公开(公告)号：JP2007074727A

公开(公告)日：2007-03-22

申请号：JP2006239571

申请日：2006-09-04

Applicant: Commissariat A L'energie Atomique ,  St Microelectronics Sa ,  エスティマイクロエレクトロニクス エスエー ,  コミッサリア ア レネルジ アトミックCommissariat A L’Energie Atomique

Inventor： BOUCHE GUILLAUME ,  PARAT GUY

IPC: H03H9/17 ,  H01L41/09 ,  H01L41/187 ,  H01L41/22 ,  H03H3/02

CPC classification number: H03H9/172 ,  H03H3/02 ,  H03H9/0547

Abstract: PROBLEM TO BE SOLVED: To provide an acoustic resonator which is connected to a support of an integrated circuit, of which an architecture has minimum coarseness, and which can be made into thin film formation step of adjusting a resonant frequency. SOLUTION: The integrated circuit includes at least one interconnection level and an acoustic resonator provided with a support comprising at least one bilayer assembly comprising a layer of high acoustic impedance material and a layer of low acoustic impedance material, and an active element. The support further has a protruding element arranged on a metallization level of the interconnection level, thereby making it possible to produce an electrical contact between the interconnection level and the active element of the acoustic resonator. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种连接到集成电路的支撑件的声谐振器，其结构具有最小的粗糙度，并且可以制成调整谐振频率的薄膜形成步骤。 解决方案：集成电路包括至少一个互连级别和声学谐振器，该谐振器设置有包括至少一个双层组件的支撑件，该组合件包括高声阻抗材料层和低声阻抗材料层以及有源元件。 支撑件还具有布置在互连电平的金属化水平上的突出元件，从而使得可以在互连电平和声谐振器的有源元件之间产生电接触。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006041527A

公开(公告)日：2006-02-09

申请号：JP2005214403

申请日：2005-07-25

Applicant: Commissariat A L'energie Atomique ,  St Microelectronics Sa ,  エスティマイクロエレクトロニクス エスエー ,  コミッサリア ア レネルジ アトミックCommissariat A L’Energie Atomique

Inventor： BOUCHE GUILLAUME ,  ANCEY PASCAL ,  VIALA BERNARD ,  COUDERC SANDRINE

IPC: H01F41/18 ,  C21D8/12 ,  C22C38/00 ,  C23C8/38 ,  C23C14/34 ,  H01F10/00 ,  H01F10/13 ,  H01F10/14 ,  H01F10/32 ,  H01F17/00 ,  H01F41/30 ,  H01L23/552

CPC classification number: H01F41/301 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/007 ,  H01F10/136 ,  H01F10/138 ,  H01F10/147 ,  H01F10/3227 ,  H01F41/18 ,  H01F41/302 ,  H01L23/552 ,  H01L2924/0002 ,  Y10T428/256 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a soft magnetic thin film having high magnetization and insulation characteristics. SOLUTION: The method comprises the steps of nitriding an Fe-rich ferromagnetic nano particle immersed in an amorphous substrate and selectively oxidizing the amorphous substrate. The invention relates to a highly-magnetic and insulating soft magnetic thin film obtained by this method. The invention proposes an integrated circuit comprising a component, using a membrane incorporating the thin film obtained by this method. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供一种形成具有高磁化强度和绝缘特性的软磁性薄膜的方法。 解决方案：该方法包括以下步骤：浸没在非晶衬底中的富Fe铁磁纳米颗粒并选择性地氧化非晶衬底。 本发明涉及通过该方法获得的高磁性和绝缘软磁薄膜。 本发明提出了一种使用包含通过该方法获得的薄膜的膜的组件的集成电路。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2003031611A

公开(公告)日：2003-01-31

申请号：JP2002142521

申请日：2002-05-17

Applicant: St Microelectronics Sa ,  エスティマイクロエレクトロニクス エスエー

Inventor： VARROT MICHEL ,  BOUCHE GUILLAUME ,  GONELLA ROBERTO ,  SABOURET ERIC

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/85051 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  Y10S257/92 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

Abstract: PROBLEM TO BE SOLVED: To provide the configuration of a connecting pad to minimize and remove the risk of peeling of a layer and a fine crack. SOLUTION: The integrated circuit comprises a plurality of metallization levels and connecting pads. Each connecting pad PLC is allocated in the highest metallization level. On the upper surface of the connecting pad, a metal layer CMS of the highest metallization level including an area for welding a connecting wire, at least one noncontinuous metal layer CMD4 in the lowest metallization level next to the above layer, a metal via VS connecting the non-continuous metal layer at the lower surface of the metal layer in the highest metallization level, and an insulation cover OX covering the non-continuous metal layer and the non-continuous part in addition to the inter-via between two metal layers, are respectively provided. Moreover, a reinforcing configuration STR is also included under a coupled region.

