公开(公告)号：US20190198345A1

公开(公告)日：2019-06-27

申请号：US16289428

申请日：2019-02-28

Applicant: Lam Research Corporation

Inventor： Andreas Fischer ,  Thorsten Lill ,  Richard Janek ,  John Boniface

IPC: H01L21/311 ,  H01J37/32 ,  C23F4/00 ,  C23F1/12 ,  C23F1/00 ,  C23C16/02 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01L21/31122 ,  B81C2201/0135 ,  B81C2201/0142 ,  C23C16/0245 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32082 ,  H01J2237/334 ,  H01L21/30655 ,  H01L21/32136

Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, to remove the modified layer from the substrate surface, wherein removing the modified layer includes exposing the substrate surface to a metal complex, such that a ligand exchange reaction occurs between the metal complex and converted species of the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues formed from the exposure of the substrate surface to the metal complex, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

公开(公告)号：US20190023563A1

公开(公告)日：2019-01-24

申请号：US15757672

申请日：2016-09-09

Applicant: DENSO CORPORATION

Inventor： Akira OGAWA ,  Yoshitaka NODA ,  Tetsuo YOSHIOKA ,  Yuhei SHIMIZU

IPC: B81C1/00

CPC classification number: B81C1/00579 ,  B81B2201/033 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0139 ,  B81C2201/0142 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0882

Abstract: A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.

公开(公告)号：US20180240967A1

公开(公告)日：2018-08-23

申请号：US15956376

申请日：2018-04-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CROCUS TECHNOLOGY

Inventor： Michael C. Gaidis ,  Erwan Gapihan ,  Rohit Kilaru ,  Eugene J. O'Sullivan

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L21/311

CPC classification number: H01L43/08 ,  B81C2201/0132 ,  B81C2201/0142 ,  B81C2201/0143 ,  G11C11/161 ,  G11C2211/5615 ,  H01L21/31105 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

公开(公告)号：US09975766B2

公开(公告)日：2018-05-22

申请号：US15312146

申请日：2015-05-05

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Yonggang Hu ,  Guoping Zhou

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81C1/00 ,  B81C2201/0133 ,  B81C2201/0142

Abstract: An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel (120) and a support beam (140) on a front surface of a substrate (100); forming a first epitaxial layer (200) on the front surface of the substrate (100) to seal the shallow channel (120); forming a suspended mesh structure (160) below the first epitaxial layer (200); and forming a deep channel (180) at a position on a back surface of the substrate (100) corresponding to the shallow channel (120), so that the shallow channel (120) is in communication with the deep channel (180). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is more precise, and the uniformity and the homogeneity of the formed support beam are better.

公开(公告)号：US20160054160A1

公开(公告)日：2016-02-25

申请号：US14933982

申请日：2015-11-05

Applicant: XIANG ZHENG TU

Inventor： XIANG ZHENG TU

IPC: G01F1/692 ,  H01L35/34

CPC classification number: G01F1/692 ,  B81C1/00158 ,  B81C1/00246 ,  B81C1/00571 ,  B81C2201/0115 ,  B81C2201/0142 ,  G01F1/6845 ,  G01F1/688 ,  H01L21/3063 ,  H01L35/34

Abstract: A vacuum-cavity-insulated flow sensor and related fabrication method are described. The sensor comprises a porous silicon wall with numerous vacuum-pores which is created in a silicon substrate, a porous silicon membrane with numerous vacuum-pores which is surrounded and supported by the porous silicon wall, and a cavity with a vacuum-space which is disposed beneath the porous silicon membrane and surrounded by the porous silicon wall. The fabrication method includes porous silicon formation and silicon polishing in HF solution.

Abstract translation: 描述了真空腔绝缘流量传感器及相关的制造方法。 传感器包括具有许多真空孔的多孔硅壁，其形成于硅衬底中，多孔硅膜具有许多真空孔，该多孔硅膜被多孔硅壁包围和支撑，以及具有真空空间的空腔， 设置在多孔硅膜下方并被多孔硅壁包围。 制造方法包括HF溶液中的多孔硅形成和硅研磨。

公开(公告)号：US09212940B2

公开(公告)日：2015-12-15

申请号：US13607352

申请日：2012-09-07

Applicant: Xiang Zheng Tu

Inventor： Xiang Zheng Tu

IPC: G01F1/68 ,  G01F1/688 ,  G01F1/684 ,  G01F1/692

CPC classification number: G01F1/692 ,  B81C1/00158 ,  B81C1/00246 ,  B81C1/00571 ,  B81C2201/0115 ,  B81C2201/0142 ,  G01F1/6845 ,  G01F1/688 ,  H01L21/3063 ,  H01L35/34

Abstract: A vacuum-cavity-insulated flow sensor and related fabrication method are described. The sensor comprises a porous silicon wall with numerous vacuum-pores which is created in a silicon substrate, a porous silicon membrane with numerous vacuum-pores which is surrounded and supported by the porous silicon wall, and a cavity with a vacuum-space which is disposed beneath the porous silicon membrane and surrounded by the porous silicon wall. The fabrication method includes porous silicon formation and silicon polishing in HF solution.

