公开(公告)号：JP2001167692A

公开(公告)日：2001-06-22

申请号：JP2000317257

申请日：2000-10-18

Applicant: LUCENT TECHNOLOGIES INC

Inventor： FILAS ROBERT WILLIAM ,  JIN SUNGHO ,  GERGORY P KOCHANSKI ,  ZHU WEI

IPC: B82B1/00 ,  C01B31/02 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J23/04 ,  H01J29/04 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide an improved process of manufacturing an emitter structure from nano wires. SOLUTION: In an embodiment, at least partially coated nanowires other than magnetic materials are provided. The nanowires have an average length of about 0.1 μm to about 10,000 μm. The nanowares are mixed into a liquid medium, and a magnetic field is applied to position the nanowires. The liquid medium contains precursor materials, such as conductive particles or metal salts or the like, which can be consolidated into a solid matrix. To the matrix are fixed the nanowires in a positioned direction. A portion of the positioned nanowires is exposed, for example, by etching of the surface portion of the matrix material, thereby providing the desired protrusion of the top of the nanowires.

公开(公告)号：JP2003197901A

公开(公告)日：2003-07-11

申请号：JP2002268944

申请日：2002-09-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN ,  FILAS ROBERT WILLIAM ,  HO PETER KIAN-HOON ,  SCHON JAN HENDRIK

IPC: B82B1/00 ,  H01L21/28 ,  H01L21/336 ,  H01L23/58 ,  H01L29/06 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To fabricate a miniature FET element. SOLUTION: The device comprises a first element, a second element, and a monolayer for blocking formation of the second element on the first element wherein the first and second elements are spaced apart by the length of the monolayer. More specifically, limitation of photolithographic technology is solved to enhance the switching rate and frequency response of an FET by decreasing the isolation distance between the drain electrode and the source electrode thereby decreasing the channel width. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2001203364A

公开(公告)日：2001-07-27

申请号：JP2000362320

申请日：2000-11-29

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHANDROSS EDWIN A ,  CRONE BRIAN KEITH ,  DODABALAPUR ANANTH ,  FILAS ROBERT WILLIAM

IPC: H01L21/28 ,  H01L21/288 ,  H01L21/336 ,  H01L21/44 ,  H01L29/786 ,  H01L51/10 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor which can prolong the effective life of an organic semiconductor device. SOLUTION: A source-drain contact material adapted to an organic semiconductor in a thin film transistor integrated circuit is nickel/gold wherein nickel is plated as Ni-P on a base conductor (preferably TiNx) by electroless plating, and an upper layer of gold is deposited by substitution plating. Thus, it was unexpectedly found that the life of a TFT device is substantially prolonged by forming the Ni/Au contact.

公开(公告)号：DE60043148D1

公开(公告)日：2009-11-26

申请号：DE60043148

申请日：2000-11-06

Applicant: LUCENT TECHNOLOGIES INC

Inventor： FILAS ROBERT WILLIAM ,  LIAKOPOULOS TRIFON M ,  LOTFI ASHRAF WAGIH

IPC: H01F10/16 ,  H01L27/08 ,  H01F41/04 ,  H01F41/14 ,  H01L21/02 ,  H01L21/822 ,  H01L23/64 ,  H01L27/04

公开(公告)号：DE60039956D1

公开(公告)日：2008-10-02

申请号：DE60039956

申请日：2000-11-20

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHANDROSS EDWIN ARTHUR ,  CRONE BRIAN KEITH ,  DODABALAPUR ANANTH ,  FILAS ROBERT WILLIAM

IPC: H01L21/28 ,  H01L51/10 ,  H01L21/288 ,  H01L21/336 ,  H01L21/44 ,  H01L29/786 ,  H01L51/05 ,  H01L51/40

Abstract: The specification describes source/drain contact material that is compatible with organic semiconductors in thin film transistor integrated circuits. The contact material is nickel/gold wherein the nickel is plated as Ni-P on a base conductor, preferably TiNx, by electroless plating, and the gold overlay is deposited by displacement plating. It was found, unexpectedly, that forming Ni/Au contacts in this way extends the lifetime of TFT devices substantially.

公开(公告)号：CA2322254A1

公开(公告)日：2001-04-18

申请号：CA2322254

申请日：2000-10-04

Applicant: LUCENT TECHNOLOGIES INC

Inventor： JIN SUNGHO ,  ZHU WEI ,  KOCHANSKI GREGORY P ,  FILAS ROBERT WILLIAM

IPC: B82B1/00 ,  C01B31/02 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J23/04 ,  H01J29/04 ,  H01J31/12 ,  H01L23/00 ,  G09F9/30

Abstract: An improved process for fabricating emitter structures from nanowires, wherein the nanowires are coated with a magnetic material to allow useful alignment of the wires in the emitter array, and techniques are utilized to provide desirable protrusion of the aligned nanowires in the final structure. In one embodiment, nanowires at least partially coated by a magnetic material are provided, the nanowires having an average length of about 0.1 .mu.m to about 10,000 .mu.m. The nanowires are mixed in a liquid medium, and a magnetic field is applied to align the nanowires. The liquid medium is provided with a precursor material capable of consolidation into a solid matrix, e.g., conductive particles or a metal salt, the matrix securing the nanowires in an aligned orientation. A portion of the aligned nanowires are exposed, e.g., by etching a surface portion of the matrix material, to provide desirable nanowire tip protrusion.

公开(公告)号：AU6543000A

公开(公告)日：2001-04-26

申请号：AU6543000

申请日：2000-10-11

Applicant: LUCENT TECHNOLOGIES INC

Inventor： FILAS ROBERT WILLIAM ,  ZHU WEI ,  KOCHANSKI GREGORY PETER ,  JIN SUNGHO

IPC: B82B1/00 ,  C01B31/02 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J23/04 ,  H01J29/04 ,  H01J31/12 ,  H01J19/24