Abstract:
An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a carbon-based body to a thickness greater than 20 micrometers, subsequently removing the substrate and then applying an electrical contact to one surface of the body. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes. The surface of the substrate may be patterned before growth of the carbon-based body to produce a patterned surface on the field emission device after the substrate is removed.
Abstract in simplified Chinese:本发明系关于一种场发射阴极,该场发射阴极包含至少部分导电基底结构,及空间上分布于该基底结构处之复数个导电微米大小区段,其中该复数个微米大小区段之至少一部分各自具备复数个导电奈米结构。本发明之优点包括较低功率消耗,以及(例如)包含该场发射阴极之场发射照明配置之光输出增加。
Abstract:
A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.
Abstract:
A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.
Abstract:
An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.
Abstract:
An electron emission device includes a substrate, a first electrode on the substrate, a second electrode electrically insulated from the first electrode, a first insulating layer between the first electrode and the second electrode, an electron emission source hole in the first insulating layer and the second electrode to expose the first electrode, and an electron emission source having a first electron emission material layer on the first electrode in the electron emission source hole and a second electron emission material layer on the first electron emission material layer.
Abstract:
A method of forming an array of pointed structures comprises depositing a ferrofluid on a substrate, applying a magnetic field to the ferrofluid to generate an array of surface protrusions, and solidifying the surface protrusions to form the array of pointed structures. The pointed structures may have a tip radius ranging from approximately 10 nm to approximately 25 μm. Solidifying the surface protrusions may be carried out at a temperature ranging from approximately 10 degrees C. to approximately 30 degrees C.
Abstract:
An electron emission device includes a first plate and a second plate spaced apart and facing each other, a first electrode having an electron emission source electrically coupled thereto, the electron emission source including a carbon-based material and a ferroelectric material, a second electrode disposed adjacent to the first electrode, and a phosphor layer disposed so as to receive electrons emitted by the electron emission source.
Abstract:
An electron-emitting device includes an electroconductive member and a lanthanum boride layer on the electroconductive member and further includes an oxide layer between the electroconductive member and the lanthanum boride layer. The oxide layer can contain a lanthanum element. The lanthanum boride layer can be overlaid with a lanthanum oxide layer.
Abstract:
An electron emission source and a field emission device using the same. The diamond-like carbon (DLC) film used as the electron emission source is featured by its film structures formed on the substrate surface arranged in a petal pattern. The height of the DLC flake is in micro scale and the thickness of the flake is in nano scale. The disclosed DLC flake film has a high aspect ratio. Hence, the DLC film has a good enhancing factor favorable for field emission, acting as a good electron-emitting source. In addition, the electron-emitting source material disclosed can be applied in a field emission display to act as a stable electron-emitting source.