公开(公告)号：US09824859B1

公开(公告)日：2017-11-21

申请号：US14980884

申请日：2015-12-28

Applicant: Multibeam Corporation

Inventor： Michael C. Smayling ,  Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC: H01J37/30 ,  H01J37/317 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/244

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

公开(公告)号：US20170210621A1

公开(公告)日：2017-07-27

申请号：US15500430

申请日：2015-07-14

Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V

Inventor： Felix Schiebel ,  Christoph Eberl ,  Matthew Berwind ,  Peter Gumbsch

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00373 ,  B29C64/135 ,  B33Y10/00 ,  B33Y80/00 ,  B81B7/0074 ,  B81B2201/038 ,  B81B2201/047 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81C3/001 ,  B81C99/0095 ,  B81C2201/0188 ,  B81C2203/038

Abstract: A method for producing micromechanical components is provided. A liquid starting material which can be cured by means of irradiation is applied onto a substrate. A partial volume of the starting material is cured by means of a local irradiation process using a first radiation source in order to produce at least one three-dimensional structure. The three-dimensional structure delimits at least one closed cavity in which at least one part of the liquid starting material is enclosed. Alternatively or in addition, a micromechanical component is provided that contains a liquid starting material, which is partly cured by means of irradiation, and at least one cavity in which the liquid starting material is enclosed.

公开(公告)号：US09593012B2

公开(公告)日：2017-03-14

申请号：US14774799

申请日：2014-03-12

Applicant: Robert Bosch GmbH

Inventor： Friedjof Heuck ,  Christoph Schelling

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81C1/00412 ,  B81C2201/0177 ,  B81C2201/0188

Abstract: A method for producing a micromechanical component includes providing a substrate with a monocrystalline starting layer which is exposed in structured regions. The structured regions have an upper face and lateral flanks, wherein a catalyst layer, which is suitable for promoting a silicon epitaxial growth of the exposed upper face of the structured monocrystalline starting layer, is provided on the upper face, and no catalyst layers are provided on the flanks. The method also includes carrying out a selective epitaxial growth process on the upper face of the monocrystalline starting layer using the catalyst layer in a reactive gas atmosphere in order to form a micromechanical functional layer.

Abstract translation: 微机械部件的制造方法包括向基板提供暴露在结构化区域中的单晶起始层。 结构化区域具有上表面和侧面，其中在上表面上设置适合于促进结构单晶起始层暴露的上表面的硅外延生长的催化剂层，并且不提供催化剂层 在侧面。 该方法还包括在反应气体气氛中使用催化剂层在单晶起始层的上表面上进行选择性外延生长工艺，以形成微机械功能层。

公开(公告)号：US20170050844A1

公开(公告)日：2017-02-23

申请号：US14827683

申请日：2015-08-17

Applicant: Texas Instruments Incorporated

Inventor： John Charles Ehmke ,  Virgil Cotoco Ararao

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00293 ,  B81C2201/0108 ,  B81C2201/013 ,  B81C2201/0188 ,  B81C2201/0198 ,  B81C2201/053 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  B82Y30/00 ,  G02B6/4204 ,  G02B6/4208 ,  G02B6/4248 ,  G02B26/001 ,  G02B26/0833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/039 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05109 ,  H01L2224/05123 ,  H01L2224/05138 ,  H01L2224/05163 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05562 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/279 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29109 ,  H01L2224/29144 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01074 ,  H01L2924/1461 ,  H01L2924/164 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/03 ,  H01L2924/01042 ,  H01L2924/01072 ,  H01L2924/01004 ,  H01L2224/83 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03462

Abstract: A hermetic package comprising a substrate (110) having a surface with a MEMS structure (101) of a first height (101a), the substrate hermetically sealed to a cap (120) forming a cavity over the MEMS structure; the cap attached to the substrate surface by a vertical stack (130) of metal layers adhering to the substrate surface and to the cap, the stack having a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance (140); the stack having a bottom first metal seed film (131a) adhering to the substrate and a bottom second metal seed film (131b) adhering to the bottom first seed film, both seed films of a first width (131c) and a common sidewall (138); further a top first metal seed film (132a) adhering to the cap and a top second metal seed film (132b) adhering to the top first seed film, both seed films with a second width (132c) smaller than the first width and a common sidewall (139); the bottom and top metal seed films tied to a metal layer (135) including gold-indium intermetallic compounds, layer (135) having a second height (133a) greater than the first height and encasing the seed films and common sidewalls.