Abstract translation: 描述了真空腔绝缘流量传感器及相关的制造方法。 传感器包括具有许多真空孔的多孔硅壁，其形成于硅衬底中，多孔硅膜具有许多真空孔，该多孔硅膜被多孔硅壁包围和支撑，以及具有真空空间的空腔， 设置在多孔硅膜下方并被多孔硅壁包围。 制造方法包括HF溶液中的多孔硅形成和硅研磨。

公开(公告)号：US08945939B2

公开(公告)日：2015-02-03

申请号：US14082448

申请日：2013-11-18

Applicant: Nalco Company

Inventor： Amy M. Tseng ,  Brian V. Jenkins ,  Robert Mack

IPC: G01N21/75

CPC classification number: G01N31/221 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0142 ,  C09K13/00 ,  G01N21/272 ,  G01N21/80 ,  G01N35/085 ,  G01N2021/8411 ,  G01N2021/8557 ,  H01L21/67063 ,  H01L22/12 ,  Y10T436/153333

Abstract: The invention is directed towards methods and compositions for identifying the amount of hydrofluoric acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of hydrofluoric acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of hydrofluoric acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the hydrofluoric acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.

Abstract translation: 本发明涉及用于鉴定缓冲氧化物蚀刻组合物中氢氟酸的量的方法和组合物。 在缓冲氧化物蚀刻组合物中，非常难以测量氢氟酸的量，因为其具有不同的平衡，并且它是有毒的，因此难以处理和取样。 然而，当用于制造微芯片时，不正确量的氢氟酸会破坏这些芯片。 当与添加的显色剂接触时，本发明利用光谱测量氢氟酸的独特方法，以获得准确，立即和安全的精确测量。

公开(公告)号：US20140315320A1

公开(公告)日：2014-10-23

申请号：US14322009

申请日：2014-07-02

Applicant: Nalco Company

Inventor： Amy M. Tseng ,  Brian V. Jenkins ,  Robert M. Mack

IPC: G01N31/22

CPC classification number: G01N31/221 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0142 ,  C09K13/00 ,  G01N21/272 ,  G01N21/80 ,  G01N35/085 ,  G01N2021/8411 ,  G01N2021/8557 ,  H01L21/67063 ,  H01L22/12 ,  Y10T436/153333

Abstract: The invention is directed towards methods and compositions for identifying the amount of hydrofluoric acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of hydrofluoric acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of hydrofluoric acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the hydrofluoric acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.

Abstract translation: 本发明涉及用于鉴定缓冲氧化物蚀刻组合物中氢氟酸的量的方法和组合物。 在缓冲氧化物蚀刻组合物中，非常难以测量氢氟酸的量，因为其具有不同的平衡，并且它是有毒的，因此难以处理和取样。 然而，当用于制造微芯片时，不正确量的氢氟酸会破坏这些芯片。 当与添加的显色剂接触时，本发明利用光谱测量氢氟酸的独特方法，以获得准确，立即和安全的精确测量。

公开(公告)号：US08652343B2

公开(公告)日：2014-02-18

申请号：US10524525

申请日：2003-08-14

Applicant: Martin Hausner

Inventor： Martin Hausner

IPC: B44C1/22 ,  H01L21/302

CPC classification number: H01L21/3065 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2201/0142 ,  H01L21/30655 ,  H01L21/3081

Abstract: A method for the selective removal of material from a substrate surface for forming a deepening includes the steps of applying a mask onto the substrate surface in accordance with the desired selective removal and dry-etching the substrate, a metal, preferably aluminum, being used as the masking material. Power may be coupled inductively to a plasma.

Abstract translation: 用于从衬底表面选择性地去除用于形成深化的方法包括以下步骤：根据期望的选择性去除和干蚀刻衬底，金属，优选铝，将掩模施加到衬底表面上，用作 掩蔽材料。 功率可以感应耦合到等离子体。

公开(公告)号：US20130183773A1

公开(公告)日：2013-07-18

申请号：US13731296

申请日：2012-12-31

Applicant: Amy M. Tseng ,  Brian V. Jenkins ,  Robert Mack

Inventor： Amy M. Tseng ,  Brian V. Jenkins ,  Robert Mack

IPC: G01N31/22

CPC classification number: G01N31/221 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0142 ,  C09K13/00 ,  G01N21/272 ,  G01N21/80 ,  G01N35/085 ,  G01N2021/8411 ,  G01N2021/8557 ,  H01L21/67063 ,  H01L22/12 ,  Y10T436/153333

Abstract: The invention is directed towards methods and compositions for identifying the amount of hydrofluoric acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of hydrofluoric acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of hydrofluoric acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the hydrofluoric acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.

Abstract translation: 本发明涉及用于鉴定缓冲氧化物蚀刻组合物中氢氟酸的量的方法和组合物。 在缓冲氧化物蚀刻组合物中，非常难以测量氢氟酸的量，因为其具有不同的平衡，并且它是有毒的，因此难以处理和取样。 然而，当用于制造微芯片时，不正确量的氢氟酸会破坏这些芯片。 当与添加的显色剂接触时，本发明利用光谱测量氢氟酸的独特方法，以获得准确，立即和安全的精确测量。