公开(公告)号：WO2008089969A2

公开(公告)日：2008-07-31

申请号：PCT/EP2008/000495

申请日：2008-01-23

Applicant: STMICROELECTRONICS S.R.L. ,  BALDO, Lorenzo ,  COMBI, Chantal ,  CORTESE, Mario, Francesco

Inventor： BALDO, Lorenzo ,  COMBI, Chantal ,  CORTESE, Mario, Francesco

IPC: B81B7/00 ,  G01L9/00 ,  G01L13/02 ,  G01D11/24

CPC classification number: B81B7/0061 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2203/0154 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Electronic device (1, 1a, 1b, 1c, 1d, 1e) which comprises: a substrate (2) provided with at least one passing opening (5), a MEMS device (7) with function of differential sensor provided with a first and a second surface (9, 10) and of the type comprising at least one portion (11) sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface (11a, 11b) thereof, the first surface (9) of the MEMS device (7) leaving the first active surface (11a) exposed and the second surface (10) being provided with a further opening (12) which exposes said second opposed active surface (11b), the electronic device (1, 1d, 1e) being characterised in that the first surface (9) of the MEMS device (7) faces the substrate (2) and is spaced therefrom by a predetermined distance, the sensitive portion (11) being aligned to the passing opening (5) of the substrate (2), and in that it also comprises: a protective package (14, 14a, 14b), which incorporates at least partially the MEMS device (7) and the substrate (2) so as to leave the first and second opposed active surfaces (11a, 11b) exposed respectively through the passing opening (5) of the substrate (2) and the further opening (12) of the second surface (10).

Abstract translation: 一种电子装置（1,1a，1b，1c，1d，1e），包括：设置有至少一个通过开口（5）的衬底（2），具有功能的MEMS装置（7） ，所述差动传感器设置有第一和第二表面（9,10），并且所述类型包括至少一个对与第一和第二相对的有效表面相对应的流体的化学和/或物理变化敏感的部分（11） （11a，11b），所述MEMS器件（7）的第一表面（9）离开所述第一有源表面（11a）并且所述第二表面（10）设置有另一开口（12），所述另一开口（12）暴露所述第二对置 所述电子装置（1,1d，1e）的特征在于，所述MEMS装置（7）的所述第一表面（9）面向所述衬底（2）且与所述衬底（2）隔开预定距离，所述敏感表面 部分（11）与衬底（2）的通过开口（5）对准，并且其还包括：保护包装（14， ，其至少部分地并入MEMS器件（7）和衬底（2），从而使第一和第二相对的有源表面（11a，11b）分别暴露于衬底的通过开口（5） （2）和第二表面（10）的另一开口（12）。

公开(公告)号：WO2007042336A3

公开(公告)日：2007-04-19

申请号：PCT/EP2006/064298

申请日：2006-07-14

Applicant: STMicroelectronics S.r.l. ,  COMBI, Chantal ,  VIGNA, Benedetto ,  ZIGLIOLI, Federico Giovanni ,  BALDO, Lorenzo ,  MAGUGLIANI, Manuela ,  LASALANDRA, Ernesto ,  RIVA, Caterina

Inventor： COMBI, Chantal ,  VIGNA, Benedetto ,  ZIGLIOLI, Federico Giovanni ,  BALDO, Lorenzo ,  MAGUGLIANI, Manuela ,  LASALANDRA, Ernesto ,  RIVA, Caterina

IPC: B81B7/02 ,  B81B7/00

Abstract: In a substrate-level assembly (22), a device substrate (20) of semiconductor material has a top face (20a) and houses a first integrated device (1; 16), in particular provided with a buried cavity (3), formed within the device substrate (20), and with a membrane (4), suspended over the buried cavity (3) in the proximity of the top face (20a). A capping substrate (21) is coupled to the device substrate (20) above the top face (20a) so as to cover the first integrated device (1; 16), in such a manner that a first empty space (25) is provided above the membrane (4). Electrical-contact elements (28a, 28b) electrically connect the integrated device (1; 16) with the outside of the substrate-level assembly (22). In one embodiment, the device substrate (20) integrates at least a further integrated device (1', 10) provided with a respective membrane (4'); and a further empty space (25'), fluidically isolated from the first empty space (25), is provided over the respective membrane (4') of the further integrated device (1', 10).

