公开(公告)号：US20190108972A1

公开(公告)日：2019-04-11

申请号：US16152439

申请日：2018-10-05

Applicant: Axcelis Technologies, Inc.

Inventor： Teng-Chao David Tao ,  David Allen Kirkwood

IPC: H01J37/305 ,  H01J37/317 ,  H01J37/05

CPC classification number: H01J37/3053 ,  H01J37/05 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/057 ,  H01J2237/31701

Abstract: An ion implantation system has an ion source configured form an ion beam and an angular energy filter (AEF) having an AEF region. A gas source passivates and/or etches a film residing on the AEF by a reaction of the film with a gas. The gas can be an oxidizing gas or a fluorine-containing gas. The gas source can selectively supply the gas to the AEF region concurrent with a formation of the ion beam. The AEF is heated to assist in the passivation and/or etching of the film by the gas. The heat can originate from the ion beam, and/or from an auxiliary heater associated with the AEF. A manifold distributor can be operably coupled to the gas source and configured to supply the gas to one or more AEF electrodes.

公开(公告)号：US10256069B2

公开(公告)日：2019-04-09

申请号：US15807664

申请日：2017-11-09

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/08 ,  C01B32/50 ,  C01B32/40 ,  C01B7/20 ,  C01B25/10 ,  C01B25/12 ,  C01F17/00 ,  C01G41/00 ,  C23C14/48 ,  H01J37/317

Abstract: Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WFx formation.

公开(公告)号：US10170286B2

公开(公告)日：2019-01-01

申请号：US15281844

申请日：2016-09-30

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/08 ,  H01J37/32 ,  C23C14/48 ,  H01J37/317

Abstract: An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas such as toluene to the ion source chamber. A source gas flow controller controls a flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas, forming carbon ions and atomic carbon. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. A hydrogen peroxide co-gas supply provides a predetermined concentration of hydrogen peroxide co-gas to the ion source chamber, and a hydrogen peroxide co-gas flow controller controls a flow of the hydrogen peroxide gas to the ion source chamber. The hydrogen peroxide co-gas decomposes within the ion source chamber and reacts with the atomic carbon from the molecular carbon source gas in the ion source chamber, forming hydrocarbons within the ion source chamber. An inert gas is further introduced and ionized to counteract oxidation of a cathode due to the decomposition of the hydrogen peroxide. A vacuum pump system removes the hydrocarbons from the ion source chamber, wherein deposition of atomic carbon within the ion source chamber is reduced and a lifetime of the ion source chamber is increased.

公开(公告)号：US09953801B1

公开(公告)日：2018-04-24

申请号：US15363728

申请日：2016-11-29

Applicant: Axcelis Technologies, Inc.

Inventor： Michael Paul Cristoforo ,  Justin White McCabe

IPC: H01J37/05 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/05 ,  H01J37/023 ,  H01J37/08 ,  H01J37/15 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/24585 ,  H01J2237/31701

Abstract: A resolving aperture assembly for an ion implantation system has a first plate and a second plate, where the first plate and second plate generally define a resolving aperture therebetween. A position of the first plate with respect to the second plate generally defines a width of the resolving aperture. One or more actuators are operably coupled to one or more of the first plate and second plate and are configured to selectively vary the position the first plate and second plate with respect to one another, thus selectively varying the width of the resolving aperture. A servo motor precisely varies the resolving aperture width and a pneumatic cylinder independently selectively closes the resolving aperture. A downstream position actuator varies a position of the resolving aperture along a path of the ion beam, and a controller controls the one or more actuators based on desired properties of the ion beam.

公开(公告)号：US20180068828A1

公开(公告)日：2018-03-08

申请号：US15258723

申请日：2016-09-07

Applicant: Axcelis Technologies, Inc.

Inventor： Alfred Mike Halling

IPC: H01J37/304 ,  H01J37/317 ,  H01J37/147

CPC classification number: H01J37/304 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/244 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30477 ,  H01J2237/31703

Abstract: A system and method for controlling an ion implantation system as a function of sampling ion beam current and uniformity thereof. The ion implantation system includes a plurality of ion beam optical elements configured to selectively steer and/or shape the ion beam as it is transported toward a workpiece, wherein the ion beam is sampled at a high frequency to provide a plurality of ion beam current samples, which are then analyzed to detect fluctuations and/or nonuniformities or unpredicted variations amongst the plurality of ion beam current samples. Beam current samples are compared against predetermined threshold levels, and/or predicted nonuniformity levels to generate a control signal when a detected nonuniformity in the plurality of ion beam current density samples exceeds a predetermined threshold. A control system can be configured to generate a control signal for interlocking the ion beam transport in the ion implantation system or for varying an input to at least one beam optical element to control variations in beam current.

公开(公告)号：US20170362700A1

公开(公告)日：2017-12-21

申请号：US15627989

申请日：2017-06-20

Applicant: Axcelis Technologies, Inc.

Inventor： Dennis Elliott Kamenitsa ,  Richard J. Rzeszut ,  Fernando M. Silva ,  Jason R. Beringer ,  Xiangyang Wu

IPC: C23C16/12 ,  C01F7/48 ,  C01B7/13 ,  C23C16/448 ,  H01L21/306 ,  H01L21/02

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

公开(公告)号：US09711328B2

公开(公告)日：2017-07-18

申请号：US14972334

申请日：2015-12-17

Applicant: Axcelis Technologies, Inc.

