公开(公告)号：WO0165606A3

公开(公告)日：2002-02-14

申请号：PCT/DE0100617

申请日：2001-02-14

Applicant: INFINEON TECHNOLOGIES AG ,  NEIDHART THOMAS ,  SCHAEFFER CARSTEN ,  SCHAGERL GUENTER

Inventor： NEIDHART THOMAS ,  SCHAEFFER CARSTEN ,  SCHAGERL GUENTER

IPC: H01L21/265 ,  H01L21/331 ,  H01L21/336 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78

CPC classification number: H01L29/66348 ,  H01L21/26586 ,  H01L29/0847 ,  H01L29/41766 ,  H01L29/4232 ,  H01L29/4238 ,  H01L29/7397 ,  H01L29/7813

Abstract: The invention relates to a field effect transistor configuration in which the source region (6), in order to increase the latch-up strength, extends along a trench (2) and below the highly doped base region (8) in a self-adjusting manner.

Abstract translation: 本发明涉及其中增加源极区域（6）以自对准的方式沿沟槽延伸的闭锁强度等的场效应晶体管装置（2），以下面的重掺杂基区（8）。

公开(公告)号：DE10009345C1

公开(公告)日：2001-07-19

申请号：DE10009345

申请日：2000-02-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHAEFFER CARSTEN ,  SCHAGERL GUENTER ,  NEIDHART THOMAS

IPC: H01L21/265 ,  H01L21/331 ,  H01L21/336 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78

Abstract: The FET device includes a semiconductor substrate (1) with a trench (2). An insulating layer (4) covers the walls of the trench. A conductive material (5) fills the trench and forms a gate electrode. A source region (6), a body region (7) and a drain region (10) are also formed. A highly doped region (8) is formed in the body region that is at least partially arranged under the source region and adjoins the source region. The source region extends from the first surface (3) of the semiconductor substrate (1), along the trench (2) and up to the highly doped region in the body region.

公开(公告)号：DE112013004201T5

公开(公告)日：2015-06-25

申请号：DE112013004201

申请日：2013-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHAGERL GUENTER ,  KRIVEC STEFAN

IPC: G01N27/414

Abstract: Die Offenbarung beschreibt Techniken zur Bestimmung einer Ionenkonzentration in einer Probe. Eine Ionenkonzentration einer Probe ist bestimmt durch Detektieren einer Änderung einer elektrischen Eigenschaft einer Feldeffekttransistor(FET)-Halbleitervorrichtung bedingt durch eine Gate-Isolierung (60) der Halbleitervorrichtung, welche in Kontakt mit der Probe gebracht wurde.

公开(公告)号：DE102005051812A1

公开(公告)日：2007-02-01

申请号：DE102005051812

申请日：2005-10-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARFMANN MARKUS ,  BINTER ALEXANDER ,  SCHAGERL GUENTER ,  SANTOS RODRIGUEZ FRANCISCO JAV ,  PRAX EMIL ,  FATHULLA AHMAD

IPC: H01L21/306 ,  G01B11/06 ,  H01L21/66

Abstract: A device with etching equipment for etching complete layers or parts of layers to be removed from semiconductor wafers (5) with a liquid etching medium comprises a spectrometer (13) for measuring the concentration of the etching medium. Independent claims are also included for the following. (1) etching complete layers or parts of layers to be removed from semiconductor wafers; and (2) the application of a spectrometer in an etching device.