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公开(公告)号：KR1020050028412A
公开(公告)日：2005-03-23
申请号：KR1020030064638
申请日：2003-09-18
Applicant: 한국과학기술연구원
IPC: G02F3/00
Abstract: A method of realizing an all-optical AND logical device using a semiconductor optical amplifier is provided to use gain saturation characteristics of the amplifier in order to implement the device. One semiconductor optical amplifier(SOA2) of two semiconductor optical amplifiers(SOA1,SOA2) receives a clock signal(CLOCK) of a constant time period as the first irradiation signal along with the first pump signal(B) and generates a gain-modulated output value. The other semiconductor optical amplifier(SOA1) thereof receives the second irradiation signal(A) along with the gain-modulated output value as the second pump signal and outputs an AND signal(AB).
Abstract translation: 提供一种使用半导体光放大器实现全光AND AND逻辑器件的方法，以使用放大器的增益饱和特性来实现器件。 两个半导体光放大器（SOA1，SOA2）的一个半导体光放大器（SOA2）与第一泵浦信号（B）一起接收作为第一辐射信号的恒定时间段的时钟信号（CLOCK），并产生增益调制输出 值。 其他半导体光放大器（SOA1）连同增益调制输出值作为第二泵浦信号接收第二照射信号（A），并输出“与”信号（AB）。
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公开(公告)号：KR1020050023678A
公开(公告)日：2005-03-10
申请号：KR1020030061028
申请日：2003-09-02
Applicant: 한국과학기술연구원
IPC: G02F1/313
CPC classification number: G02F1/3132 , G02B6/12004 , G02B6/12007 , G02F2001/3135
Abstract: PURPOSE: An ultra-short polarization-independent vertical directional coupler switch is provided to accurately control the thickness between two waveguide core layers to a submicron level by forming an inner cladding layer between two waveguide core layers using epitaxial growth, thereby shortening a light coupling length and operating the switch regardless of light polarization condition. CONSTITUTION: An ultra-short polarization-independent vertical directional coupler switch comprises the first waveguide part(10), the second waveguide part(20), and an inner cladding layer(30) between the first waveguide part and the second waveguide part. At least one of the first and the second waveguide parts is formed on a predetermined substrate(40). The first waveguide part and the second waveguide part are arranged in a vertical direction over the substrate. The first waveguide part has the first core layer(12) and the first outer cladding layer(14). The second waveguide part has the second core layer(22) and the second outer cladding layer(24).
Abstract translation: 目的：提供一种超短路偏振独立垂直方向耦合器开关，通过使用外延生长在两个波导芯层之间形成内包层，从而将两个波导芯层之间的厚度精确控制到亚微米级，从而缩短光耦合长度 并且无论光偏振条件如何，操作开关。 构成：超短路偏振无关垂直方向耦合器开关包括第一波导部分（10），第二波导部分（20）和第一波导部分与第二波导部分之间的内包层（30）。 第一和第二波导部分中的至少一个形成在预定基板（40）上。 第一波导部分和第二波导部分沿着衬底上的垂直方向布置。 第一波导部分具有第一芯层（12）和第一外包层（14）。 第二波导部分具有第二芯层（22）和第二外包层（24）。
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公开(公告)号：KR1020040036805A
公开(公告)日：2004-05-03
申请号：KR1020020065155
申请日：2002-10-24
Applicant: 한국과학기술연구원
IPC: G02F3/00
Abstract: PURPOSE: A method for realizing a wavelength variable all-optic NOR logic element is provided to apply a forward bias current to an EAM(Electro-Absorption Modulator) area of an EMILD(Electro-absorption Modulation Integrated Laser Diode) element, and to induce gain saturation, thereby realizing an all-optic NOR logic element. CONSTITUTION: An EMILD element(10) receives an RF signal from an EAM area(11), modulates a CW optical signal generated from a DFB-LD area(12), and makes a necessary signal. An electrical isolation area(15) is disposed between the EAM area(11) and the DFB-LD area(12) in 20 micrometers. An AR(Anti Reflection) coating portion(13) is formed by AR-coating a front side, and an HR(High Reflection) coating portion(14) is formed by HR-coating a rear side, such that light is incident or emitted on the front side only.
