Abstract:
PURPOSE: A method for improving the surface stability of titanium containing complex oxide and the titanium containing complex oxide are provided to improve the dispersibility of the titanium containing complex oxide by preventing the coagulation of the titanium containing complex oxide. CONSTITUTION: Amorphous titanium dioxide is obtained by applying water to titanium alkoxide and implementing a hydrolyzing process and a condensation process. Metal hydroxide octahydrate is applied to the amorphous titanium dioxide to obtain titanium containing complex oxide. A capping ligand is applied to the complex oxide to obtain capping ligand coordinated complex oxide. The metal hydroxide octahydrate is represented by M(OH)_2·8H_2O, and the M is a metal. The titanium alkoxide is represented by Ti(OR1)_4, and the R1 is ethyl, n-propyl, iso-propyl, or n-butyl. The capping ligand is one or more selected form oleic acid, hexanoic acid, trioctyl amine, hexadecyl amine, dimethyl octyl amine, trioctyl phosphine oxide, trioctylphosphine, and bis(2-ethylhexyl)hydrogenphosphate.
Abstract:
본 발명은 하기 화학식 1로 표시되는 신규한 폴리티오펜 유도체 및 이를 이용한 유기박막트랜지스터에 관한 것으로, 보다 상세하게는 티오펜 측쇄에 전자 공여 (electron-donating) 특성이 있는 황(sulfur)원자가 직접 결합된 알킬티오 측쇄가 도입된 폴리티오펜 유도체 및 이를 반도체 채널층으로 이용한 유기박막트랜지스터에 관한 것이다. [화학식 1]
[상기 화학식 1에서, R 1 , R 2 , Ar 1 , Ar 2 , a, b, m 및 n은 각각 발명의 상세한 설명에서 정의한 바와 같다.] 또한, 본 발명에 따른 폴리티오펜 유도체는 유기박막트랜지스터 제작시 반도체 채널로 사용될 수 있으며, 다양한 공중합 단량체와의 공중합을 통해 최종 폴리티오펜의 전기적, 광학적 특성을 조절하고 유기박막트랜지스터 소자 구조에 따른 최적화된 반도체 채널 물질을 제공할 수 있는 장점이 있다. 공액 고분자, 폴리티오펜, 유기트랜지스터, 유기반도체
Abstract:
PURPOSE: A polyacene derivative, and an organic thin film transistor using thereof are provided to secure the excellent thermal stability and the higher hall mobility than a conventional organic semiconductor material. CONSTITUTION: A polyacene derivative is marked with chemical formula 1. In the chemical formula 1, Ar1 is naphthalene, anthracene, tetracene, pentacene, anthradithiophene, or anthradithiophene including fluorine. Ar2 and Ar3 are C6~C30 arylene or C4~C30 heteroarylene, respectively. R1 and R2 are hydrogen, deuterium, halogen, C1~C30 alkyl, or tri(C1~C30)alkylsilyl. An organic thin film transistor includes a substrate a source-drain electrode, an organic semiconductor film, an insulating film, and a gate electrode. The organic semiconductor film is formed with more than one polyacene derivative.
Abstract:
PURPOSE: A novel fullerene derivative compound and organic electronic device having the same are provided to ensure high electron mobility and to use organic light emitting device, organic solar cell, organic photo conductor, and organic memory. CONSTITUTION: A fullerene is derived by chemical formula 1. A method for preparing fullerene derive comprises: a step of preparing thiophene aldehyde compound of chemical formula 2 or 3; and a step of mixing N-(C1-C5)alkyl glycine, fullerene(carbon cluster compound of C60 or C70) and solvent with thiophene aldehyde compound. An organic electronic device has the fullerene derivative compound of chemical formula 1. The compound is dopant.
Abstract:
PURPOSE: An organic solar cell device is provided to improve an open voltage property when an organic solar cell device is implemented by increasing a LUMO energy level. CONSTITUTION: A fullerene derivatives includes two cyclohexane form substituents. Fullerene derivatives are combined with a polymer material for a doner. A fullerene derivative compound for an organic solar cell device is a dopant. The fullerene derivatives for an organic solar cell device is formed with one which is selected among a group which is formed with a solution process mode and a deposition method.
Abstract:
PURPOSE: A preparation method of organic photovoltaic cells photoactive layer using aerosol jet printing is provided to increase the efficiency of solar energy conversion of the organic solar cell device. CONSTITUTION: An organic photovoltaic cells photoactive layer is produced. The organic photovoltaic cells photoactive layer is moved to the aerosol jet nozzle. The mist of the organic photovoltaic cells photoactive layer is sprayed at the transparent electrode. The photoactive layer in which the spontaneous crystallization is induced is formed. The evaporated photoactive layer is selectively sintered. The photoactive layer solution dissolves a donor material and an accepter material in the organic solvent.
