公开(公告)号：US09266717B2

公开(公告)日：2016-02-23

申请号：US14207419

申请日：2014-03-12

Applicant: Versana Micro Inc.

Inventor： Bishnu Prasanna Gogoi

IPC: B81B7/02 ,  H01L27/14 ,  H01L27/22 ,  H01L27/16 ,  H05K7/02 ,  H01L41/113

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

Abstract translation: 公开了一种具有间接传感器和形成在公共半导体衬底上的直接传感器的集成电路。 直接传感器需要测量的参数直接应用于直接传感器。 相反，间接传感器可以将被测量的参数间接地应用于间接传感器。 由直接传感器测量的参数与由间接传感器测量的参数不同。 换句话说，直接传感器和间接传感器是不同的类型。 直接传感器的一个例子是压力传感器。 由压力传感器测量的压力必须应用于压力传感器。 间接传感器的一个例子是加速度计。 速度变化率不必直接应用于加速度计。 在一个实施例中，使用光刻技术形成直接和间接传感器。

公开(公告)号：US20140268524A1

公开(公告)日：2014-09-18

申请号：US14207477

申请日：2014-03-12

Applicant: BISHNU PRASANNA GOGOI

Inventor： BISHNU PRASANNA GOGOI

IPC: H05K7/02

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. An example of a distributed sensor system comprises a first sensor node and a second sensor node. Each sensor node has a plurality of sensors or a MIMS device. Each sensor node can also include electronic circuitry or a power source. A joint region is coupled between a first flexible interconnect region and a second flexible interconnect region. The first sensor node is coupled to the first flexible interconnect region. Similarly, the second sensor node is coupled to the second flexible interconnect region.

Abstract translation: 公开了一种在操作环境中提供空间和时间数据的分布式传感器系统。 分布式传感器节点可以耦合在一起以形成分布式传感器系统。 例如，分布式传感器系统包括物理耦合并且能够以分布式方式收集关于环境的数据的传感器节点（SN）的集合。 分布式传感器系统的示例包括第一传感器节点和第二传感器节点。 每个传感器节点具有多个传感器或MIMS装置。 每个传感器节点还可以包括电子电路或电源。 联接区域耦合在第一柔性互连区域和第二柔性互连区域之间。 第一传感器节点耦合到第一柔性互连区域。 类似地，第二传感器节点耦合到第二柔性互连区域。

公开(公告)号：US20140264658A1

公开(公告)日：2014-09-18

申请号：US14207433

申请日：2014-03-12

Applicant: BISHNU PRASANNA GOGOI

Inventor： BISHNU PRASANNA GOGOI

IPC: H01L27/02 ,  H01L27/16

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A cell phone is provided having multiple sensors configured to detect and measure different parameters of interest. The cell phone includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The cell phone couples a first parameter to be measured directly to the direct sensor. Conversely, the cell phone can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the cell phone by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

Abstract translation: 提供了具有多个传感器的蜂窝电话，该传感器被配置为检测和测量不同的感兴趣的参数。 手机包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 手机将要直接测量的第一个参数耦合到直接传感器。 相反，手机可以间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上而将其它传感器添加到手机。 这支持集成多个传感器，如麦克风，加速度计和温度传感器，以降低成本，复杂性，简化组装，同时提高性能。

公开(公告)号：US20140053966A1

公开(公告)日：2014-02-27

申请号：US13688714

申请日：2012-11-29

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Stephen H. Black ,  Thomas A. Kocian ,  Adam M. Kennedy

IPC: B05D5/06

CPC classification number: B81C1/00325 ,  B05D5/061 ,  B81B7/0067 ,  B81B2201/0207 ,  B81C2203/0118

Abstract: Methods for reducing wafer bow induced by an anti-reflective coating of a cap wafer are provided. The method may utilize a shadow mask having at least one opening therein that is positioned opposite recessed regions in a cap wafer. The method may further include depositing at least one layer of an anti-reflective coating material through the shadow mask onto a planar side of a cap wafer to provide a discontinuous coating on the planar side.

Abstract translation: 提供了通过盖晶片的抗反射涂层引起的减少晶片弓的方法。 该方法可以利用其中具有至少一个开口的荫罩，其位于帽晶片中的相对凹陷区域。 该方法还可以包括将至少一层抗反射涂层材料通过荫罩沉积到盖晶片的平面侧上，以在平面侧上提供不连续的涂层。

公开(公告)号：US20130112876A1

公开(公告)日：2013-05-09

申请号：US13670892

申请日：2012-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-hyun NAM ,  Hae-seok PARK

IPC: G01J5/12

CPC classification number: G01J5/12 ,  B81B2201/0207 ,  G01J5/024 ,  G01J5/0285 ,  G01J5/045 ,  G01J5/046 ,  G01J5/06 ,  G01J5/0853

Abstract: In some example embodiments, an infrared detector may comprise a substrate; a resonator spaced apart from the substrate, the resonator absorbing incident infrared light; a thermoelectric material layer contacting the resonator and having a variable resistance according to temperature variation due to the absorbed incident infrared light; a lead wire electrically connecting the thermoelectric material layer and the substrate; a heat separation layer between the substrate and the thermoelectric material layer, the heat separation layer preventing heat from being transferred from the thermoelectric material layer to the substrate; and/or a ground plane layer preventing the incident infrared light from proceeding toward the substrate. The heat separation layer may at least reduce heat transfer from the thermoelectric material layer to the substrate. The ground plane layer may at least reduce an amount of the incident infrared light that reaches the substrate.