Abstract translation: 一种密封包装，其包括具有具有第一高度（101a）的MEMS结构（101）的表面的基底（110），所述基底被气密地密封到在所述MEMS结构上形成空腔的帽（120） 所述盖通过粘附到所述基板表面和所述盖的金属层的垂直堆叠（130）附接到所述基板表面，所述堆叠具有围绕所述MEMS结构的连续轮廓，同时与所述MEMS结构隔开距离（140）; 所述堆叠具有附着到所述基板的底部第一金属种子膜（131a）和粘附到所述底部第一种子膜的底部第二金属种子膜（131b），具有第一宽度（131c）和公共侧壁（138）的两种种子膜 ）; 另外，粘附到盖的顶部第一金属种子膜（132a）和粘附到顶部第一种子膜的顶部第二金属种子膜（132b），具有小于第一宽度的第二宽度（132c）的两种种子膜和共同的 侧壁（139）; 连接到包括金 - 铟金属间化合物的金属层（135）的底部和顶部金属种子膜，具有大于第一高度的第二高度（133a）的层（135）并且包围种子膜和共同侧壁。

公开(公告)号：US09556521B1

公开(公告)日：2017-01-31

申请号：US14809985

申请日：2015-07-27

Applicant: Multibeam Corporation

Inventor： Theodore A. Prescop ,  Kevin M. Monahan ,  David K. Lam ,  Michael C. Smayling

IPC: C23C16/48 ,  H01J37/06 ,  H01J37/08 ,  H01J37/244 ,  H01J37/30

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

Abstract translation: 用于使用没有光掩模并且没有抗蚀剂层的带电粒子束来图案化衬底的方法，装置和系统。 材料可以沉积到衬底上，如设计布局数据库所指示的那样，被定位到由多个匹配的带电粒子束柱靶向的位置上。 减少工艺步骤的数量和消除光刻步骤在局部化材料添加中具有减少制造周期时间并通过降低缺陷引入概率来提高产量的双重优点。 此外，高度局部化的精密材料沉积允许沉积速率的受控变化并且能够创建3D结构。 局部气体注入器和检测器以及本地光子注入器和检测器对于相应的列是局部的，并且可以用于促进快速，准确，有针对性的高度可配置的衬底处理，有利地使用所述束柱的大阵列。

公开(公告)号：US09105841B2

公开(公告)日：2015-08-11

申请号：US13796496

申请日：2013-03-12

Applicant: International Business Machines Corporation

Inventor： William J. Gallagher ,  Eugene J. O'Sullivan ,  Naigang Wang

IPC: H01L21/00 ,  H01L43/14 ,  B81B3/00 ,  B81C1/00 ,  H01F41/04 ,  H01L49/02

CPC classification number: B81C1/00373 ,  B81B3/0021 ,  B81B2201/038 ,  B81B2203/0118 ,  B81C1/00142 ,  B81C1/00706 ,  B81C2201/0188 ,  H01F41/046 ,  H01L28/10 ,  H01L43/10 ,  H01L43/12 ,  H01L43/14

Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.

Abstract translation: 公开了一种微机电装置及其制造方法。 在硅衬底上形成牺牲层。 在牺牲层的顶表面上形成金属层。 将软磁性材料无电沉积在金属层上以制造微机电装置。 除去牺牲层以产生与硅衬底分离的金属束。

公开(公告)号：US09105800B2

公开(公告)日：2015-08-11

申请号：US14100048

申请日：2013-12-09

Applicant: Raytheon Company

Inventor： Roland Gooch ,  Thomas Allan Kocian ,  Buu Diep ,  Adam M. Kennedy ,  Stephen H. Black

IPC: H01L31/18 ,  H01L31/0232

CPC classification number: H01L31/18 ,  B81C1/00373 ,  B81C2201/0188 ,  H01L31/02327

Abstract: A method for forming a coating of material on selected portions of a surface of a substrate having a plurality of cavities, each cavity having outer, peripheral sidewalls extending outwardly from the surface. The method includes: providing a structure having a release agent thereon; contacting top surface of the wafer with the release agent to transfer portions of the release agent to the top surface of the wafer while bottom portions of the cavities remain spaced from the release agent to produce an intermediate structure; the release agent disposed on the top surface of the wafer and with the bottom portions of the cavities void of the release agent; exposing the intermediate structure to the material to blanket coat the material on both the release agent and the bottom portions of the cavities; and selectively removing the release agent together with the coating material while leaving the coating material on the bottom portions of the cavities.

Abstract translation: 一种用于在具有多个空腔的基板的表面的选定部分上形成材料涂层的方法，每个空腔具有从表面向外延伸的外部周边侧壁。 该方法包括：提供其上具有脱模剂的结构; 使所述晶片的顶表面与所述脱模剂接触以将所述脱模剂的部分转移到所述晶片的顶表面，同时所述空腔的底部保持与所述脱模剂间隔开以产生中间结构; 所述脱模剂设置在所述晶片的顶表面上，并且所述空腔的底部部分脱离所述脱模剂; 将所述中间结构暴露于所述材料以在所述空腔的所述脱模剂和所述底部两者上均匀地涂覆所述材料; 并且与涂料一起选择性地除去脱模剂，同时将涂料留在空腔的底部。

