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公开(公告)号：KR100687760B1
公开(公告)日：2007-02-27
申请号：KR1020060017888
申请日：2006-02-23
Applicant: 한국전자통신연구원
IPC: H01L21/316
Abstract: An insulator experiencing abruptly metal-insulator transition and a method for manufacturing the same, and a device using the same are provided to quickly transit metal and insulator without changing a structure of the insulator. An insulator is abruptly transited into a metal by energy variation between electrons, without changing its structure, and has an energy band gap of 2 eV or more. The energy variation is conducted by changing temperature, pressure and electric field applied from an exterior. The insulator is any one of Al oxide, Ti oxide, and oxide of Al-Ti alloy. A device includes a substrate(10), a first insulator thin film formed on the substrate, and at least two electrodes(16,18) spaced apart from each by the insulator thin film.
Abstract translation: 提供了一种经历突然金属 - 绝缘体转变的绝缘体及其制造方法，以及使用该绝缘体的装置，以快速转移金属和绝缘体而不改变绝缘体的结构。 绝缘体通过电子之间的能量变化而突然转变为金属，而不改变其结构，并且具有2eV或更大的能带隙。 能量变化通过改变从外部施加的温度，压力和电场来进行。 绝缘体是Al氧化物，Ti氧化物和Al-Ti合金的氧化物中的任何一种。 一种器件包括衬底（10），在衬底上形成的第一绝缘体薄膜，以及至少两个由绝缘体薄膜隔开的电极（16,18）。
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公开(公告)号：KR1020070014939A
公开(公告)日：2007-02-01
申请号：KR1020060018506
申请日：2006-02-25
Applicant: 한국전자통신연구원
CPC classification number: G01R31/1245 , H01L49/003
Abstract: A partial discharge measuring device and a measuring system having the same are provided to check partial discharge without external noise by bypassing current generated due to the partial discharge by rapid metal-insulator transition through an arrester unit. A partial discharge measuring device includes an arrester unit(140) conducted with partial discharge of a gas insulator executing rapid metal-insulator transition; a first electrode(150) electrically connected to the arrester unit to detect the partial discharge and have a first resistance value; and at least one second electrode(160) connected with the first electrode in parallel, wherein the second electrode has a resistance value smaller than the resistance value of the first electrode. The insulator is SF6(Sulfur Hexafluoride) gas.
Abstract translation: 提供了一种局部放电测量装置及其测量系统，以通过绕过由于通过避雷器单元的快速金属 - 绝缘体转变而产生的局部放电产生的电流来检查没有外部噪声的局部放电。 局部放电测量装置包括：执行快速金属 - 绝缘体转换的气体绝缘体的局部放电导管的避雷器单元（140）; 电连接到避雷器单元以检测局部放电并具有第一电阻值的第一电极（150） 以及与第一电极并联连接的至少一个第二电极（160），其中第二电极具有小于第一电极的电阻值的电阻值。 绝缘子是SF6（六氟化硫）气体。
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公开(公告)号：KR1020070003529A
公开(公告)日：2007-01-05
申请号：KR1020060015634
申请日：2006-02-17
Applicant: 한국전자통신연구원
IPC: H01L27/115
CPC classification number: H01L27/10 , B82Y10/00 , G11C13/0007 , G11C13/0014 , G11C2213/32 , G11C2213/51 , H01L29/8615 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146 , H01L45/148 , H01L49/003
Abstract: A memory device using abrupt metal-insulator transition and a method for operating the same are provided to define an on-state by using a conductive path covering the abrupt metal-insulator transition material layer. A memory device comprises a substrate(102), a metal-insulator transition material layer disposed on the substrate for undergoing abrupt metal insulator transition by energy change between electrons, and at least two electrodes contacting the metal-insulator transition material layer and melted by heat to form a conductive path on the metal-insulator transition material layer. The metal-insulator transition material layer contains at least one selected from the group consisting of an inorganic compound semiconductor or insulator material to which low-concentration holes are added, an organic semiconductor or insulator material to which low-concentration holes are added, a semiconductor material to which low-concentration holes are added, and an oxide semiconductor or insulator material to which low-concentration holes are added.
