公开(公告)号：US10520451B2

公开(公告)日：2019-12-31

申请号：US15683280

申请日：2017-08-22

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef

IPC: G01N21/956 ,  G03F7/20

Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

公开(公告)号：US10508906B2

公开(公告)日：2019-12-17

申请号：US16121780

申请日：2018-09-05

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef ,  Simon Reinald Huisman

IPC: G03F7/20 ,  G01B11/27

Abstract: A method of determining a parameter of a patterning process applied to an object comprising two features (for example an overlay of the two features) comprises: irradiating the two features of the object with a radiation beam and receiving at least a portion of the radiation beam scattered from the two features of the object. The at least a portion of the radiation beam comprises: a first portion comprising at least one diffraction order and a second portion comprising at least one diffraction order that is different to a diffraction order of the first portion. The method further comprises moderating a phase difference between the first and second portions and combining the first and second portions such that they interfere to produce a time dependent intensity signal. The method further comprises determining the parameter of the patterning process from a contrast of the time dependent intensity signal.

公开(公告)号：US10451978B2

公开(公告)日：2019-10-22

申请号：US16010320

申请日：2018-06-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Simon Gijsbert Josephus Mathijssen ,  Marc Johannes Noot ,  Arie Jeffrey Den Boef ,  Mohammadreza Hajiahmadi ,  Farzad Farhadzadeh

IPC: G03B27/42 ,  G03F7/20 ,  G01B11/27

Abstract: A method including: for a metrology target, having a first biased target structure and a second differently biased target structure, created using a patterning process, obtaining metrology data including signal data for the first target structure versus signal data for the second target structure, the metrology data being obtained for a plurality of different metrology recipes and each metrology recipe specifying a different parameter of measurement; determining a statistic, fitted curve or fitted function through the metrology data for the plurality of different metrology recipes as a reference; and identifying at least two different metrology recipes that have a variation of the collective metrology data of the at least two different metrology recipes from a parameter of the reference that crosses or meets a certain threshold.

公开(公告)号：US10394140B2

公开(公告)日：2019-08-27

申请号：US16326410

申请日：2017-07-28

Applicant: ASML Netherlands B.V.

Inventor： Hendrikus Herman Marie Cox ,  Paul Corné Henri De Wit ,  Arie Jeffrey Den Boef ,  Adrianus Hendrik Koevoets ,  Jim Vincent Overkamp ,  Frits Van Der Meulen ,  Jacobus Cornelis Gerardus Van Der Sanden

IPC: G03F7/20

Abstract: A lithographic apparatus comprises a projection system which is configured to project a patterned radiation beam to form an exposure area on a substrate held on a substrate table. The lithographic apparatus further comprises a heating apparatus comprises one or more radiation sources configured to provide additional radiation beams which illuminate and heat part of the substrate during the exposure.

公开(公告)号：US10386176B2

公开(公告)日：2019-08-20

申请号：US14835504

申请日：2015-08-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Henricus Wilhelmus Maria Van Buel ,  Christophe David Fouquet ,  Hendrik Jan Hidde Smilde ,  Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Johannes Marcus Maria Beltman ,  Andreas Fuchs ,  Omer Abubaker Omer Adam ,  Michael Kubis ,  Martin Jacobus Johan Jak

IPC: G01B11/26 ,  G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US10180629B2

公开(公告)日：2019-01-15

申请号：US15385584

申请日：2016-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Joeri Lof ,  Hans Butler ,  Sjoerd Nicolaas Lambertus Donders ,  Aleksey Yurievich Kolesnychenko ,  Erik Roelof Loopstra ,  Hendricus Johannes Maria Meijer ,  Johannes Catherinus Hubertus Mulkens ,  Roelof Aeilko Siebranc Ritsema ,  Frank Van Schaik ,  Timotheus Franciscus Sengers ,  Klaus Simon ,  Joannes Theodoor De Smit ,  Alexander Straaijer ,  Bob Streefkerk ,  Erik Theodorus Maria Bijlaart ,  Christian Alexander Hoogendam ,  Helmar Van Santen ,  Marcus Adrianus Van De Kerkhof ,  Mark Kroon ,  Arie Jeffrey Den Boef ,  Joost Jeroen Ottens ,  Jeroen Johannes Sophia Maria Mertens

IPC: G03F7/20

Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and a sensor is filled with a liquid.

