Abstract:
PURPOSE: A fabricating method of a semiconductor device is provided to prevent the contact resistance distribution between a phase change material and an electrode by improving the interface property of the electrode. CONSTITUTION: In a fabricating method of a semiconductor device, a first mold film(120) is formed on a semiconductor substrate(110). A first opening part(121) filling word lines(WL0,WL1) is formed in the first mold film. In said the first mold film, the first opening(121) crowding with the word line(WL0,WL1) is formed. A vertical cell diode(Dp) is formed on the word line. The vertical cell diode comprises a first semiconductor pattern(132) and a second semiconductor pattern(134). The first electrode(145) locates on the vertical cell diode. A phase change material pattern(211) is arranged in the first electrode.
Abstract:
PURPOSE: An apparatus and a method for operating duplication HARQ in mobile communication system are provided to prevent the duplication of MAC PDU by determining whether MAC PDU is received repeatedly. CONSTITUTION: A terminal(300) transmits a sound reference signal or a demodulation reference signal to a base station(310). The base station transmits a TA command MAC CE to the terminal(312). The terminal compensate a reverse timing by applying a TA command according to the duplication phenomenon of the TA command MAC CE(314). The terminal transmits ACK to the base station to indicate the success of reception of the TA command MAC CE(316). The base station retransmits an MAC PDU including the TA command MAC CE to the terminal(318).
Abstract:
Provided is a method and an apparatus for processing data at a high speed by a UE for data communication. In the method, received data is divided into a header and payload information, which are then stored in different memories. In the method, header processing and payload data processing can be performed in parallel, and two memory devices can perform parallel processing without sharing a bus.
Abstract:
PURPOSE: A device and a method for requesting an uplink resource about a semi-persistent scheduling data service in a wide band wireless communication system are provided to reallocate uplink resources of an SPS(Semi-Persistent Scheduling) service. CONSTITUTION: A communication controller(402) confirms whether uplink data is generated. If the uplink data is the uplink data of the SPS service, a message generator(404) generates an SPS exclusive BSR CE(Buffer Status Reporting Control Element) including the buffer state of the SPS service. An RF transmitter(416) transmits the SPS exclusive BSR CE.
Abstract:
PURPOSE: A method and an apparatus for forming a phase-change layer and a method for manufacturing a phase-change memory device are provided to improve the composition dispersion of the phase-change layer using a chamber pressure change cycle with an atomic layer deposition method. CONSTITUTION: Source is supplied to a chamber. The source is purged from the chamber. According to the state of the source, the pressure of the chamber is changed. In case of supplying the source into the chamber, a high pressure is set for the chamber. In case of purging the source from the chamber, a low pressure is set for the chamber. A phase-chnge layer with superior composition dispersion is formed.
Abstract:
A phase change memory device and a method of formation thereof are provided to form a phase change material layer at low temperature so that the high integration of a phase change memory device is possible. A formation method of the phase change memory device comprises: a step forming the first insulating layer(20) having the first opening(30) on the substrate(10); a step for forming a phase change material layer within a first opening by providing reactive radical including the precursors and nitrogen for the phase change material in substrate; a step for forming the second conductor on the phase change material layer; and a reactive radical has the chemical formula NRnH3-n or N2RnH4-n(0
Abstract:
A method and an apparatus for instructing the DRX(Discontinuous Reception) mode operation in a mobile telecommunication system are provided to reduce the signal load according to the DRX transition and to instruct the transition toward the desired DRX process of a base station efficiently. A process for determining an object DRX process for a terminal is performed. Thereafter, a process for deducting the index of the object DRX process from the index of the present DRX process of the terminal is performed. When the deducted value is larger than 0, a process for producing the DRX instruction information is performed so the transition of the DRX process is performed to the DRX process with the low index as much as the deducted value. When the deducted value is not larger than 0, a process for producing the DRX instruction information is performed so the transition of the DRX process is performed to the DRX process with the low index as much as the sum of the number of plural DRX processes and the deducted value. Thereafter, a process for transmitting the DRX instruction information to the terminal by means of the MAC(Medium Access Control) signal or two-layer or one layer signal.
Abstract:
An apparatus and a method for receiving system information in a mobile communication system are provided to receive scheduling information about plural system information blocks through a BCH and schedule the receiving point of time of a DL-SCH at which the system information blocks are transmitted from the received scheduling information in the BCH to receive the plural system information blocks. A method for receiving system information in a mobile communication system comprises the following steps of: decoding information received through a BCH(Broadcast Channel) channel in a predetermined bandwidth and a predetermined location of a frame(501); checking whether a CRC(Cyclic Redundancy Check) error occurs in the received information(503); acquiring information about the location of a frame to which each flexibility part system information are transmitted from the scheduling information of the received fixed part system information if it is checked that the CRC error does not occur(504); and receiving flexibility part system information transmitted from a DL-SCH(Downlink-Shared Channel) in a sub frame predefined in the frame(505).
Abstract:
A method of forming a ferroelectric film and a method of manufacturing a ferroelectric capacitor using the same are provided to improve data retention characteristics of the ferroelectric film and to improve leakage current characteristics by preventing the generation of an unwanted impurity layer on the ferroelectric film due to the reaction of a residual gas on an oxygen gas using a second inert gas. At least one out of a predetermined gas containing oxygen or a first inert gas and a carrier gas are supplied into a reaction chamber in a predetermined flow rate range of 2.5 : 1.0 to 3.5 : 1.0(S20). A substrate is loaded into the reaction chamber and a ferroelectric film is formed on the substrate(S30). A second inert gas is supplied onto the ferroelectric layer while the substrate is unloaded from the reaction chamber(S40).