Abstract translation: 目的：提供一种实现波长可变全光NOR逻辑元件的方法，用于向EMILD（电吸收式调制集成激光二极管）元件的EAM（电吸收调制器）区域施加正向偏置电流，并诱导 增益饱和，从而实现全光NOR逻辑元件。 构成：EMILD元件（10）从EAM区域（11）接收RF信号，调制从DFB-LD区域（12）产生的CW光信号，并且产生必要的信号。 电隔离区域（15）以20微米的形式设置在EAM区域（11）和DFB-LD区域（12）之间。 通过AR正面涂覆AR（防反射）涂布部分（13），HR（高反射）涂层部分（HR）通过HR涂覆后侧形成，使得光线入射或发射 只在前方
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公开(公告)号：KR100425374B1
公开(公告)日：2004-03-30
申请号：KR1020010070655
申请日：2001-11-14
Applicant: 한국과학기술연구원
IPC: G06F7/48
CPC classification number: H01S5/50 , G02F3/00 , H01S3/06754 , H01S5/509
Abstract: The present invention relates to an implementation method of all-optical half adder by using semiconductor optical amplifier(SOA)-based devices and the apparatus thereof. In more detail, it relates to an implementation method of all-optical half adder comprising an all-optical XOR gate and an all-optical AND gate, implemented by using SOA-based devices, and an apparatus thereof.
Abstract translation: 本发明涉及一种利用基于半导体光放大器（SOA）的器件的全光半加器的实现方法及其装置。 更详细地说，本发明涉及一种全光学半加器的实现方法及其装置，该全光半加器包括全光学异或门和全光学与门。
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Patent Agency Ranking
公开(公告)号：KR1020030028675A
公开(公告)日：2003-04-10
申请号：KR1020010059368
申请日：2001-09-25
Applicant: 한국과학기술연구원
IPC: G02F3/00
Abstract: PURPOSE: An apparatus for realizing an electric light NAND logic element using a semiconductor optical amplifier is provided to be easily combined with other single logic elements for controlling all optical system with only optical signals. CONSTITUTION: A pulse generator(100) generates light pulses. A DFB-LD(Distributed Feedback Laser Diode)(102) has input continuous laser light signals. A first optical divider(104) divides output light of the DFB-LD. An optical modulator(106) modulates the output light from the first optical divider. An optical delay(112) obtains quarter time delay of the output light. An attenuator(108) controls the strength of the output light. A MUX(110) multiplexes the output light of the attenuator. An EDFA(Erbium-Doped Fiber Amplifier)(116) adds the output light of the MUX and the attenuator for amplifying to a pump signal. A tunable laser diode(120) has continuous wave irradiation signals. A second optical divider(122) divides the output light of the tunable laser diode at a ratio of 50 to 50. A semiconductor optical amplifier(124) amplifies the pump signal and the continuous wave irradiation signals for gain-saturating and wavelength-converting the signals. An optical filter(126) filters tunable output light of the semiconductor optical amplifier. An optical signal analyzer(128) detects and analyzes the tunable output light of the optical filter.
Abstract translation: 目的：提供一种用于实现使用半导体光放大器的电灯NAND逻辑元件的装置，以便容易地与用于仅用光信号控制所有光学系统的其它单个逻辑元件组合。 构成：脉冲发生器（100）产生光脉冲。 DFB-LD（分布式反馈激光二极管）（102）具有输入的连续激光信号。 第一分光器（104）分割DFB-LD的输出光。 光调制器（106）调制来自第一分光器的输出光。 光延迟（112）获得输出光的四分之一时间延迟。 衰减器（108）控制输出光的强度。 MUX（110）复用衰减器的输出光。 EDFA（掺铒光纤放大器）（116）将MUX的输出光和用于放大的衰减器相加到泵浦信号。 可调激光二极管（120）具有连续波照射信号。 第二分光器（122）以50至50的比例对可调谐激光二极管的输出光进行分压。半导体光放大器（124）放大泵浦信号和连续波照射信号以进行增益饱和和波长转换 信号。 滤光器（126）对半导体光放大器的可调输出光进行滤光。 光信号分析器（128）检测并分析滤光器的可调输出光。
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公开(公告)号：KR100361036B1
公开(公告)日：2002-11-18
申请号：KR1020000005618
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L21/00
Abstract: 본 발명은 얇은 반도체 시료가 깨지지 않도록 마운팅(mounting) 기술을 이용하여 반도체 광소자의 전,후 단면에 무반사 코딩을 하도록 하는 무반사 코팅을 위한 반도체 광소자 칩의 시료 홀더 장치에 관한 것이다.