公开(公告)号：EP3511688A1

公开(公告)日：2019-07-17

申请号：EP19152183.0

申请日：2019-01-16

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  BALDO, Lorenzo

IPC: G01L27/00 ,  G01L9/00

Abstract: A microelectromechanical pressure sensor (1) provided with: a monolithic body (2) of semiconductor material having a front surface (2a); and a sensing structure (4) integrated in the monolithic body (2) and having a buried cavity (5), completely contained within the monolithic body (2), at the front surface (2a); a sensing membrane (6), suspended above the buried cavity (5) and formed by a surface portion (2') of the monolithic body (2); and sensing elements (8), of a piezoresistive type, arranged in the sensing membrane (5) and designed to detect a deformation of the sensing membrane (5) as a result of a pressure. The pressure sensor (1) is further provided with a self-test structure (12), integrated within the monolithic body (2), wherein the sensing structure (4) is integrated, such as to cause application of a testing deformation of the sensing membrane (6) in order to verify proper operation of the sensing structure (4).

公开(公告)号：EP3276392A1

公开(公告)日：2018-01-31

申请号：EP17162626.0

申请日：2017-03-23

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  BALDO, Lorenzo ,  CARMINATI, Roberto ,  VILLA, Flavio Francesco

IPC: G02B26/08 ,  B81C1/00

Abstract: A process for manufacturing a MEMS micromirror device from a monolithic body (104) of semiconductor material. Initially, a buried cavity (106) is formed in the monolithic body and delimits at the bottom a suspended membrane (105) arranged between the buried cavity (106) and a main surface (104A) of the monolithic body (104). Then, the suspended membrane (105) is defined to form a supporting frame (115) and a mobile mass (114) rotatable about an axis (C) and carried by the supporting frame (115). The mobile mass forms an oscillating mass (107), supporting arms (109), spring portions (111), and mobile electrodes (112) combfingered to fixed electrodes (113). A reflecting region (145) is formed on top of the oscillating mass (107).

Abstract translation: 一种由半导体材料的单片体（104）制造MEMS微镜器件的方法。 最初，埋入式空腔（106）形成在整体式主体中，并且在底部限定了布置在埋入式空腔（106）与整体式主体（104）的主表面（104A）之间的悬浮膜（105）。 然后，限定悬挂膜105以形成支撑框架115和可围绕轴线C旋转并由支撑框架115承载的可移动质量块114。 可移动块形成摆动块（107），支撑臂（109），弹簧部分（111）和梳状地连接到固定电极（113）的可移动电极（112）。 反射区域（145）形成在振动块（107）的顶部上。

公开(公告)号：EP4239304A1

公开(公告)日：2023-09-06

申请号：EP23154638.3

申请日：2023-02-02

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  DANIELE, Filippo ,  BALDO, Lorenzo ,  CAPELLI, Giulio ,  ALONGI, Salvatore

IPC: G01L19/04 ,  G01L19/14 ,  G01L9/00

Abstract: A pressure sensor device (1) is provided with: a pressure detection structure (2) made in a first die (4) of semiconductor material; a package (20), configured to internally accommodate the pressure detection structure (2) in an impermeable manner, the package (20) having a base structure (21) and a body structure (22), arranged on the base structure (21), with an access opening (30) in contact with an external environment and internally defining a housing cavity (23), in which the first die (4) is arranged covered with a coating material (32). The pressure sensor device (1) is also provided with a heating structure (40), accommodated in the housing cavity (23) and for allowing heating of the pressure detection structure (2) from the inside of the package (20).

公开(公告)号：EP3326964B1

公开(公告)日：2019-07-24

申请号：EP17172106.1

申请日：2017-05-20

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  BALDO, Lorenzo ,  GIUSTI, Domenico

IPC: B81C1/00 ,  B81B7/00

公开(公告)号：EP3450949A1

公开(公告)日：2019-03-06

申请号：EP18188756.3

申请日：2018-08-13

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  BALDO, Lorenzo

IPC: G01L9/00

Abstract: Microelectromechanical transducer (1; 11) comprising a semiconductor body (2), four cavities (4a-4d) buried within the semiconductor body (2) and four membranes (5a-5d), each membrane (5a-5d) being suspended over a respective cavity (4a-4d) and being capable of being deflected by the action of a pressure external to the microelectromechanical transducer (1; 11); the microelectromechanical transducer (1; 11) further comprising four transducer elements (6a-6d; 16a-16d) housed by a respective membrane (5a-5d) and electrically coupled to one another in a Wheatstone bridge configuration to convert said external pressure into an electrical signal.