Inventor： Shu Satoh

IPC: H01J37/36 ,  H01J37/30 ,  H01J37/317 ,  H01J37/304

CPC classification number: H01J37/3045 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/244 ,  H01J2237/24405 ,  H01J2237/24542

Abstract: An ion implantation system measurement system has a scan arm that rotates about an axis and a workpiece support to translate a workpiece through the ion beam. A first measurement component downstream of the scan arm provides a first signal from the ion beam. A second measurement component with a mask is coupled to the scan arm to provide a second signal from the ion beam with the rotation of the scan arm. The mask permits varying amounts of the ion radiation from the ion beam to enter a Faraday cup based on an angular orientation between the mask and the ion beam. A blocking plate selectively blocks the ion beam to the first faraday based on the rotation of the scan arm. A controller determines an angle and vertical size of the ion beam based on the first signal, second signal, and orientation between the mask and ion beam as the second measurement component rotates.

公开(公告)号：US20170178933A1

公开(公告)日：2017-06-22

申请号：US15391086

申请日：2016-12-27

Applicant: Axcelis Technologies, Inc.

Inventor： Joseph Ferrara ,  Robert J. Mitchell

IPC: H01L21/67 ,  C23C14/48 ,  H01L21/677

CPC classification number: H01L21/67213 ,  C23C14/48 ,  H01L21/67201 ,  H01L21/67265 ,  H01L21/67745

Abstract: An ion implantation apparatus, system, and method are provided for transferring a plurality of workpieces between vacuum and atmospheric pressures, wherein an alignment mechanism is operable to align a plurality of workpieces for generally simultaneous transportation to a dual-workpiece load lock chamber. The alignment mechanism comprises a characterization device, an elevator, and two vertically-aligned workpiece supports for supporting two workpieces. First and second atmospheric robots are configured to generally simultaneously transfer two workpieces at a time between load lock modules, the alignment mechanism, and a FOUP. Third and fourth vacuum robots are configured to transfer one workpiece at a time between the load lock modules and a process module.

公开(公告)号：US09620327B2

公开(公告)日：2017-04-11

申请号：US14978776

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner

IPC: H01J37/00 ,  H01J37/141 ,  H01J37/08 ,  H01J37/317 ,  H01J37/147

CPC classification number: H01J37/141 ,  H01J37/05 ,  H01J37/08 ,  H01J37/1472 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/04922 ,  H01J2237/1415 ,  H01J2237/152

Abstract: A combined scanning and focusing magnet for an ion implantation system is provided. The combined scanning and focusing magnet has a yoke having a high magnetic permeability. The yoke defines a hole configured to pass an ion beam therethrough. One or more scanner coils operably are coupled to the yoke and configured to generate a time-varying predominantly dipole magnetic field when electrically coupled to a power supply. One or more focusing coils are operably coupled to the yoke and configured to generate a predominantly multipole magnetic field, wherein the predominantly multipole magnetic field is one of static or time-varying.

公开(公告)号：US20170040141A1

公开(公告)日：2017-02-09

申请号：US14817893

申请日：2015-08-04

Applicant: Axcelis Technologies, Inc.

Inventor： Armin Huseinovic ,  Joseph Ferrara ,  Brian Terry

IPC: H01J37/20 ,  H01J37/18 ,  H01L21/683 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01J37/185 ,  H01J37/3171 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/31705 ,  H01L21/26593 ,  H01L21/67109 ,  H01L21/67213 ,  H01L21/6831

Abstract: An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. An isolation chamber is coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve selectively isolates the pre-implant cooling environment from the process environment wherein the isolation chamber comprises a pre-implant cooling workpiece support for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece. A workpiece transfer arm transfer the workpiece between the load lock chamber, isolation chamber, and chuck. A controller controls the workpiece transfer arm selectively cools the workpiece to a pre-implant cooling temperature in the isolation chamber at the pre-implant cooling pressure via a control of the isolation gate valve, pre-implant cooling workpiece support, and pressurized gas source.

Abstract translation: 离子注入系统具有处理室，其具有工艺环境，以及离子注入装置，被配置为将离子注入到由处理室内的卡盘支撑的工件中。 加载锁定室将工艺（真空）环境与大气环境隔离，其中负载锁定工件支撑件支撑其中的工件。 隔离室通过在其中限定的植入前冷却环境耦合到处理室。 隔离闸阀选择性地将植入前冷却环境与过程环境隔离，其中隔离室包括用于支撑和冷却工件的植入物前冷却工件支撑件。 隔离闸阀是工件进出隔离室的唯一进入路径。 加压气体选择性地将植入物前冷却环境加压到大于工艺压力的植入前冷却压力，以便于快速冷却工件。 工件传送臂在加载锁定室，隔离室和卡盘之间传送工件。 控制器控制工件传送臂通过隔离闸阀，预植入物冷却工件支撑件和加压气体源的控制，以预植入物冷却压力选择性地将工件冷却至隔离室中的植入前冷却温度。