公开(公告)号：WO03096765A2

公开(公告)日：2003-11-20

申请号：PCT/US0313597

申请日：2003-05-01

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III ,  BERNEY BUTCH

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III ,  BERNEY BUTCH

IPC: H05H1/46 ,  C23C16/00 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3065 ,  H05H1/00

CPC classification number: H01J37/32477 ,  H01J37/32623

Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

Abstract translation: 公开了一种用于处理基板以在其上形成电子部件的等离子体处理室。 等离子体处理室包括在处理基板期间在等离子体处理室中具有朝向等离子体的等离子体面向表面的等离子体面向部件，等离子体面向部件与接地端子电隔离。 等离子体处理室还包括耦合到等离子体面向部件的接地装置，接地装置包括设置在等离子体面向部件和接地端子之间的第一电流路径中的第一电阻电路。 接地装置还包括设置在等离子体面向部件和接地端子之间的至少一个其它电流通路中的RF滤波器装置，其中选择第一电阻电路的电阻值以基本上消除等离子体和等离子体 - 在处理基板期间面对部件。

公开(公告)号：DE69732918D1

公开(公告)日：2005-05-04

申请号：DE69732918

申请日：1997-12-22

Applicant: LAM RES CORP

Inventor： SHUFFLEBOTHAM KEVIN ,  MCMILLIN BRIAN ,  DEMOS T ,  NGUYEN HUONG ,  BERNEY BUTCH ,  BEN-DOR MONIQUE

IPC: C23C16/40 ,  C23C16/507 ,  H01L21/316 ,  H01L21/768 ,  C23C16/50

Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

公开(公告)号：AU3145197A

公开(公告)日：1998-01-21

申请号：AU3145197

申请日：1997-06-02

Applicant: LAM RES CORP

Inventor： MCMILLIN BRIAN ,  NGUYEN HUONG ,  BARNES MICHAEL ,  BERNEY BUTCH

IPC: C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C30B25/10 ,  C30B25/14 ,  H01J37/32 ,  H01L21/205

公开(公告)号：DE69739660D1

公开(公告)日：2009-12-31

申请号：DE69739660

申请日：1997-09-30

Applicant: LAM RES CORP

Inventor： MCMILLIN BRIAN ,  BARNES MICHAEL ,  BERNEY BUTCH ,  NGUYEN HUONG

IPC: H01L21/68 ,  H01L21/683

Abstract: An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.

公开(公告)号：AU4507297A

公开(公告)日：1998-04-24

申请号：AU4507297

申请日：1997-09-30

Applicant: LAM RES CORP

Inventor： MCMILLIN BRIAN ,  BARNES MICHAEL ,  BERNEY BUTCH ,  NGUYEN HUONG

IPC: H01L21/68 ,  H01L21/683

Abstract: An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.

公开(公告)号：DE69732918T2

公开(公告)日：2006-04-13

申请号：DE69732918

申请日：1997-12-22

Applicant: LAM RES CORP

Inventor： SHUFFLEBOTHAM KEVIN ,  MCMILLIN BRIAN ,  DEMOS T ,  NGUYEN HUONG ,  BERNEY BUTCH ,  BEN-DOR MONIQUE

IPC: C23C16/40 ,  C23C16/50 ,  C23C16/507 ,  H01L21/316 ,  H01L21/768

Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

公开(公告)号：AU2003228799A8

公开(公告)日：2003-11-11

申请号：AU2003228799

申请日：2003-05-01

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  BAILEY ANDREW D III ,  HOWALD ARTHUR M ,  BERNEY BUTCH

IPC: H05H1/46 ,  C23C16/00 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3065 ,  H05H1/00

Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

公开(公告)号：AT449419T

公开(公告)日：2009-12-15

申请号：AT97943648

申请日：1997-09-30

Applicant: LAM RES CORP

Inventor： MCMILLIN BRIAN ,  BARNES MICHAEL ,  BERNEY BUTCH ,  NGUYEN HUONG

IPC: H01L21/68 ,  H01L21/683

Abstract: An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.

公开(公告)号：AT292200T

公开(公告)日：2005-04-15

申请号：AT97953209

申请日：1997-12-22

Applicant: LAM RES CORP

Inventor： SHUFFLEBOTHAM PAUL KEVIN ,  MCMILLIN BRIAN ,  DEMOS ALEX T ,  NGUYEN HUONG ,  BERNEY BUTCH ,  BEN-DOR MONIQUE

IPC: C23C16/40 ,  C23C16/507 ,  H01L21/316 ,  H01L21/768 ,  C23C16/50

Abstract: A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

公开(公告)号：AU2003228799A1

公开(公告)日：2003-11-11

申请号：AU2003228799

申请日：2003-05-01

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III ,  BERNEY BUTCH

IPC: H05H1/46 ,  C23C16/00 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3065 ,  H05H1/00

Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.