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公开(公告)号：KR1020070059920A
公开(公告)日：2007-06-12
申请号：KR1020060085887
申请日：2006-09-06
Applicant: 한국전자통신연구원
CPC classification number: H04W40/02 , H04L41/0273 , H04L45/52
Abstract: A web service interworking method between nodes using different SOAP(Simple Object Access Protocol) transfer protocols is provided to solve a problem in case nodes use their respective SOAP transfer protocols in the process of searching or calling web services. A master node among the nodes which form an ad-hoc environment is selected for environment setup procedures(S400). The master node collects path information between nodes(S420). The master node establishes all possible routing paths, based on the collected path information(S440). While maintaining the established routing paths, the master node executes transfer protocol conversion and routing according to the established routing path information when a message is received from a node(S460).
Abstract translation: 提供了使用不同SOAP（简单对象访问协议）传输协议的节点之间的Web服务互通方法来解决在搜索或调用Web服务的过程中节点使用其各自的SOAP传输协议的问题。 选择形成自组织环境的节点中的主节点进行环境设置过程（S400）。 主节点收集节点之间的路径信息（S420）。 主节点基于收集的路径信息建立所有可能的路由路径（S440）。 在保持建立的路由路径的同时，当从节点接收到消息时，主节点根据建立的路由路径信息执行传输协议转换和路由（S460）。
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公开(公告)号：KR100701157B1
公开(公告)日：2007-03-28
申请号：KR1020060025208
申请日：2006-03-20
Applicant: 한국전자통신연구원
IPC: H01L27/115
CPC classification number: H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/141
Abstract: A nonvolatile memory device and its manufacturing method are provided to improve remarkably a sensing margin of device and to reduce the consumption of current and power by forming a spacer type structure using a phase changeable material. A nonvolatile memory device comprises a semiconductor substrate(100), a lower electrode(110) on the substrate, an upper electrode, and a phase changeable material. The upper electrode(130) is located opposite to the lower electrode. The phase changeable material(121) is located between the lower electrode and the upper electrode. The phase changeable material is formed like a spacer type structure. The phase changeable material has a variable resistivity according to a crystal state of the phase changeable material itself.
Abstract translation: 提供非易失性存储器件及其制造方法，以显着改善器件的感测裕度，并通过使用相变材料形成间隔物型结构来减少电流和功率的消耗。 非易失性存储器件包括半导体衬底（100），衬底上的下电极（110），上电极和相变材料。 上电极（130）位于与下电极相对的位置。 相变材料（121）位于下电极和上电极之间。 相变材料形成为间隔型结构。 相变材料根据相变材料本身的晶体状态具有可变电阻率。
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公开(公告)号：KR1020070025304A
公开(公告)日：2007-03-08
申请号：KR1020050081314
申请日：2005-09-01
Applicant: 한국전자통신연구원
IPC: H01L27/10
CPC classification number: H01L45/126 , H01L45/1233
Abstract: A phase change memory and its manufacturing method are provided to reduce remarkably the consumption of power by using a penetrating electrode structure. A phase change memory includes a first phase change thin film and a heat radiating metallic electrode. The first phase change thin film(14) includes a penetrating electrode structure(21), wherein the penetrating electrode structure penetrates a predetermined region. The heat radiating metallic electrode is buried in the penetrating electrode structure. A crystal state of the penetrating electrode structure is capable of being changed due to a thermal energy applied from the heat radiating metallic electrode. The change of the crystal state of the penetrating electrode structure is restricted by the first phase change thin film.