Abstract:
(a)화학식 1 내지 3에서 선택되는 어느 하나 이상의 방향족 다가 알릴이서계 화합물, (b) 화학식 4 내지 화학식 5에서 선택되는 하나 이상의 다가의 티올계 화합물 및 (c) 광개시제를 함유하는 고굴절율 광중합 조성물을 제공하는 것이며, 또한 본 발명은 하기 화학식 1 내지 3의 방향족 다가 알릴이서계 화합물을 제공하는 것이다. [화학식 1]
[화학식 2]
[화학식 3
[화학식 4]
[화학식 5]
(상기식에서 Ar, R1, R2, R3, R4, n, m, m' 은 명세서에 정의된 것과 같음) 방향족 다가 알릴 이서계 화합물, 티올계, 광개시제, 광중합, 고굴절율
Abstract:
Fluorinated methanofullerene compounds and an organic electronic device comprising the same are provided to improve solubility and electron mobility electrochemically by introducing fluorinated substituents in methanofullerene. A methanofullerene compound is represented by a formula 1. In the formula 1, R1 is a C6-C30 aryl group or C4-C30 heteroaryl group. The aryl group or heteroaryl group can be further substituted with at least one substituent selected from a straight or branched chain saturated or unsaturated C1-C30 alkyl group, a C1-C30 alkoxy group, a C6-C30 aryl group, a C6-C30 ar C1-C30 alkyl group, a C1-C30 alkyl C6-C30 aryl group, a C6-C30 or C1-C30 alkoxy group, a C4-C30 heteroaryl group, a C3-C30 cycloalkyl group, a 3- to 7-membered saturated or unsaturated heterocycloalkyl group including oxygen, nitrogen or sulfur in hetero rings, a hydroxy group, a carboxylic acid group, an amino group, a mono or di C1-C30 alkylamino group, a C1-C30 alkylcarbonyl group, a C1-C30 alkoxycarbonyl group, a benzoyl group, a phenoxy group, a cyano group, a nitro group, and a fluorinated group. The alkyl group, alkoxy group, aryl group, aralkyl group, aralkoxy group, heteroaryl group, cycloalkyl group, heterocycloalkyl group, alkylcarbonyl group, or alkoxycarbonyl group can be further substituted with at least one fluorinated group. R2 is a straight or branched chain saturated or unsaturated C1-C30 alkyl group substituted with at least one fluorinated group, a C6-C30 aryl group substituted with at least one fluorinated group, a straight or branched chain saturated or unsaturated C1-C30 alkyl C6-C30 aryl group substituted with at least one fluorinated group, a C6-C30 or C1-C30 alkyl group substituted with at least one fluorinated group, a C4-C30 heteroaryl group substituted with at least one fluorinated group, or a C4-C30 heteroaryl C1-C30 alkyl group substituted with at least one fluorinated group. The A as a fullerene derivative is C60, C72, C76, C78, or C84 and n is an integer of 1 to 7.
Abstract:
A cadmium selenide complex is provided to produce pure cadmium selenide nanoparticles useful for manufacturing cadmium selenide quantum dots at low temperature. A cadmium selenide complex has a structure represented by the formula 1 of Y-Cd-Se(CH2)mO(CH2)nO-R', wherein Y is a halogen element or C1-7 linear or branched alkyl, R' is a C1-7 linear or branched alkyl, and m and n are, independently of each other, 1-7. A method for preparing a cadmium selenide complex represented by the formula 2 of X-Cd-Se(CH2)mO(CH2)nO-R' includes the step of reacting a cadmium(II) halide compound represented by the formula 3 of CdX2 with a selenide alkali metal salt compound represented by the formula 4 of MSe(CH2)mO(CH2)nOR'. In the formulae 2-4, X is a halogen element, R' is a C1-7 linear or branched alkyl, m and n are, independently of each other, 1-7, and M is Li, Na, or K.
Abstract:
A fabrication method of colloidal quantum dot nano-particle is provided to obtain the quantum dot having favorable concentration, particle size and bandgap energy without using expensive and toxic materials such as TOP or TOPO by adding bivalent anion type of sixth group metal(M2^2-) solution to second group metal(M1^2+) oleate. The method includes: first step of preparing second group metal oleate by reacting oleic acid in second group metal precursor solution of any one selected from Cd, Pb and Zn; second step of preparing a solution containing bivalance anionic sixth group metal by dissolving precursor of sixth group metal or cationic sixth group metal in a solvent with high boiling point of 200 to 350deg.C and proceeding reductive reaction of the solution at 100 to 200deg.C; and third step of producing colloidal quantum dot nano-particles by reacting the prepared oleate of second group metal and the prepared solution containing bivalance anionic sixth group metal at 100 to 250deg.C.