公开(公告)号：US10078268B2

公开(公告)日：2018-09-18

申请号：US15474803

申请日：2017-03-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya

IPC: G03B27/68 ,  G03F7/20 ,  G01N21/956 ,  G01N21/47

CPC classification number: G03F7/70133 ,  G01N21/4788 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70633

Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

公开(公告)号：US10001711B2

公开(公告)日：2018-06-19

申请号：US15104212

申请日：2014-11-20

Applicant: ASML Netherlands B.V.

Inventor： Youri Johannes Laurentius Maria Van Dommelen ,  Peter David Engblom ,  Lambertus Gerardus Maria Kessels ,  Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya ,  Paul Christiaan Hinnen ,  Marco Johannes Annemarie Pieters

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/70683

Abstract: A method and apparatus for obtaining focus information relating to a lithographic process. The method includes illuminating a target, the target having alternating first and second structures, wherein the form of the second structures is focus dependent, while the form of the first structures does not have the same focus dependence as that of the second structures, and detecting radiation redirected by the target to obtain for that target an asymmetry measurement representing an overall asymmetry of the target, wherein the asymmetry measurement is indicative of focus of the beam forming the target. An associated mask for forming such a target, and a substrate having such a target.

公开(公告)号：US20180129139A1

公开(公告)日：2018-05-10

申请号：US15808874

申请日：2017-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Aiqin JIANG ,  Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya ,  Hans Van Der Laan ,  Bart Visser ,  Martin Jacobus Johan Jak

IPC: G03F7/20 ,  G05B19/406

CPC classification number: G03F7/70516 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70633 ,  G03F7/70683 ,  G05B19/406 ,  G05B2219/45028 ,  H01L22/12 ,  H01L22/20

Abstract: A method including obtaining a fit of data for overlay of a metrology target for a patterning process as a function of a stack difference parameter of the metrology target; and using, by a hardware computer, a slope of the fit (i) to differentiate a metrology target measurement recipe from another metrology target measurement recipe, or (ii) calculate a corrected value of overlay, or (iii) to indicate that an overlay measurement value obtained using the metrology target should be used, or not be used, to configure or modify an aspect of the patterning process, or (iv) any combination selected from (i)-(iii).

公开(公告)号：US09835954B2

公开(公告)日：2017-12-05

申请号：US14892880

申请日：2014-05-02

Applicant: ASML Netherlands B.V.

Inventor： Erik Willem Bogaart ,  Franciscus Godefridus Casper Bijnen ,  Arie Jeffrey Den Boef ,  Simon Gijsbert Josephus Mathijssen

IPC: G03F7/00 ,  G01N21/95 ,  G03F7/20 ,  G01N21/956 ,  G01N21/65

CPC classification number: G03F7/70483 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/656 ,  G03F7/70625

Abstract: A substrate is provided with device structures and metrology structures (800). The device structures include materials exhibiting inelastic scattering of excitation radiation of one or more wavelengths. The device structures include structures small enough in one or more dimensions that the characteristics of the inelastic scattering are influenced significantly by quantum confinement. The metrology structures (800) include device-like structures (800b) similar in composition and dimensions to the device features, and calibration structures (800a). The calibration structures are similar to the device features in composition but different in at least one dimension. Using an inspection apparatus and method implementing Raman spectroscopy, the dimensions of the device-like structures can be measured by comparing spectral features of radiation scattered inelastically from the device-like structure and the calibration structure.