CARBON-BASED FIELD EMISSION ELECTRON DEVICE FOR HIGH CURRENT DENSITY APPLICATIONS
    91.
    发明申请
    CARBON-BASED FIELD EMISSION ELECTRON DEVICE FOR HIGH CURRENT DENSITY APPLICATIONS 审中-公开
    用于高电流密度应用的基于碳的场发射电子器件

    公开(公告)号:WO02029843A1

    公开(公告)日:2002-04-11

    申请号:PCT/US2000/027380

    申请日:2000-10-04

    Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a carbon-based body to a thickness greater than 20 micrometers, subsequently removing the substrate and then applying an electrical contact to one surface of the body. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes. The surface of the substrate may be patterned before growth of the carbon-based body to produce a patterned surface on the field emission device after the substrate is removed.

    Abstract translation: 通过将基板放置在反应器中,加热基板并将氢和含碳气体的混合物供应到反应器,同时向基板附近的气体混合物供应能量以提供长时间的能力,从而提供电子场发射装置 碳基体,其厚度大于20微米,随后除去基底,然后将电接触施加到身体的一个表面。 该器件是独立的,可用作各种电子器件如阴极射线管,放大器和行波管中的冷阴极。 在碳基体的生长之前,可以对衬底的表面进行图案化以在去除衬底之后在场发射器件上产生图案化表面。

    Electron emission device and method of manufacturing the same
    96.
    发明授权
    Electron emission device and method of manufacturing the same 失效
    电子发射装置及其制造方法

    公开(公告)号:US07965024B2

    公开(公告)日:2011-06-21

    申请号:US11790196

    申请日:2007-04-24

    Inventor: Kwang-Seok Jeong

    CPC classification number: H01J1/304 H01J9/025 H01J31/127 H01J2201/30446

    Abstract: An electron emission device includes a substrate, a first electrode on the substrate, a second electrode electrically insulated from the first electrode, a first insulating layer between the first electrode and the second electrode, an electron emission source hole in the first insulating layer and the second electrode to expose the first electrode, and an electron emission source having a first electron emission material layer on the first electrode in the electron emission source hole and a second electron emission material layer on the first electron emission material layer.

    Abstract translation: 电子发射器件包括衬底,衬底上的第一电极,与第一电极电绝缘的第二电极,第一电极和第二电极之间的第一绝缘层,第一绝缘层中的电子发射源孔和 第二电极,用于暴露第一电极;以及电子发射源,其在电子发射源孔中的第一电极上具有第一电子发射材料层,在第一电子发射材料层上具有第二电子发射材料层。

    Method of forming pointed structures
    97.
    发明授权
    Method of forming pointed structures 有权
    形成尖结构的方法

    公开(公告)号:US07935297B2

    公开(公告)日:2011-05-03

    申请号:US11370396

    申请日:2006-03-06

    Applicant: Diane E. Pugel

    Inventor: Diane E. Pugel

    Abstract: A method of forming an array of pointed structures comprises depositing a ferrofluid on a substrate, applying a magnetic field to the ferrofluid to generate an array of surface protrusions, and solidifying the surface protrusions to form the array of pointed structures. The pointed structures may have a tip radius ranging from approximately 10 nm to approximately 25 μm. Solidifying the surface protrusions may be carried out at a temperature ranging from approximately 10 degrees C. to approximately 30 degrees C.

    Abstract translation: 形成尖锐结构阵列的方法包括将铁磁流体沉积在基底上,向铁磁流体施加磁场以产生阵列的表面突起,并固化表面突起以形成尖锐结构的阵列。 尖的结构可以具有从大约10nm到大约25μm的尖端半径。 表面突起的固化可以在约10摄氏度至约30摄氏度的温度下进行。

    Electron emission source, electron emission device using the same, and composition for the same
    98.
    发明授权
    Electron emission source, electron emission device using the same, and composition for the same 失效
    电子发射源,使用其的电子发射装置及其组合物

    公开(公告)号:US07795794B2

    公开(公告)日:2010-09-14

    申请号:US11589790

    申请日:2006-10-31

    CPC classification number: H01J1/304 H01J2201/30446 H01J2201/306 H01J2329/00

    Abstract: An electron emission device includes a first plate and a second plate spaced apart and facing each other, a first electrode having an electron emission source electrically coupled thereto, the electron emission source including a carbon-based material and a ferroelectric material, a second electrode disposed adjacent to the first electrode, and a phosphor layer disposed so as to receive electrons emitted by the electron emission source.

    Abstract translation: 电子发射装置包括第一板和间隔开并彼此面对的第二板,具有与其电耦合的电子发射源的第一电极,电子发射源包括碳基材料和铁电材料,第二电极设置 邻近第一电极,以及荧光体层,其设置成接收由电子发射源发射的电子。

    Electron-emitting source and field emission display using the same
    100.
    发明申请
    Electron-emitting source and field emission display using the same 审中-公开
    电子发射源和场发射显示使用相同

    公开(公告)号:US20070290601A1

    公开(公告)日:2007-12-20

    申请号:US11651478

    申请日:2007-01-10

    CPC classification number: H01J1/304 H01J31/127 H01J2201/30446

    Abstract: An electron emission source and a field emission device using the same. The diamond-like carbon (DLC) film used as the electron emission source is featured by its film structures formed on the substrate surface arranged in a petal pattern. The height of the DLC flake is in micro scale and the thickness of the flake is in nano scale. The disclosed DLC flake film has a high aspect ratio. Hence, the DLC film has a good enhancing factor favorable for field emission, acting as a good electron-emitting source. In addition, the electron-emitting source material disclosed can be applied in a field emission display to act as a stable electron-emitting source.

    Abstract translation: 电子发射源和使用其的场发射装置。 用作电子发射源的类金刚石碳(DLC)膜的特征在于其形成在以花瓣图案布置的基板表面上的膜结构。 DLC薄片的高度为微尺度,薄片的厚度为纳米级。 所公开的DLC薄膜具有高的纵横比。 因此,DLC膜具有良好的增强因子,有利于场致发射,作为良好的电子发射源。 此外,所公开的电子发射源材料可以应用于场致发射显示器中以用作稳定的电子发射源。

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