公开(公告)号：US09023165B2

公开(公告)日：2015-05-05

申请号：US12999829

申请日：2008-06-23

Applicant: David P. Brown ,  Andrei Ollikainen ,  Esko I. Kauppinen ,  Albert G. Nasibulin ,  Jussi Heikkonen

Inventor： David P. Brown ,  Andrei Ollikainen ,  Esko I. Kauppinen ,  Albert G. Nasibulin ,  Jussi Heikkonen

IPC: B44C1/165 ,  C01B31/02 ,  B81C1/00 ,  C04B14/02 ,  C04B30/02 ,  C04B111/00

CPC classification number: B81C1/00357 ,  B81C1/00373 ,  B81C1/00476 ,  B81C1/00492 ,  B81C2201/0187 ,  B81C2201/0188 ,  B81C2201/0194 ,  C01B32/15 ,  C01B32/168 ,  C01P2004/13 ,  C01P2004/16 ,  C04B14/026 ,  C04B30/02 ,  C04B2111/00844 ,  C04B2111/00853 ,  Y10T428/24802

Abstract: A method for the production of a fibrous network-substrate component includes the steps of providing a network of fibrous material (1) on a preliminary substrate (2) by filtering high aspect ratio molecular structures (HARM-structures) from gas flow, placing the network of fibrous material (1) on the preliminary substrate (2) in proximity to a secondary substrate (3), applying a force to the network of fibrous material (1) to preferably attract the network of fibrous material (1) from the preliminary substrate (2) to the secondary substrate (3) in order to transfer the network of fibrous material (1) from the preliminary substrate (2) to the secondary substrate (3), and removing the preliminary substrate (2) from the network of fibrous material (1).

Abstract translation: 制造纤维网状基材成分的方法包括以下步骤：通过从气流中过滤高纵横比分子结构（HARM-结构），在预备基材（2）上提供纤维材料网（1），将 在初级衬底（2）上靠近次级衬底（3）的纤维材料（1）的网络，向纤维材料（1）的网络施加力以优选地将纤维材料（1）的网络从初步 为了将纤维材料（1）的网络从预备衬底（2）传送到第二衬底（3），将衬底（2）连接到第二衬底（3），并从初始衬底（2）的网络 纤维材料（1）。

公开(公告)号：US20130196504A1

公开(公告)日：2013-08-01

申请号：US13879803

申请日：2011-11-18

Applicant: Toshinori Ogashiwa ,  Masaaki Kurita ,  Takashi Nishimori ,  Yukio Kanehira

Inventor： Toshinori Ogashiwa ,  Masaaki Kurita ,  Takashi Nishimori ,  Yukio Kanehira

IPC: H01L21/48

CPC classification number: H01L21/4885 ,  B22F7/08 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2101/40 ,  B81C1/00095 ,  B81C1/00373 ,  B81C2201/0188 ,  B81C2201/0194 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/11

Abstract: The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 μm to 1.0 μm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300° C.

Abstract translation: 本发明提供一种用于将金属布线材料转印到转印接收对象的转印基板，所述转印基板包括基板，形成在所述基板上的至少一种金属布线材料和形成在所述基板和所述金属布线之间的下面的金属膜 材料，其中金属布线材料是通过烧结制备的模制品，例如纯度为99.9重量％以上的金粉末和0.01μm至1.0μm的平均粒度，并且下面的金属膜由金属 如金或合金。 转印基板即使在80〜300℃的转印接收对象的加热温度下也能够将金属配线材料转印到转印接收体。

公开(公告)号：US20130029480A1

公开(公告)日：2013-01-31

申请号：US13639221

申请日：2011-04-05

Applicant: Frank Niklaus ,  Andreas Fischer

Inventor： Frank Niklaus ,  Andreas Fischer

IPC: H01L21/20 ,  H01L21/205

CPC classification number: B81C1/00373 ,  B33Y10/00 ,  B33Y70/00 ,  B81C2201/0143 ,  B81C2201/0188 ,  B82Y20/00

Abstract: A method of making a three-dimensional structure in semiconductor material includes providing a substrate (20) is provided having at least a surface including semiconductor material. Selected areas of the surface of the substrate are exposed to a focussed ion beam whereby the ions are implanted in the semiconductor material in the selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focussed ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure (30) defined by the focussed ion beam is etched away so as to provide a three-dimensional structure on the substrate (20).

Abstract translation: 在半导体材料中制造三维结构的方法包括提供至少具有包括半导体材料的表面的基底（20）。 将基板的表面的选定区域暴露于聚焦的离子束，由此将离子注入到所选择的区域中的半导体材料中。 选自由单晶，多晶或非晶半导体材料组成的组的几层材料沉积在衬底表面上，并且在沉积之间聚焦离子束以暴露表面以便限定三维结构 。 不会被聚焦的离子束限定的最终结构（30）的部分的材料被蚀刻掉，以便在衬底（20）上提供三维结构。