Abstract translation: 提供使用突变金属 - 绝缘体转变的存储器件及其操作方法，以通过使用覆盖突变金属 - 绝缘体转移材料层的导电路径来限定导通状态。 存储器件包括衬底（102），设置在衬底上的金属 - 绝缘体转变材料层，用于通过电子之间的能量变化进行突然的金属绝缘体转变，以及至少两个接触金属 - 绝缘体转变材料层的电极并通过热量熔化 以在金属 - 绝缘体转变材料层上形成导电路径。 金属 - 绝缘体过渡材料层含有从添加有低浓度空穴的无机化合物半导体或绝缘体材料中选择的至少一种，添加低浓度孔的有机半导体或绝缘体材料，半导体 添加低浓度孔的材料和添加有低浓度孔的氧化物半导体或绝缘体材料。
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公开(公告)号：KR100467330B1
公开(公告)日：2005-01-24
申请号：KR1020030035556
申请日：2003-06-03
Applicant: 한국전자통신연구원
IPC: H01L21/335
CPC classification number: H01L49/003
Abstract: Provided is a field effect transistor. The field effect transistor includes an insulating vanadium dioxide (VO 2 ) thin film used as a channel material, a source electrode and a drain electrode disposed on the insulating VO 2 thin film to be spaced apart from each other by a channel length, a dielectric layer disposed on the source electrode, the drain electrode, and the insulating VO 2 thin film, and a gate electrode for applying a predetermined voltage to the dielectric layer.
Abstract translation: 提供了一种场效应晶体管。 场效应晶体管包括用作沟道材料的绝缘二氧化钒（VO 2 SUB）薄膜，设置在绝缘VO 2 SUB 2薄膜上的源电极和漏电极， 薄膜通过沟道长度彼此间隔开，设置在源电极，漏电极和绝缘VO SUB / 2薄膜上的电介质层以及用于施加预定电压的栅电极 电压到电介质层。
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95.发明公开
公开(公告)号：KR1020040099797A
公开(公告)日：2004-12-02
申请号：KR1020030031903
申请日：2003-05-20
Applicant: 한국전자통신연구원
IPC: H01L29/772
CPC classification number: H01L49/003 , H01L21/31691 , H01L51/0051 , H01L51/0525 , H01L51/0541 , H01L51/0545
Abstract: PURPOSE: An FET(Field Effect Transistor) and a manufacturing method thereof are provided to obtain large current amplification at a low gate voltage and a low source-drain voltage by using an insulator-semiconductor phase transition material layer as channel substance. CONSTITUTION: An insulator-semiconductor phase transition material layer(120) is formed on a substrate(110). A first state of few hole charges and a second state of a lot of hole charges are selectively obtained for the material layer according to the value of a gate voltage. A gate insulating layer(150) is formed on the material layer. A gate electrode(160) is formed on the gate insulating layer. When the gate electrode applies a predetermined negative voltage to the material layer, a lot of hole charges flow into a surface of the material layer. A source(130) and a drain(140) are formed at both sides of the material layer to flow carriers through the material layer in the second state. At this time, the material layer is used as a conductive channel. The material layer is made of VO2.
Abstract translation: 目的：提供一种FET（场效应晶体管）及其制造方法，通过使用绝缘体 - 半导体相变材料层作为沟道物质，在低栅极电压和低源极 - 漏极电压下获得大电流放大。 构成：在衬底（110）上形成绝缘体 - 半导体相变材料层（120）。 根据栅极电压的值，为材料层选择性地获得少孔电荷的第一状态和大量空穴电荷的第二状态。 在该材料层上形成栅极绝缘层（150）。 在栅极绝缘层上形成栅电极（160）。 当栅电极向材料层施加预定的负电压时，大量的孔电荷流入材料层的表面。 在物料层的两侧形成有源极（130）和漏极（140），以在第二状态下使载流子流过材料层。 此时，材料层用作导电通道。 材料层由VO2制成。
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Patent Agency Ranking
公开(公告)号：KR100433623B1
公开(公告)日：2004-05-31
申请号：KR1020010057176
申请日：2001-09-17
Applicant: 한국전자통신연구원
IPC: H01L29/772
CPC classification number: H01L49/003
Abstract: A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.
