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    MEMS ANTI-PHASE VIBRATORY GYROSCOPE
    113.
    发明申请
    MEMS ANTI-PHASE VIBRATORY GYROSCOPE 有权
    MEMS抗相振动陀螺仪

    公开(公告)号：US20160238390A1

    公开(公告)日：2016-08-18

    申请号：US14270596

    申请日：2014-05-06

    Applicant: Chinese Academy of Sciences Institute of Geology and Geophysics

    Inventor： Lian Zhong Yu ,  Chen Sun

    IPC: G01C19/5747 ,  G01C19/5769

    CPC classification number: G01C19/5769 ,  B81B3/0048 ,  B81B2201/0242 ,  B81B2203/0118 ,  B81B2203/0136 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0159 ,  B81C2201/0176 ,  B81C2203/0118 ,  G01C19/574 ,  G01C19/5747

    Abstract: A MEMS anti-phase vibratory gyroscope includes two measurement masses with a top cap and a bottom cap each coupled with a respective measurement mass. The measurement masses are oppositely coupled with each other in the vertical direction. Each measurement mass includes an outer frame, an inner frame located within the outer frame, and a mass located within the inner frame. The two measurement masses are coupled with each other through the outer frame. The inner frame is coupled with the outer frame by a plurality of first elastic beams. The mass is coupled with the inner frame by a plurality of second elastic beams. A comb coupling structure is provided along opposite sides of the outer frame and the inner frame. The two masses vibrate toward the opposite direction, and the comb coupling structure measures the angular velocity of rotation.

    Abstract translation: MEMS反相振动陀螺仪包括两个测量质量，其具有顶盖和底盖，每个与相应的测量质量耦合。 测量质量在垂直方向上相互耦合。 每个测量质量包括外框架，位于外框架内的内框架和位于内框架内的质量。 两个测量质量通过外框架相互耦合。 内框架通过多个第一弹性梁与外框架联接。 质量通过多个第二弹性梁与内框架联接。 梳齿联接结构沿着外框架和内框架的相对侧设置。 两个质量体向相反方向振动，梳齿联结结构测量旋转角速度。

    Massively parallel assembly of composite structures using depletion attraction
    114.
    发明授权
    Massively parallel assembly of composite structures using depletion attraction 有权
    使用耗尽吸引力大量平行组装复合结构

    公开(公告)号：US09051176B2

    公开(公告)日：2015-06-09

    申请号：US12524946

    申请日：2008-02-04

    Applicant: Thomas G. Mason

    Inventor： Thomas G. Mason

    IPC: B81C3/00 ,  B81C99/00 ,  G03F7/40

    CPC classification number: B81C99/008 ,  B81C3/002 ,  B81C3/005 ,  B81C2201/0149 ,  B81C2201/0159 ,  B81C2203/057 ,  G03F7/40 ,  Y10T428/24802

    Abstract: Producing composite structures includes dispersing a first plurality of objects, a second plurality of objects, and a third plurality of objects in a fluid, the third and second plurality of objects having an average maximum dimension that is smaller than the first plurality of objects The first plurality of objects comprise a first, a second, a third and a forth object, each having mating surface regions The first and second objects' mating surfaces are complimentary and the third and forth objects' mating surfaces are complementary The first and second object aggregate together in response to the dispersing of the second plurality of objects in the fluid due to a depletion attraction between the first and the second object The third and forth object aggregate together in response to dispersing the third plurality of objects in the fluid due to a depletion attraction between the third and the fourth object.

