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公开(公告)号：DE69926856D1
公开(公告)日：2005-09-29
申请号：DE69926856
申请日：1999-11-25
Applicant: SONY CORP
Inventor： YAMAGUCHI TAKASHI , KOBAYASHI TOSHIMASA , KIJIMA SATORU , KOBAYASHI TAKASHI , ASATSUMA TSUNENORI , ASANO TAKEHARU , HINO TOMONORI
IPC: H01L33/06 , H01L33/12 , H01L33/32 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323 , H01S5/343 , H01L33/00
Abstract: A GaN compound semiconductor laser includes an AlGaN buried layer which buries opposite sides of a ridge stripe portion formed on a p-type AlGaN cladding layer. The AlGaN buried layer is made by first patterning an upper part of the p-type AlGaN cladding layer and a p-type GaN contact layer into a ridge stripe configuration by using a SiO2 film as an etching mask, then growing the AlGaN buried layer non-selectively on the entire substrate surface to bury both sides of the ridge stripe portion under the existence of the SiO2 film on the ridge stripe portion, and thereafter selectively removing the AlGaN buried layer from above the ridge stripe portion by etching using the SiO2 film as an etching stop layer. Thus, the GaN compound semiconductor laser is stabilized in the transverse mode, intensified in output power, and improved in lifetime.
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公开(公告)号：DE69936564T2
公开(公告)日：2008-04-03
申请号：DE69936564
申请日：1999-11-23
Applicant: SONY CORP
Inventor： HINO TOMONORI , ASANO TAKEHARU , ASATSUMA TSUNENORI , KIJIMA SATORU , FUNATO KENJI , TOMIYA SHIGETAKA
IPC: H01L21/20 , H01L21/033 , H01L33/06 , H01L33/32 , H01L33/34 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/20 , H01S5/30 , H01S5/323 , H01S5/343
Abstract: When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth mask may be combination of an oxide film and a nitride film thereon, combination of a metal film and a nitride film thereon, combination of an oxide film, a film thereon made up of a nitride and an oxide, and a nitride film thereon, or combination of a first metal film, a second metal film thereon different from the first metal film and a nitride film thereon, for example. The oxide film may be a SiO2, for example, the nitride film may be a TiN film or a SiN film, the film made up of a nitride and an oxide may be a SiNO film, and the metal film may be a Ti film or a Pt film, for example.
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公开(公告)号：DE69510129T2
公开(公告)日：1999-12-09
申请号：DE69510129
申请日：1995-07-07
Applicant: SONY CORP
Inventor： ISHIBASHI AKIRA , NAKAYAMA NORIKAZU , KIJIMA SATORU
IPC: H01L33/06 , H01L33/12 , H01L33/28 , H01L33/38 , H01L33/42 , H01S5/00 , H01S5/042 , H01S5/183 , H01S5/327 , H01S5/347 , H01L33/00 , H01S3/19
Abstract: A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer (2), n-type ZnSSe layer (3), n-type ZnMgSSe cladding layer (4), n-type ZnSSe waveguide layer (5), active layer (6), p-type ZnSSe waveguide layer (7), p-type ZnMgSSe cladding layer (8), p-type ZnSSe layer (9), p-type ZnSe contact layer (10), p-type ZnSe/ZnTe MQW layer (11) and p-type ZnTe contact layer (12), sequentially stacked on an n-type GaAs substrate (1). A grid-shaped p-side electrode (13) and a Au film (14) covering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode (15) is provided on the back surface of the n-type GaAs substrate. The active layer (6) has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.
