A5

公开(公告)日：1980-11-14

申请号：CH841577

申请日：1977-07-07

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  DISTEFANO THOMAS HERMAN ,  WOODALL JERRY MAC PHERSON

IPC: C02F1/14 ,  F24J2/48 ,  F24J3/02 ,  G02B5/28

公开(公告)号：DK151079C

公开(公告)日：1988-05-09

申请号：DK409377

申请日：1977-09-15

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  DISTEFANO THOMAS HERMAN ,  WOODALL JERRY MAC PHERSON

IPC: C02F1/14 ,  F24J2/48 ,  F24J2/10 ,  G02B1/10

公开(公告)号：DE2734544A1

公开(公告)日：1978-03-23

申请号：DE2734544

申请日：1977-07-30

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  DISTEFANO THOMAS HERMAN ,  WOODALL JERRY MAC PHERSON

IPC: C02F1/14 ,  F24J2/48 ,  F24J3/02

公开(公告)号：DE1274232B

公开(公告)日：1968-08-01

申请号：DEJ0034082

申请日：1967-07-07

Applicant: IBM

Inventor： RUPPRECHT HANS STEPHEN ,  WOODALL JERRY MAC PHERSON

IPC: H01L21/00 ,  H01L33/00 ,  H01S5/30 ,  H01S5/32 ,  H05B33/16

公开(公告)号：DK151079B

公开(公告)日：1987-10-26

申请号：DK409377

申请日：1977-09-15

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  DISTEFANO THOMAS HERMAN ,  WOODALL JERRY MAC PHERSON

IPC: C02F1/14 ,  F24J2/48 ,  F24J2/10 ,  G02B1/10

公开(公告)号：DE2964744D1

公开(公告)日：1983-03-17

申请号：DE2964744

申请日：1979-11-06

Applicant: IBM

Inventor： HODGSON RODNEY TREVOR ,  HOVEL HAROLD JOHN ,  WOODALL JERRY MAC PHERSON

IPC: H01L31/04 ,  H01L31/055 ,  H01L31/06