Abstract translation: 提供了一种相变存储器及其制造方法，以通过使用穿透电极结构显着地减少功率消耗。 相变存储器包括第一相变薄膜和散热金属电极。 第一相变薄膜（14）包括穿透电极结构（21），其中穿透电极结构穿透预定区域。 散热金属电极埋在穿透电极结构中。 穿透电极结构的晶体状态能够由于从散热金属电极施加的热能而变化。 穿透电极结构的晶体状态的变化受到第一相变薄膜的限制。
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公开(公告)号：KR100687747B1
公开(公告)日：2007-02-27
申请号：KR1020050069803
申请日：2005-07-29
Applicant: 한국전자통신연구원
IPC: H01L27/115
CPC classification number: H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
Abstract: 상변화물질층과 발열성 전극 사이의 접촉면적을 최대화할 수 있는 상변화 메모리소자 및 그 제조방법을 제공한다. 그 메모리소자 및 제조방법은 포어에 의해 노출된 절연층의 적어도 일측면과 하부전극의 일면의 일부를 덮으면서 리세스된 영역을 포함하는 발열성 전극과, 리세스된 영역을 매립하면서 발열성 전극 상에 적층된 상변화물질층을 포함한다. 상기 소자는 상변화물질층과 발열성 전극 사이의 접촉면적을 최대화하여 소비전류를 크게 줄일 수 있다.
상변화물질층, 발열성 전극, 리세스된 영역, 접촉면적-
Patent Agency Ranking
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公开(公告)号：KR100416236B1
公开(公告)日：2004-01-24
申请号：KR1020010084388
申请日：2001-12-24
Applicant: 한국전자통신연구원
IPC: H04L12/28
Abstract: PURPOSE: A communication supplying system and a method therefor are provided to use boundary routers generating or updating binding information of mobile nodes by corresponding to binding update option packets transmitted from the mobile nodes, thereby supplying communication between the mobile nodes and correspondent nodes. CONSTITUTION: Boundary routers(210) receive binding update option packets and data packets from mobile nodes(110,111), generate or update binding information of the mobile nodes(110,111) in response to the binding update option packets, and transmit the data packets to correspondent nodes(220). The boundary routers(210) receive response packets from the correspondent nodes(220), and transmit the received response packets to the mobile nodes(110,111) corresponding to the binding information of the mobile nodes(110,111). The boundary routers(210) have binding cashes for storing the binding information.
Abstract translation: 目的：提供一种通信提供系统及其方法，用于通过对应于从移动节点发送的绑定更新选项分组来使用边界路由器来产生或更新移动节点的绑定信息，由此提供移动节点与对端节点之间的通信。 构成：边界路由器（210）接收来自移动节点（110,111）的绑定更新选项分组和数据分组，响应于绑定更新选项分组而生成或更新移动节点（110,111）的绑定信息，并将数据分组发送给通信者 节点（220）。 边界路由器（210）接收来自通信节点（220）的响应分组，并且将接收到的响应分组发送到对应于移动节点（110,111）的绑定信息的移动节点（110,111）。 边界路由器（210）具有用于存储绑定信息的绑定金库。
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公开(公告)号：KR1020030037356A
公开(公告)日：2003-05-14
申请号：KR1020010067863
申请日：2001-11-01
Applicant: 한국전자통신연구원
IPC: H01L21/328
Abstract: PURPOSE: A method for manufacturing a heterostructure bipolar transistor is provided to improve electrical characteristics by forming a junction between a thick base and an emitter using self-alignment, and isolating the base using an oxide layer. CONSTITUTION: After sequentially forming a collector(44) and a collector epitaxial layer(46) on a silicon substrate(41), the collector epitaxial layer(46) is isolated by forming an isolation layer(47) on the isolation region of the substrate. After forming a single crystal silicon epitaxial layer having the thickness of 50-200 nm on the resultant structure, an outer base region is defined by oxidizing the predetermined portion of the single crystal silicon epitaxial layer. After forming a base epitaxial layer and a dielectric layer(55), the base epitaxial layer is exposed by etching the dielectric layer(55). After sequentially forming a polysilicon layer and a silicon nitride layer, an emitter(56) made of the polysilicon layer is formed on the exposed base epitaxial layer by patterning the silicon nitride layer, the polysilicon layer and the dielectric layer(55). An outer base(58) and a base(530) are defined by implanting ions into the base epitaxial layer and the single crystal silicon epitaxial layer using the emitter(56) as a mask.