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公开(公告)号：DE69926856T2
公开(公告)日：2006-05-18
申请号：DE69926856
申请日：1999-11-25
Applicant: SONY CORP
Inventor： YAMAGUCHI TAKASHI , KOBAYASHI TOSHIMASA , KIJIMA SATORU , KOBAYASHI TAKASHI , ASATSUMA TSUNENORI , ASANO TAKEHARU , HINO TOMONORI
IPC: H01S5/323 , H01L33/06 , H01L33/12 , H01L33/32 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/343
Abstract: A GaN compound semiconductor laser includes an AlGaN buried layer which buries opposite sides of a ridge stripe portion formed on a p-type AlGaN cladding layer. The AlGaN buried layer is made by first patterning an upper part of the p-type AlGaN cladding layer and a p-type GaN contact layer into a ridge stripe configuration by using a SiO2 film as an etching mask, then growing the AlGaN buried layer non-selectively on the entire substrate surface to bury both sides of the ridge stripe portion under the existence of the SiO2 film on the ridge stripe portion, and thereafter selectively removing the AlGaN buried layer from above the ridge stripe portion by etching using the SiO2 film as an etching stop layer. Thus, the GaN compound semiconductor laser is stabilized in the transverse mode, intensified in output power, and improved in lifetime.
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公开(公告)号：DE69936564D1
公开(公告)日：2007-08-30
申请号：DE69936564
申请日：1999-11-23
Applicant: SONY CORP
Inventor： HINO TOMONORI , ASANO TAKEHARU , ASATSUMA TSUNENORI , KIJIMA SATORU , FUNATO KENJI , TOMIYA SHIGETAKA
IPC: H01L21/20 , H01L21/033 , H01L33/06 , H01L33/32 , H01L33/34 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/20 , H01S5/30 , H01S5/323 , H01S5/343
Abstract: When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth mask may be combination of an oxide film and a nitride film thereon, combination of a metal film and a nitride film thereon, combination of an oxide film, a film thereon made up of a nitride and an oxide, and a nitride film thereon, or combination of a first metal film, a second metal film thereon different from the first metal film and a nitride film thereon, for example. The oxide film may be a SiO2, for example, the nitride film may be a TiN film or a SiN film, the film made up of a nitride and an oxide may be a SiNO film, and the metal film may be a Ti film or a Pt film, for example.
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Patent Agency Ranking
公开(公告)号：DE69510129D1
公开(公告)日：1999-07-15
申请号：DE69510129
申请日：1995-07-07
Applicant: SONY CORP
Inventor： ISHIBASHI AKIRA , NAKAYAMA NORIKAZU , KIJIMA SATORU
IPC: H01L33/06 , H01L33/12 , H01L33/28 , H01L33/38 , H01L33/42 , H01S5/00 , H01S5/042 , H01S5/183 , H01S5/327 , H01S5/347 , H01L33/00 , H01S3/19
Abstract: A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer (2), n-type ZnSSe layer (3), n-type ZnMgSSe cladding layer (4), n-type ZnSSe waveguide layer (5), active layer (6), p-type ZnSSe waveguide layer (7), p-type ZnMgSSe cladding layer (8), p-type ZnSSe layer (9), p-type ZnSe contact layer (10), p-type ZnSe/ZnTe MQW layer (11) and p-type ZnTe contact layer (12), sequentially stacked on an n-type GaAs substrate (1). A grid-shaped p-side electrode (13) and a Au film (14) covering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode (15) is provided on the back surface of the n-type GaAs substrate. The active layer (6) has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.
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公开(公告)号：JP2001267691A
公开(公告)日：2001-09-28
申请号：JP2000404035
申请日：2000-12-08
Applicant: SONY CORP
Inventor： SHIBUYA KATSUYOSHI , ASANO TAKEHARU , KIJIMA SATORU , YANASHIMA KATSUNORI , TAKEYA MOTONOBU , IKEDA MASAO , HINO TOMOKIMI , YAMAGUCHI KYOJI , IKEDA MASAAKI , GOTO OSAMU
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element and its manufacturing method for improving crystallization of nitride-based III-V group compound semiconductor on a sapphire substrate. SOLUTION: After a seed crystal layer 12 with a crystal part 12A made of nitride-based III-V group compound semiconductor crystal and an opening 12B is formed on a sapphire substrate, a recess 11B continuously joined to the opening 12B is formed in the sapphire substrate. An n-side contact layer 15 is grown from the crystal part 12A. As a result, a crystal grown sidewise from the crystal part 12A is prevented from being in contact with the sapphire substrate 11, and the n-side contact layer 15 and the nitride-based III-V group compound semiconductor crystal have a low density of through dislocation while a fluctuation in crystal orientation is made small.
