Abstract:
PURPOSE: A long wavelength band erbium-doped fiber amplifier and a backward amplified spontaneous emission intercepting method are provided to improve an input/output photo intensity change efficiency and noise factor feature by adjusting an intercepting rate of a backward amplified spontaneous emission. CONSTITUTION: A light signal is inputted to a first stage erbium-doped fiber(202). An output light signal amplified by a second stage erbium-doped fiber(203) is outputted through an IWDM photo coupler(204). A laser diode(205) provides an excited light to a TIWDM photo coupler(201). The TIWDM photo coupler(201) couples an input light signal and an exited light of 980 nm. An IWDM photo coupler(204) couples an output light signal and an exited light of 1480 nm. A controller is installed between the first and second stage erbium-doped fibers(202,203) and controls an intercepting rate of a backward amplified spontaneous emission. Two 3 port photo circulators(207,208) are connected between the first and second stage erbium-doped fibers(202,203) to each other in series.
Abstract:
PURPOSE: An L-band EDFA(Erbium Doped Fiber Amplifier) is provided to be capable of securing a large gain by using an EDF length of the second amplification stage longer than that of the first amplification stage. CONSTITUTION: The first amplification stage(100) has the first EDF(102) of a predetermined length and a reverse-direction pump 980nm laser diode(103) in order to lower a noise figure of an input light of a long wavelength band, and it amplifies the input light. The second amplification stage(300) has the second EDF(303) of a predetermined length and a bidirectional pump 980nm laser diode(302) in order to adjust a gain magnitude, and it amplifies the primarily amplified input light. The length of the second EDF is ten to twentieth times as long as that of the first EDF. An isolator(200) is connected between the first and second amplification stages so as to isolate the first and second amplification stages.
Abstract:
PURPOSE: A drive circuit for micro gyro is provided to maintain a desired size of reference vibration by tracking an operating point of a structure. CONSTITUTION: An inversion amplification portion(42) receives the frist control voltage. The first auxiliary amplification portion(43) receives an output of the inverse amplification portion(42) and the second control voltage and decides an operating point of the inverse amplification portion(42). A phase delay portion(44) is used for delaying a phase of the output of the inverse amplification portion(42). A non-inversion amplification portion(45) receives an output of the phase delay portion(44) and the second control voltage. An output of the non-inversion amplification portion(45) is connected with a structure. The second auxiliary amplification portion(46) receives an output of the non-inversion amplification portion(45) and the third control voltage and decides an operating point of the non-inversion amplification portion(45). An amplitude control portion(47) is used for controlling a size of a reference vibration of the structure.
Abstract:
PURPOSE: An inrush current protection and switching circuit for a direct current to direct current converter is provided to prevent an inrush current occurring on switching by incorporating an inrush current protection circuit with a switching circuit that functions to switch between subsystems. CONSTITUTION: An inrush current protection and switching circuit for a direct current to direct current converter comprises a switching unit(330), a driving unit(320), and an inrush current protection unit(310). The switching unit stabilizes an input voltage in response to an instruction to drive the direct current to direct current converter and delays the instruction to drive to be transmitted to the driving unit. Also, the switching unit transmits a switching signal in response to an instruction to stop the direct current to direct current converter and delays the instruction to stop to be transmitted to the driving unit. The driving unit receives the instruction to drive or stop from the switching unit for transmitting an instruction to control the connection of power supply. The inrush current preventing unit receives the instruction to control the connection of power supply for delaying the connection and disconnection of power supply.
Abstract:
PURPOSE: A manufacturing method of a lens-type light concentration structure is provided to increase laser concentrating efficiency and manufacturing precision by directly processing the silicon plate. CONSTITUTION: A determined thickness of silicon epitaxial layer(2) is formed in multi layer on a silicon plate(1) top doped with impurity. The impurity concentration is distributed to be increasingly larger away from the center of the silicon epitaxial layer(2). Some region of the silicon epitaxial layer(2) is etched to expose the silicon plate(1), in order to form a silicon epitaxial layer pattern(4). Impurity is diffused on the entire surface including the silicon epitaxial layer pattern(4). An oxide layer grown by a thermal oxidation process is etched and a light concentration structure with 3-dimensional convex lens shape is formed vertically on the silicon plate(1).
