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公开(公告)号：KR1020140033569A
公开(公告)日：2014-03-19
申请号：KR1020120097283
申请日：2012-09-03
Applicant: 성균관대학교산학협력단
CPC classification number: Y02B20/181
Abstract: The present invention relates to green phosphor, a method for manufacturing the same, and a white LED including the same. The green phosphor is represented in the below chemical formula 1. In the above chemical formula, M stands for metal chosen among Ba, Sr, Ca, Mg, and Zn, or a group combined from the same. Re includes more than one rare earth element chosen among the rare earth elements coated with boron. X is above 0.01 and below 0.3.
Abstract translation: 本发明涉及绿色荧光体，其制造方法以及包含该荧光体的白色LED。 绿色荧光体在下述化学式1中表示。在上述化学式中，M表示选自Ba，Sr，Ca，Mg和Zn中的金属或与之组合的金属。 Re包含多于一种稀土元素，选自涂有硼的稀土元素。 X在0.01以上且0.3以下。
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公开(公告)号：KR1020140031759A
公开(公告)日：2014-03-13
申请号：KR1020120098485
申请日：2012-09-05
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L29/0684 , B82Y10/00 , H01L21/02458 , H01L21/02472 , H01L21/02483 , H01L21/02488 , H01L21/02513 , H01L21/0254 , H01L21/02639 , H01L21/02658 , H01L29/0665 , H01L29/122 , H01L29/127 , H01L29/2003 , H01L33/007 , H01L33/12
Abstract: Disclosed are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes: a substrate; a potential control layer including, on the substrate, a nanocomposite of first and second nanoparticles made of different materials; and a nitride semiconductor layer formed on the potential control layer.
Abstract translation: 公开了一种氮化物半导体器件及其制造方法。 氮化物半导体器件包括：衬底; 在所述基板上包括由不同材料制成的第一和第二纳米颗粒的纳米复合材料的电位控制层; 以及形成在电位控制层上的氮化物半导体层。
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公开(公告)号：KR101372461B1
公开(公告)日：2014-03-12
申请号：KR1020120081874
申请日：2012-07-26
Applicant: 성균관대학교산학협력단
IPC: H02S30/00 , H01L31/0236 , H01L31/0216 , G02B1/113 , G02B1/12
CPC classification number: Y02E10/50
Abstract: 본원은 반사방지막, 이의 제조 방법 및 이를 이용한 태양전지에 관한 것으로서, 졸-겔 방법을 이용한 구형 나노입자의 도포와 상기 나노입자를 습식 에칭함으로써 표면 텍스쳐링(texturing) 처리하는 것을 포함하는 간단한 공정에 의하여 제조될 수 있는 반사방지막, 이의 제조 방법 및 이를 이용한 태양전지에 관한 것이다.
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Patent Agency Ranking
公开(公告)号：KR1020130036547A
公开(公告)日：2013-04-12
申请号：KR1020110100702
申请日：2011-10-04
Applicant: 성균관대학교산학협력단
IPC: H01L31/04 , H01L31/0224 , H01L31/0236 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/04 , H01L31/0224 , H01L31/0236 , H01L31/18
Abstract: PURPOSE: A silicon solar cell and a manufacturing method thereof are provided to improve the power generation efficiency of the solar cell by forming an antireflection layer on a front electrode of the solar cell. CONSTITUTION: A second conductive type emitter layer(20) is formed on the front surface of a first conductive base material. A front electrode(30) is formed on the emitter layer. A first conductive type dopant is doped on the front electrode. An antireflection layer(40) includes spherical metal particles formed on the emitter layer and the front electrode. A rear electrode(50) is formed on the rear surface of the first conductive base material.
Abstract translation: 目的：提供硅太阳能电池及其制造方法，以通过在太阳能电池的前电极上形成抗反射层来提高太阳能电池的发电效率。 构成：在第一导电基材的前表面上形成第二导电型发射极层（20）。 在发射极层上形成前电极（30）。 第一导电型掺杂剂掺杂在前电极上。 防反射层（40）包括形成在发射极层和前电极上的球形金属颗粒。 在第一导电性基材的背面形成有后电极（50）。
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公开(公告)号：KR101230039B1
公开(公告)日：2013-02-05
申请号：KR1020100063572
申请日：2010-07-01
Applicant: 성균관대학교산학협력단
Abstract: 본원은, 브라운관, 발광 다이오드(LED), 플라즈마 디스플레이 패널PDP), 전계 방출 디스플레이(FED) 및 냉음극형광 램프(CCFL) 등과 같은 디스플레이용 및 램프용 발광기구에 사용할 수 있는 초미세입자의 SiO계(실리케이트계) 산화물 형광체 분말의 제조 방법에 관한 것으로서, 알칼리 금속 염, +2가 금속 또는 이들의 조합, 실리콘 화합물 및 희토류 금속 염을 포함하는 수용액을 고분자 물질에 함침시켜 전구체를 수득하고, 상기 전구체를 2단계로 소성함으로써 나노 크기 내지 서브 마이크로 크기의 SiO계 산화물 형광체 분말을 수득하는 것을 포함한다.