公开(公告)号：EP3326964A1

公开(公告)日：2018-05-30

申请号：EP17172106.1

申请日：2017-05-20

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  BALDO, Lorenzo ,  GIUSTI, Domenico

IPC: B81C1/00

CPC classification number: B81C1/00238 ,  B81B7/0051 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0133 ,  B81C2203/032 ,  B81C2203/035 ,  B81C2203/0792

Abstract: Described herein is an integrated device (1), having: a first die (2); a second die (6) coupled in a stacked way on the first die (2) along a vertical axis (z); a coupling region (16) arranged between facing surfaces (2a, 6a) of the first die (2) and of the second die (6), which face one another along the vertical axis (z) and lie in a horizontal plane (xy) orthogonal to the vertical axis (z), for mechanical coupling of the first and second dies; electrical-contact elements (17) carried by the facing surfaces (2a, 6a) of the first and second dies, aligned in pairs along the vertical axis (z); and conductive regions (18) arranged between the pairs of electrical-contact elements (17) carried by the facing surfaces (2a, 6a) of the first and second dies, for their electrical coupling. Supporting elements (20) are arranged at the facing surface (2a; 6a) of at least one between the first and second dies and elastically support respective electrical-contact elements.

公开(公告)号：EP3316597A1

公开(公告)日：2018-05-02

申请号：EP17172103.8

申请日：2017-05-20

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  AZPEITIA URQUIA, Mikel ,  BALDO, Lorenzo

IPC: H04R19/00 ,  H04R19/04

CPC classification number: B81B3/0021 ,  B81B7/0077 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2207/012 ,  B81C1/00158 ,  B81C1/00269 ,  H04R19/005 ,  H04R19/04

Abstract: Method of manufacturing a transducer module (10), comprising the steps of: forming, on a substrate (1), a first MEMS transducer (20), in particular a gyroscope, and a second MEMS transducer (30), in particular an accelerometer, having a suspended membrane (4a); forming, on the substrate (1), a conductive layer (4) and defining the conductive layer (4) in order to provide, simultaneously, at least one conductive strip (4c; 4d) electrically coupled to the first MEMS transducer (20) and the membrane (4a) of the second MEMS transducer (30).

Abstract translation: 一种制造换能器模块（10）的方法，包括以下步骤：在衬底（1）上形成第一MEMS换能器（20），特别是陀螺仪和第二MEMS换能器（30），特别是加速度计 ，具有悬浮膜（4a）; 在衬底（1）上形成导电层（4）并限定导电层（4），以便同时提供电耦合到第一MEMS换能器（20）的至少一个导电条（4c; 4d） 和第二MEMS换能器（30）的膜（4a）。

公开(公告)号：EP3210934A1

公开(公告)日：2017-08-30

申请号：EP16194672.8

申请日：2016-10-19

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  CONTI, Sebastiano ,  BALDO, Lorenzo ,  VILLA, Flavio Francesco

IPC: B81B3/00

CPC classification number: B81B7/0038 ,  B81B3/0086 ,  B81B7/0019 ,  B81B7/0061 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00269

Abstract: A micro-electro-mechanical pressure sensor device (100), formed by a cap region (102) and by a sensor region (101) of semiconductor material. An air gap (107) extends between the sensor region (101) and the cap region (102; 103); a buried cavity (109) extends underneath the air gap, in the sensor region (101), and delimits a membrane (111) at the bottom. A through trench (110) extends within the sensor region (101) and laterally delimits a sensitive portion (121) housing the membrane, a supporting portion (120), and a spring portion (122), the spring portion connecting the sensitive portion (121) to the supporting portion (120). A channel (123) extends within the spring portion (122) and connects the buried cavity (109) to a face (101A) of the second region (101). The first air gap (107) is fluidically connected to the outside of the device, and the buried cavity (109) is isolated from the outside via a sealing region (106B) arranged between the sensor region (101) and the cap region (102).

Abstract translation: 一种微电子机械压力传感器装置（100），其由帽区（102）和半导体材料的传感器区域（101）形成。 气隙（107）在传感器区域（101）和盖区域（102; 103）之间延伸; 埋入空腔（109）在传感器区域（101）中的气隙下方延伸，并在底部界定膜（111）。 贯穿沟槽（110）在传感器区域（101）内延伸并横向限定容纳薄膜的敏感部分（121），支撑部分（120）和弹簧部分（122），弹簧部分连接敏感部分 121）连接到支撑部分（120）。 通道（123）在弹簧部分（122）内延伸并且将掩埋腔（109）连接到第二区域（101）的面（101A）。 第一气隙107流体连接到装置的外部，并且掩埋腔109经由布置在传感器区域101和帽区域102之间的密封区域106B与外部隔离。 ）。