High voltage regulator and corresponding voltage regulation method
    2.
    发明公开
    High voltage regulator and corresponding voltage regulation method 失效
    Hochspannungsregelungsschaltung und entsprechendes Spannungsregelungsverfahren

    公开(公告)号:EP0915408A1

    公开(公告)日:1999-05-12

    申请号:EP97830575.3

    申请日:1997-11-05

    CPC classification number: G05F1/465 G05F3/247

    Abstract: This invention relates to a high voltage regulator partly supplied by a boosted voltage (PUMPOUT) and adapted to deliver a regulated output voltage (Vout) on an output terminal (OUT), starting from a sampled voltage (Vsample) obtained by dividing the regulated output voltage (Vout), which regulator comprises at least a comparator element (2) being supplied a supply voltage (Vdd) and feedback connected to a divider (4) of the regulated output voltage (Vout), the divider (4) being a diode type of divider connected between the output terminal (OUT) and a first comparison voltage reference (GND, Vref_v) and having a central connection node (Y, Z) connected to a non-inverting terminal of the comparator element (2).
    The invention also relates to a method of regulating a voltage (Vout) derived from a boosted voltage (PUMPOUT), comprising the steps of:

    obtaining a sampled voltage (Vsample) as the voltage value at a central connection node (Y, Z) of a diode type of divider (4) connected to a reference of the voltage to be regulated (Vout) and connected to a first comparison voltage reference (GND, Vref_v);
    regulating this voltage (Vout) according to the comparison of said sampled voltage (Vsample) with a second comparison voltage reference (Vref_v, GND).

    Abstract translation: 本发明涉及由升压电压(PUMPOUT)部分提供并适于在输出端(OUT)上输出调节输出电压(Vout)的高电压调节器,从通过将调节输出 电压(Vout),所述调节器至少包括比较器元件(2),所述比较器元件(2)被供应电源电压(Vdd),并且反馈连接到所述调节输出电压(Vout)的分压器(4),所述分压器(4)是二极管 连接在输出端(OUT)和第一比较电压基准(GND,Vref_v)之间​​并具有连接到比较器元件(2)的非反相端的中心连接节点(Y,Z)的分压器类型。 本发明还涉及一种调节从升压电压(PUMPOUT)导出的电压(Vout)的方法,包括以下步骤:获得采样电压(Vsample)作为中心连接节点(Y,Z)处的电压值 连接到待调节电压(Vout)的参考并连接到第一比较电压基准(GND,Vref_v)的二极管类型的分压器(4); 根据所述采样电压(Vsample)与第二比较电压基准(Vref_v,GND)的比较来调节该电压(Vout)。

    Temperature correlated voltage generator circuit and corresponding voltage regulator for a single power memory cell, particularly of the FLASH-type
    7.
    发明公开
    Temperature correlated voltage generator circuit and corresponding voltage regulator for a single power memory cell, particularly of the FLASH-type 失效
    温度相关电压发生器电路和用于提供与单个电源上的存储器单元相关联的电压调节器,特别是闪存类型的

    公开(公告)号:EP0915407A1

    公开(公告)日:1999-05-12

    申请号:EP97830574.6

    申请日:1997-11-05

    CPC classification number: G05F3/245 Y10S323/907

    Abstract: The invention relates to a temperature-related voltage generating circuit having an input terminal (15) receiving a control voltage (V BG ) independent of temperature, and an output terminal (16) delivering a temperature-related control voltage (Vout), the input and output terminals (15, 16) being connected together through at least an amplifier stage (19) adapted to set an output reference voltage from a comparison of input voltages, and comprising a generator element (T1) generating a Varying voltage (V BE ) with temperature connected between a ground voltage reference (GND) and a non-inverting input terminal of the amplifier stage (19), which has an output terminal adapted to deliver a multiple of the varying voltage (V BE ) with temperature to an inverting input terminal of a comparator stage (18); the comparator stage (18) has its output connected to the temperature-related voltage generating circuit (14) and a non-inverting input terminal receiving the control voltage (V BG ) independent of temperature to evaluate the difference between the control voltage (V BG ) independent of temperature and said voltage being a multiple of the varying voltage (V BE ) with temperature and to output a temperature-related control voltage (Vout) having at room temperature a mean value which is independent of its thermal differential (δVout/δT) and increases with temperature.
    The invention also relates to a regulator for a drain voltage (Vd) of a single-supply memory cell (M1), comprising a temperature-related voltage generating circuit (14) according to the invention.

    Abstract translation: 本发明涉及具有输入端子(15)的温度相关的电压生成电路接收控制电压(VBG)与温度无关,并提供一个温度相关的控制电压(Vout),所述输入输出端子(16)和 输出端子(15,16)通过连接在一起的至少到放大器级(19)angepasst从输入电压的比较,并包括发电机元件(T1)产生变化的电压(VBE)与温度设定为输出参考电压 连接在地电压基准(GND)和所述放大器级(19),其具有与输出端子angepasst以反转的输入端子提供变化的电压(VBE)随温度的倍数的一个非反相输入端之间 比较器级(18); 的比较器级(18)具有其输出连接到所述温度有关的电压发生电路(14)和一个非反相输入端接收与温度无关的控制电压(VBG),以评估(VBG)独立于控制电压之间的差 温度和所述电压是所述变化的电压(VBE)的随温度和输出的平均值的所有其是独立于其热差异的(增量比Vout /增量T)在室温下具有的温度相关的控制电压(Vout)的倍数的 随着温度增加而增加。 因此,本发明涉及一种用于一个温度相关的电压发生电路(14)的单电源的存储单元(M1)的漏极电压(Vd)的调节器雅丁于本发明。

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