Abstract translation: 要解决的问题：提供连接垫的结构，以最小化并消除层剥离和细裂纹的风险。 解决方案：集成电路包括多个金属化层和连接焊盘。 每个连接焊盘PLC分配在最高的金属化级别。 在连接焊盘的上表面上，包括用于焊接连接线的区域的最高金属化水平的金属层CMS，与上述层相邻的最低金属化水平中的至少一个非连续金属层CMD4，金属通孔VS连接 在最高金属化水平的金属层的下表面处的非连续金属层和除了两个金属层之间的通孔之外覆盖非连续金属层和非连续部分的绝缘盖OX， 分别提供。 此外，加强配置STR也包括在耦合区域下。

公开(公告)号：JP2003124228A

公开(公告)日：2003-04-25

申请号：JP2002219447

申请日：2002-07-29

Applicant: ST MICROELECTRONICS SA

Inventor： MENUT OLIVIER ,  JAOUEN HERVE ,  BOUCHE GUILLAUME

IPC: H01L21/28 ,  H01L21/265 ,  H01L21/331 ,  H01L21/338 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/732 ,  H01L29/812

Abstract: PROBLEM TO BE SOLVED: To provide a method for simultaneously manufacturing a bipolar transistor and a MOS transistor in an integrated circuit. SOLUTION: There is provided a method for forming a contact between a semiconductor substrate and a doped polysilicon layer deposited on the substrate via an insulating layer. In the method, there is injected an element which makes transparent the insulating layer for the movement of a dopant to the substrate from the polysilicon layer.

公开(公告)号：FR2890229B1

公开(公告)日：2007-11-09

申请号：FR0552645

申请日：2005-08-31

Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

Inventor： BOUCHE GUILLAUME ,  CASSET FABRICE ,  ANCEY PASCAL

IPC: H01G5/16 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01L29/92

公开(公告)号：DE60306196D1

公开(公告)日：2006-07-27

申请号：DE60306196

申请日：2003-11-27

Applicant: ST MICROELECTRONICS SA

Inventor： BOUCHE GUILLAUME ,  CARUYER GREGORY ,  ANCEY PASCAL

IPC: H03H9/05 ,  H01L23/14 ,  H01L27/20 ,  H01L41/04 ,  H03H9/17 ,  H03H9/58

公开(公告)号：FR2854726B1

公开(公告)日：2005-08-26

申请号：FR0305649

申请日：2003-05-09

Applicant: ST MICROELECTRONICS SA

Inventor： BOUCHE GUILLAUME ,  SAIAS DANIEL

IPC: H01H59/00 ,  H01H61/02 ,  H01H13/22

Abstract: A multiposition microswitch that includes a cavity, a mobile portion made of a deformable material extending above the cavity, at least three conductive tracks extending on the cavity bottom, and a contact pad on the lower surface of the mobile part. The mobile part is capable of deforming, under the action of a stressing mechanism, from an idle position where the contact pad is distant from the conductive tracks to an on position from among several distinct on positions. The contact pad electrically connects, in each distinct on position, at least two of the at least three conductive tracks, at least one of the conductive tracks connected to the contact pad in each distinct on position being different from the conductive tracks connected to the contact pad in the other distinct on positions.

公开(公告)号：FR2848339B1

公开(公告)日：2005-08-26

申请号：FR0215370

申请日：2002-12-05

Applicant: ST MICROELECTRONICS SA

Inventor： BOUCHE GUILLAUME ,  ANCEY PASCAL ,  FROMENT BENOIT

IPC: B81B7/00 ,  H01S5/022 ,  H01L23/31 ,  B81C3/00

Abstract: The adhesion of a first element (1), of which at least a part of the surface is coated with silicon, on a second element (2), of which at least a part of the surface is coated with nickel, incorporates an adhesion stage effected by NiSi welding at greater than 250degreesC, the rugosity between the two parts of the surface of the two elements being less than 1 micron. An Independent claim is also included for an integrated circuit incorporating two elements joined by NiSi welding.

公开(公告)号：FR2848036B1

公开(公告)日：2005-08-26

申请号：FR0214967

申请日：2002-11-28

Applicant: ST MICROELECTRONICS SA

Inventor： BOUCHE GUILLAUME ,  CARUYER GREGORY ,  ANCEY PASCAL

IPC: H01L23/14 ,  H01L27/20 ,  H01L41/04 ,  H03H9/05 ,  H03H9/17 ,  H03H9/58

公开(公告)号：FR2853473B1

公开(公告)日：2005-07-01

申请号：FR0304039

申请日：2003-04-01

Applicant: ST MICROELECTRONICS SA

Inventor： BOUCHE GUILLAUME ,  SMEARS NICK ,  ANCEY PASCAL ,  CARUYER GREGORY

IPC: H01L27/20 ,  H03H9/15 ,  H03H9/58

Abstract: The electronic component has two resonators (3, 4) that are disposed on an upper surface of a silicon substrate. Each resonator has a lower electrode in contact with the upper surface, a piezoelectric active component disposed on the lower electrode and an upper electrode disposed on the active component. The respective lower electrodes are made of aluminum and molybdenum, to obtain frequencies at different resonance. Independent claims are also included for the following (a) an integrated circuit including the electronic component (b) a hybrid circuit including the electronic component (c) a filter comprising a electronic component (d) a process of fabrication of the electronic component.