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公开(公告)号：KR1020110081596A
公开(公告)日：2011-07-14
申请号：KR1020100001843
申请日：2010-01-08
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
Abstract: PURPOSE: An optical image shutter and a manufacturing method thereof are provided to form an electric light crystallization in the low temperature by using a cheap transparent substrate including a glass substrate etc. CONSTITUTION: A first reflecting layer(11) is arranged on a transparent amorphous plate(10). A transparent buffer layer(12) of crystalline is arranged on the first reflecting layer. An electric light thin film layer(13) of crystalline is arranged on the transparent buffer layer, and a refractive index changes based on electric fields. A transparent electrode is arranged on the electric light thin film layer(14). A second reflecting layer(16) is arranged on the transparent electrode.
Abstract translation: 目的：提供一种光学图像快门及其制造方法，以通过使用包括玻璃基板等的便宜的透明基板在低温下形成电光结晶。构成：第一反射层（11）被布置在透明无定形 板（10）。 晶体的透明缓冲层（12）布置在第一反射层上。 在透明缓冲层上设置结晶的电光薄膜层（13），折射率基于电场而变化。 透明电极设置在电光薄膜层（14）上。 第二反射层（16）布置在透明电极上。
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公开(公告)号：KR1020110002445A
公开(公告)日：2011-01-07
申请号：KR1020100063572
申请日：2010-07-01
Applicant: 성균관대학교산학협력단
Abstract: PURPOSE: A silicate-based oxide phosphor is provided to enable use as a fluorescent substance for a display or a lamp containing a cold cathode fluorescent lamp due to uniform particle size distribution and excellent luminous efficiency. CONSTITUTION: A method for preparing a silicate-based oxide phosphor comprises the steps of: impregnating an aqueous solution including alkali metal salt, divalent metal salt or combination thereof, silicon compound and rare earths metal salt, to a polymer; sintering the precursor in a furnace heated to the temperature of 400-1000 °C and again sintering the precursor in a reducing atmosphere to obtain SiO-based phosphor powder including alkali metal, +2 metal or combination thereof.
Abstract translation: 目的：提供一种硅酸盐系氧化物荧光体，由于粒径分布均匀，发光效率优异，能够用作显示器用荧光物质或含有冷阴极荧光灯的灯。 构成：制备硅酸盐基氧化物荧光体的方法包括以下步骤：将包含碱金属盐，二价金属盐或其组合的水溶液，硅化合物和稀土金属盐浸渍到聚合物中; 在加热至400-1000℃的炉中烧结前体，再次在还原气氛中烧结前体，得到包含碱金属+2金属或其组合的SiO基荧光体粉末。
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公开(公告)号：KR1020100094169A
公开(公告)日：2010-08-26
申请号：KR1020090013478
申请日：2009-02-18
Applicant: 성균관대학교산학협력단
Abstract: PURPOSE: YVO based fluorescent powder and a manufacturing method thereof are provided to secure the uniformity of particle distribution, and to use the powder for manufacturing display devices, and all kinds of lighting devices. CONSTITUTION: A manufacturing method of YVO based fluorescent powder comprises the following steps: impregnating a metal salt solution including yttrium and vanadium to a polymer material; calcinating the outcome from the previous step by inserting into a furnace heated into 500~1,000 deg C; sintering the outcome from the previous step by heating into 1,000~1,300 deg C; solution-processing the outcome with a basic solution.
Abstract translation: 目的：提供基于YVO的荧光粉及其制造方法，以确保粒子分布的均匀性，并且使用用于制造显示装置的粉末和各种照明装置。 构成：基于YVO的荧光粉的制造方法包括以下步骤：将包含钇和钒的金属盐溶液浸渍到聚合物材料中; 通过插入加热到500〜1000℃的炉中煅烧前一步骤的结果; 通过加热至1000〜1300℃，烧结前一步骤的结果; 用基本解决方案解决处理结果。
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