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公开(公告)号：JP2000022276A
公开(公告)日：2000-01-21
申请号：JP18227698
申请日：1998-06-29
Applicant: SONY CORP
Inventor： TOMITANI SHIGETAKA , KIJIMA SATORU , OKUYAMA HIROYUKI , TANIGUCHI OSAMU , TSUKAMOTO HIRONORI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element in which defect density can be reduced in a second layer of ZnTe formed on a first layer of ZnSe through a graded composition superlattice layer. SOLUTION: An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a ZnSSe cap layer, a ZnSe cap layer 19, a graded composition superlattice layer 20 and a low defect contact layer 21 are laminated sequentially on an n-type substrate. The graded composition superlattice layer 20 is formed by laminating p-type ZnTe layers 20a, 20c, 20e, 20g, 20i and p-type ZnSe layers 20b, 20d, 20f, 20h, 20j alternately. The laminating p-type ZnTe layers 20a, 20c, 20e, 20g, 20i are formed thick on the low defect contact layer 21. Thickness of the low defect contact layer 21 is set at 5 nm or less. Since lattice strain is relaxed and defect density of the low defect contact layer 21 is reduced, operating voltage rise is suppressed immediately after current is carried and operating voltage is lowered.
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公开(公告)号：JPH11145520A
公开(公告)日：1999-05-28
申请号：JP31070397
申请日：1997-11-12
Applicant: SONY CORP
Inventor： KIJIMA SATORU , OKUYAMA HIROYUKI
IPC: G02B5/26 , G02B5/28 , H01L21/203 , H01L21/205 , H01L21/363 , H01L21/365 , H01L33/10 , H01L33/28 , H01L33/60 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element for suppressing the propagation of grating defects and for prolonging life, and its manufacturing method. SOLUTION: A first conductivity-type clad layer 4 consisting of a II-VI compound semiconductor, an active layer 6, a second conductivity-type clad layer 8 or the like are successively laminated on a substrate 1. End face films 15 and 16 are formed on a pair of surfaces that are vertical to the longer direction of a resonator. With the end face films 15 and 16, low refractive index layers 15a and 16b, consisting of at least one type out of a group consisting of CaF2 , MgF2 , and Al2 O3 and high refractive index layers 15b and 16b consisting of at least one type from among a group consisting of ZrO2 , ZnS, and Sb2 S3 are alternately laminated at least by one layer or more. By adjusting the number of laminated end face films 15 and 16, the reflection factor can be controlled.
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公开(公告)号：JPH10200211A
公开(公告)日：1998-07-31
申请号：JP339097
申请日：1997-01-10
Applicant: SONY CORP
Inventor： OKUYAMA HIROYUKI , KIJIMA SATORU
Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a compound semiconductor layer and a gas-phase growth device used for it, wherein, when a III-V compound semiconductor layer is grown on a substrate and then a II-VI compound semicon ductor layer is grown over it, a lamination defect occurring at the interface between the III-V compound semiconductor layer and II-VI compound semicon ductor layer is significantly reduced. SOLUTION: In the first growth chamber 1, a III-V compound semiconductor layer is grown on a substrate 5 by an MBE(molecular beam epitaxy) method or an MOCVD (organic metal chemical gas-phase growth) method, then the substrate 5 is transfered to the second growth chamber 2 through a transfer channel 3, and in the second growth chamber 2, a II-VI compound semiconductor layer is grown on the III-V compound semiconductor layer by the MBE method or MOCVD method. Here, the substrate 5 is kept at 300-570 deg.C, and the substrate 5 is heated to 480-570 deg.C before growth of the II-V compound semiconductor layer is started in the second growth chamber 2.
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