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    METHOD OF FABRICATING A MICRO MACHINED CHANNEL
    93.
    发明申请
    METHOD OF FABRICATING A MICRO MACHINED CHANNEL 审中-公开

    公开(公告)号：WO2019054873A1

    公开(公告)日：2019-03-21

    申请号：PCT/NL2018/050610

    申请日：2018-09-17

    Applicant: BERKIN B.V.

    Inventor： ZHAO, Yiyuan ,  VELTKAMP, Henk-Willem ,  ZENG, Yaxiang ,  LOTTERS, Joost Conrad ,  WIEGERINK, Remco John

    IPC: B81C1/00

    CPC classification number: B81C1/00071 ,  B81B2201/0214 ,  B81B2201/0242 ,  B81B2201/0292 ,  B81B2201/058 ,  B81C2201/0112 ,  B81C2201/014 ,  B81C2201/0181

    Abstract: The invention relates to a method of fabricating a micro machined channel, comprising the steps of providing a substrate of a first material and having a buried layer of a different material therein, and forming at least two trenches in said substrate by removing at least part of said substrate. Said trenches are provided at a distance from each other and at least partly extend substantially parallel to each other, as well as towards said buried layer. The method comprises the step of forming at least two filled trenches by providing a second material different from said first material and filling said at least two trenches with at least said second material; forming an elongated cavity in between said filled trenches by removing at least part of said substrate extending between said filled trenches; and forming an enclosed channel by providing a layer of material in said cavity and enclosing said cavity.

    METHOD FOR THE PRODUCTION OF A MICROMECHANICAL COMPONENT COMPRISING A THROUGH-HOLE, COMPONENT PRODUCED USING SAID METHOD, AND USE THEREOF
    95.
    发明申请
    METHOD FOR THE PRODUCTION OF A MICROMECHANICAL COMPONENT COMPRISING A THROUGH-HOLE, COMPONENT PRODUCED USING SAID METHOD, AND USE THEREOF 审中-公开
    用于生产微机械结构与取得的程序或组件持续，开幕 ITS USE

    公开(公告)号：WO2010060684A3

    公开(公告)日：2011-02-24

    申请号：PCT/EP2009063469

    申请日：2009-10-15

    Applicant: BOSCH GMBH ROBERT ,  AHLES MARCUS ,  BENZEL HUBERT ,  WEBER HERIBERT

    Inventor： AHLES MARCUS ,  BENZEL HUBERT ,  WEBER HERIBERT

    IPC: B81C1/00

    CPC classification number: G01L9/0042 ,  B81B2203/0353 ,  B81C1/00087 ,  B81C1/00309 ,  B81C2201/0112 ,  B81C2201/014 ,  B81C2203/0118

    Abstract: The invention relates to a method for producing a micromechanical component, the component produced using said method, and a use of the micromechanical component during the production of a micromechanical sensor component. In order to produce the micromechanical component, a first structured layer is first produced on the front side of a semiconductor wafer, and the semiconductor wafer is etched from the front side using a first trench etching step in accordance with said first structured layer. A second structured layer is then applied to the rear side of the semiconductor wafer, and the semiconductor wafer is etched from the rear side using a second trench etching step in accordance with the second structured layer. The invention is characterized in that a through-hole from the front side to the rear side is produced in the semiconductor wafer using the first and the second trench etching step.

    Abstract translation: 本发明描述了一种用于制造微机械装置，通过该方法和生产的微机械传感器装置的使用微机械部件的制造的装置的方法。 为了制造微机械部件的最初产生在半导体晶片的前侧上的第一图案化层，在其依赖由第一Trenchätzschritts从正面侧的半导体晶片的装置进行蚀刻。 然后将第二图案化层被施加在半导体晶片的背面通过第二Trenchätzschritts从背面对半导体晶片的装置在它们的依赖性被蚀刻。 本发明的本质在于，在所述半导体晶片通过所述第一和第二Trenchätzschritts而形成从前方到后方的连续开口。

    METHOD AND APPARATUS FOR ETCHING
    96.
    发明申请
    METHOD AND APPARATUS FOR ETCHING 审中-公开
    用于蚀刻的方法和装置

    公开(公告)号：WO2010141257A2

    公开(公告)日：2010-12-09

    申请号：PCT/US2010/035959

    申请日：2010-05-24

    Applicant: APPLIED MATERIALS, INC. ,  CHESHIRE, Alan

    Inventor： CHESHIRE, Alan

    IPC: C23F4/04 ,  H01L21/3065

    CPC classification number: B81C1/00531 ,  B81C2201/0112 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/30655

    Abstract: Embodiments of the invention relate to a substrate etching method and apparatus. In one embodiment, a method for etching a substrate in a plasma etch reactor is provided that includes a) depositing a polymer on a substrate in an etch reactor, b) etching the substrate using a gas mixture including a fluorine-containing gas and oxygen in the etch reactor, c) etching a silicon-containing layer the substrate using a fluorine-containing gas without mixing oxygen in the etch reactor, and d) repeating a), b) and c) until an endpoint of a feature etched into the silicon-containing layer is reached.