Abstract translation: 在一些示例性实施例中，红外检测器可以包括基底; 谐振器，其与所述衬底间隔开，所述谐振器吸收入射的红外光; 接触谐振器的热电材料层，并且由于吸收的入射红外光而具有根据温度变化的可变电阻; 电连接所述热电材料层和所述基板的引线; 在所述基板和所述热电材料层之间的热分离层，所述热分离层防止热量从所述热电材料层转移到所述基板; 和/或防止入射的红外光向衬底延伸的接地层。 热分离层可以至少减少从热电材料层到基底的热传递。 接地层可以至少减少到达基板的入射红外光的量。

公开(公告)号：US08004162B2

公开(公告)日：2011-08-23

申请号：US12545524

申请日：2009-08-21

Applicant: Nobuyuki Koike ,  Takashi Tamura

Inventor： Nobuyuki Koike ,  Takashi Tamura

IPC: H01L41/08

CPC classification number: B81B3/0081 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81B2201/032 ,  G01C19/56 ,  G01C25/00 ,  H01L41/0933 ,  H01L41/1132 ,  H01L41/1136 ,  H01L41/316 ,  Y10T29/42

Abstract: A piezoelectric device is provided and includes a substrate, a first electrode film, a piezoelectric film, and a second electrode film. The first electrode film is formed on the substrate. The piezoelectric film is represented by Pb1+X(ZrYTi1−Y)O3+X(0≦X≦0.3, 0≦Y≦0.55) and a peak intensity of a pyrochlore phase measured by an X-ray diffraction method is 10% or less with respect to a sum of peak intensities of a (100) plane orientation, a (001) plane orientation, a (110) plane orientation, a (101) plane orientation, and a (111) plane orientation of a perovskite phase, the piezoelectric film being formed on the first electrode film with a film thickness of 400 nm or more and 1,000 nm or less. The second electrode film is laminated on the piezoelectric film.

Abstract translation: 提供一种压电装置，包括基板，第一电极膜，压电膜和第二电极膜。 第一电极膜形成在基板上。 压电薄膜由Pb1 + X（ZrYTi1-Y）O3 + X（0＆nlE; X＆lt; NlE; 0.3,0＆nlE; Y＆nlE; 0.55）表示，通过X射线衍射法测得的烧绿石相的峰强度为10％ 相对于钙钛矿相的（100）面取向，（001）面取向，（110）面取向，（101）面取向和（111）面取向的峰值强度之和小， 所述压电膜形成在所述第一电极膜上，膜厚度为400nm以上且1000nm以下。 第二电极膜层叠在压电膜上。

公开(公告)号：US06787387B2

公开(公告)日：2004-09-07

申请号：US10601470

申请日：2003-06-23

Applicant: Kimiya Ikushima ,  Hiroyoshi Komobuchi ,  Mikiya Uchida

Inventor： Kimiya Ikushima ,  Hiroyoshi Komobuchi ,  Mikiya Uchida

IPC: H01L2100

CPC classification number: G01J5/20 ,  B81B3/0072 ,  B81B2201/0207 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C1/00801 ,  B81C2201/0109 ,  B81C2201/014 ,  G01F1/6845 ,  G01J5/023 ,  G01J5/024 ,  G01J5/045 ,  G01J5/10 ,  G01J5/34

Abstract: A method for fabricating an electronic device includes the steps of: preparing a cavity defining sacrificial layer, at least the upper surface of which is covered with an etch stop layer; forming at least one first opening in the etch stop layer, thereby partially exposing the surface of the cavity defining sacrificial layer; etching the cavity defining sacrificial layer through the first opening, thereby defining a provisional cavity under the etch stop layer and a supporting portion that supports the etch stop layer thereon; and etching away a portion of the etch stop layer, thereby defining at least one second opening that reaches the provisional cavity through the etch stop layer and expanding the provisional cavity into a final cavity.

公开(公告)号：US20040053435A1

公开(公告)日：2004-03-18

申请号：US10601470

申请日：2003-06-23

Applicant: Matsushita Electric Industrial Co., Ltd.