Abstract:
PURPOSE: A wavelength division optical switching device is to allow an optical switching device to have a simple structure capable of switching a wavelength division multiplexed optical signal without a variable wavelength filter and a wavelength converter. CONSTITUTION: A wavelength division optical switching device comprises a first divider(221,22N) for dividing a wavelength division multiplexed optical signal transferred through an input port and an optical switching part(223,23N) for switching the optical signal divided by the first divider to a corresponding output port. The optical switching part comprises: a second divider(241,24N) for again dividing a signal transferred by the first divider; an optical switch(251,25N) for selectively switching optical signal transferred from the second divider; a fixing wavelength filter(261 to 26N) that filters an optical signal selected by the optical switch to extract an optical signal having a corresponding wavelength and transfers the extracted optical signal; and a wavelength multiplexer(271) that multiplexes the optical signal extracted by the fixing wavelength filter and transfers the multiplexed optical signal to a corresponding output port.
Abstract:
PURPOSE: A method of fabricating a micro-vacuum structure for a device operated in vacuum is provided to reduce a step of containing each acceleration sensor in vacuum according to each sensor chip. CONSTITUTION: A method of fabricating a micro-vacuum structure for a device operated in vacuum comprises the steps of totally etching a silicon epitaxial layer of a silicon substrate having the upper silicon epitaxial layer, an interlayer insulating film, and a lower silicon bulk layer to form and seal two electrode structures and a floated vibration structure with a vacuum sealing substrate; and etching from a rear side of the silicon substrate to the interlayer insulating film to form metal electrode after opening the electrode structure.
Abstract:
본 발명은 렌즈형 집광 구조물의 제조 방법에 관한 것이다. 본 발명에서는 실리콘 기판 상부에 불순물이 주입된 실리콘 에피층을 다층으로 형성하되, 중앙부를 중심으로 대칭적으로 불순물의 농도를 조절하여 실리콘 에피층을 형성하고, 상기 실리콘 에피층을 패터닝한 후 불순물 확산 및 산화 공정을 실시하여 산화막을 성장시키고, 상기 산화막을 식각할 때 불순물의 농도에 따른 식각율의 차이를 이용하여 실리콘 기판상에 수직으로 형성된 렌즈형 집광 구조물을 제조한다. 상기와 같이 제조된 본 발명에 따른 렌즈형 집광 구조물을 레이저 다이오드에서 방출되는 광과 광섬유를 커플링시키는 광 커플링 장치에 이용하면 광 집광의 효율성을 높일 수 있다.
Abstract:
본 발명은 디지틀 전송 분야의 동기식 전송 시스템 분류 중 단국형, 분기 결합형, 교차 연결형 중에서 교차 연결형에 속하는 것으로서 2.5Gbps급(STM-16)입출력 링크와 링 망 연동 기능을 통합한 동기식 교차 연결 장치에 관한 것이다. 본 발명은 다수의 STM-16 신호에 대한 입출력 기능을 수행하는 입출력 수단과, 상기 입출력 수단의 신호를 교차/연결하는 신호 교차 수단과, 상기 입출력 수단과 상기 신호 교차 수단에 필요한 동기 신호를 출력하는 동기 수단으로 구성되어, 기능부간 다중화된 병렬 AUG 데이타의 접속 관계를 동일하게 함으로써 융통성 있는 기능 구성을 가질 수 있을 뿐만 아니라, 접속되는 신호를 병렬처리하여 안정된 장치를 제공하고, 국간 전송 용량이 2.5Gbps급인 구간에서는 별도의 장치 없이 전송 능력을 가지므로, 규모면에서 경제적이고 효율적으로 구성할 수 있으며, 즉각적인 링 복구 기능을 가짐으로써 생존도를 향상시킨다는 장점이 있다.