    Abstract translation: 本发明的实施例涉及一种基板蚀刻方法和装置。 在一个实施例中，提供了一种在等离子体蚀刻反应器中蚀刻衬底的方法，其包括：a）在蚀刻反应器中在衬底上沉积聚合物，b）使用包含含氟气体和氧的气体混合物蚀刻衬底 蚀刻反应器，c）使用含氟气体在含氧气体中蚀刻含硅层，而不在蚀刻反应器中混合氧，以及d）重复a），b）和c），直到蚀刻到硅中的特征的端点 到达层。

    FLUID PATHS IN ETCHABLE MATERIALS
    98.
    发明申请
    FLUID PATHS IN ETCHABLE MATERIALS 审中-公开
    可蚀刻材料中的流体路径

    公开(公告)号：WO2008067206A3

    公开(公告)日：2008-11-27

    申请号：PCT/US2007085086

    申请日：2007-11-19

    Applicant: BIOSCALE INC ,  MILLER MICHAEL ,  MASTERS BRETT P ,  SCHMIDT MARTIN

    Inventor： MILLER MICHAEL ,  MASTERS BRETT P ,  SCHMIDT MARTIN

    IPC: B01L3/00 ,  B81C1/00

    CPC classification number: B81C1/00714 ,  B81B2201/058 ,  B81B2203/033 ,  B81C2201/0112

    Abstract: The invention relates to fluid paths in etchable materials. Fluid paths are formed by forming a cavity through a substrate material with a first dry removal process to produce a first surface of the cavity. The first surface of the cavity is associated with a first roughness. The first surface of the cavity is etched with a second wet removal process to reduce the first roughness and produce a second roughness associated with the first surface of the cavity. A coating is applied to the first surface of the cavity to produce a second surface to improve wettability of the first or second surface of the cavity, reduce in size or number gas nucleation sites in the first or second surface of the cavity, reduce the amount of debris associated with the first roughness carried by the fluid flow, and/or improve hydrophilicity of the first or second surface.

    Abstract translation: 本发明涉及可蚀刻材料中的流体路径。 流体路径通过利用第一干法去除工艺形成穿过基底材料的腔来形成，以产生腔的第一表面。 空腔的第一表面与第一粗糙度相关联。 用第二湿去除工艺蚀刻腔的第一表面以减小第一粗糙度并产生与腔的第一表面相关的第二粗糙度。 将涂层施加到空腔的第一表面以产生第二表面以改善空腔的第一或第二表面的润湿性，减小空腔的第一或第二表面中的气体成核位置的尺寸或数量， 与由流体流携带的第一粗糙度相关的碎片，和/或改善第一或第二表面的亲水性。

    MICROSTRUCTURES AND SINGLE MASK, SINGLE-CRYSTAL PROCESS FOR FABRICATION THEREOF
    99.
    发明申请
    MICROSTRUCTURES AND SINGLE MASK, SINGLE-CRYSTAL PROCESS FOR FABRICATION THEREOF 审中-公开
    微结构和单一掩模，其制造的单晶工艺

    公开(公告)号：WO1994018697A1

    公开(公告)日：1994-08-18

    申请号：PCT/US1993011584

    申请日：1993-12-03

    Applicant: CORNELL RESEARCH FOUNDATION, INC.

    Inventor： CORNELL RESEARCH FOUNDATION, INC. ,  SHAW, Kevin, A. ,  ZHANG, Z., Lisa ,  MACDONALD, Noel, C.

    IPC: H01L21/44

    CPC classification number: B81C1/00619 ,  B81C1/00142 ,  B81C1/0015 ,  B81C1/00626 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/053 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10S73/01 ,  Y10S148/05

    Abstract: The invention provides a single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independent of crystal orientation. A dielectric mask (12) on a single-crystal substrate (154) is patterned to define isolating trenches. A protective conformal layer (28) is applied to the resultant structure. The conformal layer (28) on the floor of the trenches is removed and a second etch deepens the trench to expose the mesa walls which are removed during the release step by isotropic etching. A metal layer (44) is formed on the resultant structure providing opposed plates (156) and (158) of a capacitor. The cantilever beam (52) with the supporting end wall (152) extends the grid-like structure (150) into the protection of the deepened isolation trenches (54). A membrane can be added to the released structures to increase their weight for use in accelerometers, and polished for use as movable mirrors.

    Abstract translation: 本发明提供单独的掩模，低温反应离子蚀刻工艺，用于制造高纵横比，独立于晶体取向的释放的单晶微机电结构。 将单晶衬底（154）上的介电掩模（12）图案化以限定隔离沟槽。 将保护性保形层（28）施加到所得结构。 去除沟槽底板上的共形层（28），并且第二蚀刻加深沟槽以暴露在释放步骤期间通过各向同性蚀刻去除的台面壁。 在所得结构上形成金属层（44），从而提供电容器的相对的板（156）和（158）。 具有支撑端壁（152）的悬臂梁（52）将格栅状结构（150）延伸到加深的隔离沟槽（54）的保护中。 可以向释放的结构添加膜以增加其用于加速度计的重量，并抛光用作可动反射镜。

    METHOD FOR MANUFACTURING MIRROR DEVICE
    100.
    发明公开
    METHOD FOR MANUFACTURING MIRROR DEVICE 审中-公开

    公开(公告)号：US20240092634A1

    公开(公告)日：2024-03-21

    申请号：US17766770

    申请日：2020-08-24

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Daiki SUZUKI ,  Takahiro MATSUMOTO ,  Tomoyuki IDE ,  Mikito TAKAHASHI

    IPC: B81C1/00 ,  G02B26/08

    CPC classification number: B81C1/00142 ,  B81C1/00952 ,  G02B26/0833 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133

    Abstract: A method for manufacturing a mirror device, the method includes a first step of preparing a wafer having a support layer, a device layer, and an intermediate layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer, the device layer, and the intermediate layer from the wafer and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a part of the intermediate layer is removed from the wafer by anisotropic etching.

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