Abstract translation: 开关场效应晶体管包括衬底; 在衬底上形成的Mott-Brinkman-Rice绝缘体，Mott-Brinkman-Rice绝缘体在其中加入孔时发生突然的金属 - 绝缘体转变; 在Mott-Brinkman-Rice绝缘体上形成的介电层，当施加预定电压时，介电层向Mott-Brinkman-Rice绝缘体中添加孔; 形成在介电层上的栅电极，栅电极将预定电压施加到介电层; 形成为电连接到莫特 - 布林克曼 - 米绝缘体的第一部分的源电极; 以及形成为电连接到莫特 - 布林克曼 - 米绝缘体的第二部分的漏电极。
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公开(公告)号：KR1020030024156A
公开(公告)日：2003-03-26
申请号：KR1020010057176
申请日：2001-09-17
Applicant: 한국전자통신연구원
IPC: H01L29/772
CPC classification number: H01L49/003
Abstract: PURPOSE: A field effect transistor is provided to manifest metallic characteristic even though low density of hole is added by using sharp metal- insulator transition. CONSTITUTION: A LaTiO3(LTO) Mott transistor(410) is placed on a SrTiO3(STO) substrate(400). A Ba1-xSrxTiO3(BSTO) ferroelectric layer(420) is formed on a portion of the LTO Mott insulator. A gate electrode(430) is formed on the BSTO ferroelectric layer to apply a voltage. As a voltage is applied to the BSTO ferroelectric layer, holes are poured into the LTO Mott transistor so that abrupt metal-insulator transition occurs in it to form a conducting channel(415). A source and drain electrode(440,450) are formed on the first and second surface of the LTO Mott transistor respectively.
Abstract translation: 目的：提供场效应晶体管以表现出金属特性，即使通过使用尖锐的金属 - 绝缘体转变来增加孔的低密度。 构成：将LaTiO 3（LTO）莫特晶体管（410）放置在SrTiO 3（STO）衬底（400）上。 在LTO Mott绝缘体的一部分上形成Ba1-xSrxTiO3（BSTO）铁电层（420）。 在BSTO铁电层上形成栅电极（430）以施加电压。 当施加到BSTO铁电层上的电压时，将空穴注入到LTO Mott晶体管中，从而在其中发生突然的金属 - 绝缘体转变以形成导电沟道（415）。 源极和漏极（440,450）分别形成在LTO Mott晶体管的第一和第二表面上。
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公开(公告)号：KR1020020022162A
公开(公告)日：2002-03-27
申请号：KR1020000054801
申请日：2000-09-19
Applicant: 한국전자통신연구원
IPC: H01S3/136
Abstract: PURPOSE: A super high frequency modulation laser beam generator having a double annular resonator structure is provided to widen a range of modulation frequency of laser ray source by changing a polarization and a wavelength of specific modes of laser ray. CONSTITUTION: A first annular optic fiber laser(50) resonator has a length different from a second annular optic fiber laser resonator(60). An optic fiber coupler(70) couples the first annular optic fiber laser resonator with the second annular optic fiber laser resonator to oscillate double laser modes, so that a beat phenomenon between double laser modes is induced. Each of the first and second annular optic fiber laser resonators has a polarization regulator for modulating a frequency of output rays. The first annular optic fiber laser resonator comprises an optic fiber(51) for amplifying rays, a dispersal compensating fiber(52) for a non-linear polarization effect, an optic direction regulator(53) and a polarization regulator(54). The second annular optic fiber laser resonator comprises a dispersal compensating fiber(62) and a polarization regulator(61).
Abstract translation: 目的：提供一种具有双环形谐振器结构的超高频调制激光束发生器，通过改变激光的特定模式的偏振和波长来扩大激光光源的调制频率范围。 构成：第一环形光纤激光器（50）谐振器具有与第二环形光纤激光谐振器（60）不同的长度。 光纤耦合器（70）将第一环形光纤激光谐振器与第二环形光纤激光谐振器耦合以振荡双激光模式，从而引起双激光模式之间的跳动现象。 第一和第二环形光纤激光谐振器中的每一个具有用于调制输出光线的频率的偏振调节器。 第一环形光纤激光谐振器包括用于放大光线的光纤（51），用于非线性偏振效应的分散补偿光纤（52），光学方向调节器（53）和偏振调节器（54）。 第二环形光纤激光谐振器包括分散补偿光纤（62）和偏振调节器（61）。
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公开(公告)号：KR101942094B1
公开(公告)日：2019-01-24
申请号：KR1020180096337
申请日：2018-08-17
Applicant: 한국전자통신연구원
IPC: H01L31/08 , G01J1/02 , H01L31/0224 , H01L31/032 , H01L31/048
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