    Abstract translation: 生产复合结构包括将第一多个物体，第二多个物体和第三多个物体分散在流体中，第三和第二多个物体具有小于第一多个物体的平均最大尺寸。第一 多个物体包括具有配合表面区域的第一，第二，第三和第四物体。第一和第二物体的配合表面是互补的，并且第三和第四物体的配合表面是互补的。第一和第二物体聚集在一起 响应于由于第一和第二物体之间的耗尽引力而使第二多个物体在流体中的分散。第三和第四个物体响应于由于耗尽吸力而将第三多个物体分散在流体中而聚集在一起 在第三和第四个物体之间。

    Process and system for fabrication of patterns on a surface
    117.
    发明授权
    Process and system for fabrication of patterns on a surface 有权
    用于在表面上制作图案的工艺和系统

    公开(公告)号：US08524100B2

    公开(公告)日：2013-09-03

    申请号：US13003484

    申请日：2009-07-03

    Applicant: Graham L. W. Cross ,  Warren McKenzie ,  John B. Pethica

    Inventor： Graham L. W. Cross ,  Warren McKenzie ,  John B. Pethica

    IPC: C03C15/00

    CPC classification number: G03F7/11 ,  B81C1/00634 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/036 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337

    Abstract: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch. The invention is particularly suitable for patterning of clear well-defined structures down to nano-scale dimensions.

    Abstract translation: 本发明提供了一种在碳基表面上构图结构的系统和工艺，包括将表面的一部分暴露于离子通量，使得暴露表面的材料特性被修饰以在表面上提供硬掩模效应。 蚀刻表面的未曝光部分的另一步骤形成表面上的结构。 发明人已经发现，通过控制离子暴露，顶表面上的表面结构的改变提供掩模图案，而基本上不从暴露表面移除任何材料。 该掩模允许对表面的未曝光区域的后续离子蚀刻，离开暴露区域相对于未曝光区域升高，从而将图案制造到表面上。 例如，Ga +聚焦离子束将图案暴露在金刚石表面上，其在暴露于等离子体蚀刻之后产生这种图案。 本发明特别适用于直到纳米级尺寸的清晰明确定义的结构的图案化。

    Method for manufacturing a patterned structure
    119.
    发明授权
    Method for manufacturing a patterned structure 失效
    图案化结构的制造方法

    公开(公告)号：US07759609B2

    公开(公告)日：2010-07-20

    申请号：US10547798

    申请日：2004-03-04

    Applicant: Micha Asscher ,  Gabriel Kerner

    Inventor： Micha Asscher ,  Gabriel Kerner

    IPC: G03F7/00 ,  B82B3/00

    CPC classification number: G03F7/2051 ,  B23K2103/14 ,  B41M5/24 ,  B81C1/00031 ,  B81C2201/0109 ,  B81C2201/0143 ,  B81C2201/0159 ,  H01L21/0272 ,  H01L21/32131 ,  H01L21/76838 ,  H05K3/027 ,  H05K3/048

    Abstract: A method for forming a micro- or nano-pattern of a material on a substrate is presented. The method utilizes a buffer layer assisted laser patterning (BLALP). A layered structure is formed on the substrate, this layered structure being in the form of spaced-apart regions of the substrate defined by the pattern to be formed, each region including a weakly physisorbed buffer layer and a layer of the material to be patterned on top of the buffer layer. A thermal process is then applied to the layered structure to remove the remaining buffer layer in said regions, and thus form a stable pattern of said material on the substrate resulting from the buffer layer assisted laser patterning. The method may utilize either positive or negative lithography. The patterning may be implemented using irradiation with a single uniform laser pulse via a standard mask used for optical lithography.

    Abstract translation: 提出了在衬底上形成材料的微观或纳米图案的方法。 该方法利用缓冲层辅助激光图案化（BLALP）。 在基板上形成层状结构，该分层结构是由要形成的图案限定的基板的间隔开的区域的形式，每个区域包括弱物理缓冲层和待图案化的材料层 缓冲层顶部。 然后将热处理施加到层状结构以去除所述区域中的剩余缓冲层，从而由缓冲层辅助激光图案化形成在衬底上的所述材料的稳定图案。 该方法可以利用正光刻或负光刻。 可以通过使用用于光学光刻的标准掩模的单个均匀激光脉冲的照射来实现图案化。

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