Inventor： Kimiya Ikushima ,  Hiroyoshi Komobuchi ,  Mikiya Uchida

IPC: H01L021/00

CPC classification number: G01J5/20 ,  B81B3/0072 ,  B81B2201/0207 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C1/00801 ,  B81C2201/0109 ,  B81C2201/014 ,  G01F1/6845 ,  G01J5/023 ,  G01J5/024 ,  G01J5/045 ,  G01J5/10 ,  G01J5/34

Abstract: A method for fabricating an electronic device includes the steps of: preparing a cavity defining sacrificial layer, at least the upper surface of which is covered with an etch stop layer; forming at least one first opening in the etch stop layer, thereby partially exposing the surface of the cavity defining sacrificial layer; etching the cavity defining sacrificial layer through the first opening, thereby defining a provisional cavity under the etch stop layer and a supporting portion that supports the etch stop layer thereon; and etching away a portion of the etch stop layer, thereby defining at least one second opening that reaches the provisional cavity through the etch stop layer and expanding the provisional cavity into a final cavity.

Abstract translation: 一种制造电子器件的方法包括以下步骤：制备限定牺牲层的空腔，其至少其上表面被蚀刻停止层覆盖; 在蚀刻停止层中形成至少一个第一开口，从而部分地暴露限定牺牲层的空腔的表面; 蚀刻通过所述第一开口限定牺牲层的所述腔，从而在所述蚀刻停止层下方限定临时空腔，以及在其上支撑所述蚀刻停止层的支撑部分; 并且蚀刻掉蚀刻停止层的一部分，从而限定通过蚀刻停止层到达临时腔的至少一个第二开口，并将临时空腔膨胀成最终空腔。

公开(公告)号：KR1020160018789A

公开(公告)日：2016-02-17

申请号：KR1020167000627

申请日：2014-07-08

Applicant: 레이던 컴퍼니

Inventor： 구치,롤랜드,더블유. ,  디엡,부,큐. ,  케네디,애덤,엠. ,  블랙,스티븐,에이치. ,  코시안,토마스,에이.

IPC: H01L23/10 ,  H01L23/26 ,  H01L23/498 ,  H01L27/146 ,  H01L21/52 ,  H01L21/768 ,  B81B7/00 ,  B81C1/00

CPC classification number: H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: 전자디바이스및 그제조방법들. 하나이상의방법들은공동및 공동을둘러싸는표면을갖는뚜껑웨이퍼와, 검출기디바이스및 레퍼런스디바이스를갖는디바이스웨이퍼를제공하는단계를포함할수 있다. 특정예들에서, 티타늄물질의솔더배리어층은뚜껑웨이퍼의표면위에피착될수 있다. 티타늄물질의솔더배리어층은또한게터로서기능하기위해활성화될수 있다. 다양한예들에서, 뚜껑웨이퍼와디바이스웨이퍼는솔더를이용하여결합될수 있고, 티타늄물질의솔더배리어층은솔더가뚜껑웨이퍼의표면에접촉하는것을방지할수 있다.

Abstract translation: 电子装置及其制造方法。 一种或多种方法可以包括提供具有空腔和围绕空腔的表面的盖晶片和具有检测器装置和参考装置的装置晶片。 在某些实例中，可以将钛材料的阻焊层沉积到盖晶片的表面上。 可以进一步激活钛材料的阻焊层作为吸气剂。 在各种示例中，盖晶片和器件晶片可以使用焊料接合在一起，并且钛材料的阻焊层可以防止焊料接触盖晶片的表面。

公开(公告)号：KR1020120029527A

公开(公告)日：2012-03-27

申请号：KR1020100091361

申请日：2010-09-17

Applicant: 호서대학교 산학협력단

Inventor： 천창환 ,  박승만 ,  한창석 ,  한승오 ,  전규상

IPC: H04N5/335 ,  G01J1/44 ,  H01L31/10

CPC classification number: G01J1/4228 ,  B81B2201/0207 ,  H01L27/14643

Abstract: PURPOSE: An integrated visible and long wavelength infrared image detector is provided to prevent the penetration of infrared ray due to a thick doping silicon. CONSTITUTION: A visible ray sensing unit(110) detects visible light of an incoming light. A far-infrared radiation sensing unit(120) detects the infrared ray of the incoming light. An IC(Integrated Circuit) layer(130) forms base layers of the visible ray sensing unit and infrared ray detector. The IC circuit layer embodies an image based on the sensing signal which is obtained by the visible ray sensing unit and the infrared ray sensing unit.

Abstract translation: 目的：提供集成的可见光和长波长红外图像检测器，以防止由于厚掺杂硅而导致的红外线的穿透。 构成：可见光线感测单元（110）检测入射光的可见光。 远红外线辐射检测单元（120）检测入射光的红外线。 IC（集成电路）层（130）形成可见光线感测单元和红外线检测器的基层。 IC电路层基于由可见光感测单元和红外线感测单元获得的感测信号来体现图像。