Abstract translation: 目的：提供一种用于制造异质结双极晶体管的方法，以通过使用自对准在厚基极和发射极之间形成结而改善电特性，并使用氧化物层隔离基极。 构成：在硅衬底（41）上依次形成集电极（44）和集电极外延层（46）之后，通过在衬底的隔离区域上形成隔离层（47）来隔离集电极外延层（46） 。 在所得结构上形成厚度为50-200nm的单晶硅外延层之后，通过氧化单晶硅外延层的预定部分来限定外部基极区域。 在形成基极外延层和电介质层（55）之后，通过蚀刻介电层（55）来暴露基极外延层。 在顺序地形成多晶硅层和氮化硅层之后，通过图案化氮化硅层，多晶硅层和电介质层（55），在暴露的基极外延层上形成由多晶硅层制成的发射极（56）。 通过使用发射器（56）作为掩模将离子注入基底外延层和单晶硅外延层来限定外基部（58）和基底（530）。
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公开(公告)号：KR100369939B1
公开(公告)日：2003-01-29
申请号：KR1020000083013
申请日：2000-12-27
Applicant: 한국전자통신연구원
IPC: H04L12/28
CPC classification number: H04L61/1511 , H04L29/12066 , H04L29/1216 , H04L29/1232 , H04L29/12801 , H04L29/12896 , H04L29/12915 , H04L61/157 , H04L61/2092 , H04L61/6004 , H04L61/605 , H04L61/6059
Abstract: A method of automatically generating IPv6 unicast addresses in IPv6-based next-generation Internet communication environments using a telephone number of a E.164 format allocated to a telephone terminal, and a method of looking up 32-bit IPv4 addresses or 128-bit IPv6 addresses, which are previously allocated to name addresses consisted of E. 164 telephone numbers, from a DNS. An automatic creation relates to a method in which an Internet host as a sender of an IP packet creates an IP address and a search from the DNS indicates a process of looking up an IP address of a receiver. The method automatically generates an IP address of a sender based on a telephone number and a search of an IP address of a receiver using DNS.
Abstract translation: 使用分配给电话终端的E.164格式的电话号码在基于IPv6的下一代因特网通信环境中自动生成IPv6单播地址的方法以及查找32位IPv4地址或128位IPv6的方法 地址，这些地址以前分配给来自DNS的由164个电话号码组成的名称地址。 自动创建涉及一种方法，其中作为IP分组的发送者的因特网主机创建IP地址，并且来自DNS的搜索表示查找接收者的IP地址的过程。 该方法根据电话号码自动生成发送者的IP地址，并使用DNS搜索接收者的IP地址。
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公开(公告)号：KR1020020054108A
公开(公告)日：2002-07-06
申请号：KR1020000082803
申请日：2000-12-27
Applicant: 한국전자통신연구원
IPC: H01L21/336
CPC classification number: H01L29/66431 , H01L29/665 , H01L29/66545 , H01L29/7782
Abstract: PURPOSE: A germanium silicon modulation doped field effect transistor(MODFET) using a metal-oxide layer gate is provided to improve a linear characteristic of a hetero-junction complementary metal oxide semiconductor(CMOS), by using a hetero junction structure of SiGe/C and SiGe/Si. CONSTITUTION: A buffering thin film made of silicon is grown on a silicon substrate. A SiGe channel layer and a silicon cap layer are formed on the buffering thin film. A low temperature buffer layer and a SiGe buffer layer are grown on the silicon substrate by a low temperature process. A defect caused by lattice mismatch applied from the silicon substrate to an epi layer is artificially formed.
Abstract translation: 目的：提供使用金属氧化物层栅极的锗硅调制掺杂场效应晶体管（MODFET），以通过使用SiGe / C的异质结结构来改善异质结互补金属氧化物半导体（CMOS）的线性特性 和SiGe / Si。 构成：在硅衬底上生长由硅制成的缓冲薄膜。 在缓冲薄膜上形成SiGe沟道层和硅覆盖层。 通过低温工艺在硅衬底上生长低温缓冲层和SiGe缓冲层。 人造地形成从硅衬底施加到外延层的晶格失配引起的缺陷。
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