따라서, 본 발명은 무반사 코팅시 시료 깨짐을 방지하기 위한 마운팅 기술을 이용하는 시료 홀더 장치에 있어서, 제 1스테인레스(10) 상에는 스페이서(20)와, 고정판(30)과, 제 2스테인레스(40)가 순차적으로 적층되되, 각 홀(50a)을 통하여 상기 제 2스테인레스(40)으로부터 상기 제 1스테인레스(10)까지 도달되도록 홀더결합수단(50)에 의해 체결되고, 각 홀(55a)을 통하여 상기 제 2스테인레스(40)으로부터 상기 고정판(30)까지 도달되도록 시료고정수단(55)에 의해 체결되며, 상기 고정판(30)과 상기 제 1스테인레스(10) 사이에 놓여지는 위치에 스페이서(20)와 수평으로 레이저바(60)가 연장되어 설치되도록 구성되어, 상기 제 2스테인레스(40)의 면적 크기를 상기 제 1스테인레스(10)의 면적 크기 보다 작게 설계함으로서 무반사 코팅시 레이저바(60)에 가해지는 힘의 세기� � 분산시키도록 하는 것을 특징으로 하는 무반사 코팅을 위한 반도체 광소자 칩의 시료 홀더 장치가 제시된다.-
公开(公告)号：KR1020010077675A
公开(公告)日：2001-08-20
申请号：KR1020000005631
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L31/14
Abstract: PURPOSE: A method for extending the gain bandwidth of a semiconductor optical amplifier is provided to obtain the semiconductor optical amplifier having a wide gain bandwidth by using a quantum dot as a gain region of the semiconductor optical amplifier. CONSTITUTION: An InP(Indium Phosphorus) buffer layer is grown at a predetermined thickness(S10). After the growing of the InP buffer layer, a predetermined gas is supplied(S20, S30, S40). An InAs(Indium arsenide) single well layer is grown on the InP buffer layer(S50). After the growing of the InAs layer, a predetermined gas is supplied(S60, S70, S80). An InP cap layer is grown on the InAs layer(S90).
Abstract translation: 目的：提供一种用于扩展半导体光放大器的增益带宽的方法，通过使用量子点作为半导体光放大器的增益区，获得具有宽增益带宽的半导体光放大器。 构成：以预定厚度生长InP（铟磷）缓冲层（S10）。 在InP缓冲层生长之后，提供预定的气体（S20，S30，S40）。 在InP缓冲层上生长InAs（砷化铟）单阱层（S50）。 在InAs层生长之后，提供预定的气体（S60，S70，S80）。 InAs层在InAs层上生长（S90）。
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公开(公告)号：KR1019940001227B1
公开(公告)日：1994-02-17
申请号：KR1019910011402
申请日：1991-07-05
Applicant: 한국과학기술연구원
IPC: H01L21/30
Abstract: The focusing method for a laser lithographic device uses the interference pattern. The laser beam from a light source (10) passes a collimater (11) to go to a beam splitter (12), where the laser beam is splitted into two ways, one for a mirror (13) and the other for an object (19) on a reflector (18). The two different passes of the laser beam form the interference pattern on the CCD (15) to be monitored. The focal length adjustable lens are adjusted to have the interference pattern straightened.
Abstract translation: 激光光刻设备的聚焦方法使用干涉图案。 来自光源（10）的激光束通过准直器（11）去到分束器（12），其中激光束被分成两种方式，一个用于反射镜（13），另一个用于物体（ 19）在反射器（18）上。 激光束的两个不同通道在待监测的CCD（15）上形成干涉图案。 调整焦距可调镜头以使干涉图案矫直。
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