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    METROLOGY METHOD, TARGET AND SUBSTRATE
    123.
    发明申请
    METROLOGY METHOD, TARGET AND SUBSTRATE 审中-公开
    计量方法，目标和底物

    公开(公告)号：US20160061589A1

    公开(公告)日：2016-03-03

    申请号：US14835504

    申请日：2015-08-25

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Kaustuve BHATTACHARYYA ,  Henricus Wilhelmus Maria Van Buel ,  Christophe David Fouquet ,  Hendrik Jan Hidde Smilde ,  Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Johannes Marcus Maria Beltman ,  Andreas Fuchs ,  Omer Abubaker Omer Adam ,  Michael Kubis ,  Martin Jacobus Johan Jak

    IPC: G01B11/14

    CPC classification number: G01B11/14 ,  G03F7/70633 ,  G03F7/70683

    Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

    Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的 设计比第二子目标，不同的设计包括具有与第二子目标周期结构不同的间距，特征宽度，空间宽度和/或分割的第一子目标周期性结构，或（2）第一和第二子目标周期结构 子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下面的第二层中的第一周期性结构下方，并且在第二层周期结构之下不存在周期性结构 并且第四周期性结构至少部分地位于第二层下面的第三层中的第二周期性结构下方。

    Inspection apparatus and method
    124.
    发明授权
    Inspection apparatus and method 有权
    检验仪器及方法

    公开(公告)号：US09222834B2

    公开(公告)日：2015-12-29

    申请号：US13767769

    申请日：2013-02-14

    Applicant: ASML Netherlands B.V.

    Inventor： Arie Jeffrey Den Boef

    IPC: G01J3/44 ,  G03F7/20 ,  G03F9/00 ,  G01N21/956 ,  G01N21/47 ,  G01N21/95

    CPC classification number: G01J3/4412 ,  G01J3/44 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G02B5/205 ,  G03F7/70591 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7026

    Abstract: A spectroscopic scatterometer detects both zero order and higher order radiation diffracted from an illuminated spot on a target grating. The apparatus forms and detects a spectrum of zero order (reflected) radiation, and separately forms and detects a spectrum of the higher order diffracted radiation. Each spectrum is formed using a symmetrical phase grating, so as to form and detect a symmetrical pair of spectra. The pair of spectra can be averaged to obtain a single spectrum with reduced focus sensitivity. Comparing the two spectra can yield information for improving height measurements in a subsequent lithographic step. The target grating is oriented obliquely so that the zero order and higher order radiation emanate from the spot in different planes. Two scatterometers can operate simultaneously, illuminating the target from different oblique directions. A radial transmission filter reduces sidelobes in the spot and reduces product crosstalk.

    Abstract translation: 光谱散射仪检测从目标光栅上的照明光点衍射的零级和高阶辐射。 该装置形成和检测零级（反射）辐射的光谱，并分别形成和检测高阶衍射辐射的光谱。 每个光谱使用对称相位光栅形成，以便形成和检测对称的光谱对。 这对光谱可以被平均以获得具有降低的聚焦灵敏度的单个光谱。 比较两个光谱可以产生用于在随后的光刻步骤中改善高度测量的信息。 目标光栅倾斜定向，使得零级和高阶辐射从不同平面中的光点发出。 两个散射仪可以同时操作，从不同的倾斜方向照射目标。 径向传输过滤器可减少现场的旁瓣并减少产品串扰。

    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    125.
    发明申请
    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 有权
    用于测量微结构不对称的方法和装置，位置测量方法，位置测量装置，平面设备和装置制造方法

    公开(公告)号：US20150176979A1

    公开(公告)日：2015-06-25

    申请号：US14421434

    申请日：2013-07-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Simon Gijsbert Josephus Mathijssen ,  Erik Willem Bogaart ,  Patricius Aloysius Jacobus Tinnemans ,  Arie Jeffrey Den Boef

    IPC: G01B11/14 ,  G01B9/02 ,  G01B11/27 ,  G03F7/20

    CPC classification number: G01B11/14 ,  G01B9/02 ,  G01B11/27 ,  G03F7/70058 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7069 ,  G03F9/7088

    Abstract: A lithographic apparatus includes an alignment sensor including a self-referencing interferometer for reading the position of an alignment target comprising a periodic structure. An illumination optical system for focusing radiation into a spot on said structure. An asymmetry detection optical system receives a share of positive and negative orders of radiation diffracted by the periodic structure, and forms first and second images of said spot on first and second detectors respectively, wherein said negative order radiation is used to form the first image and said positive order radiation is used to form the second image. A processor for processing together signals from said first and second detectors representing intensities of said positive and negative orders to produce a measurement of asymmetry in the periodic structure. The asymmetry measurement can be used to improve accuracy of the position read by the alignment sensor.

    Abstract translation: 光刻设备包括对准传感器，其包括用于读取包括周期性结构的对准目标位置的自参考干涉仪。 一种照明光学系统，用于将辐射聚焦到所述结构上的光斑中。 不对称检测光学系统接收通过周期性结构衍射的辐射的正数和负数的共享，并分别在第一和第二检测器上形成所述光斑的第一和第二图像，其中所述负序辐射用于形成第一图像， 所述正阶辐射用于形成第二图像。 用于处理来自所述第一和第二检测器的信号的处理器，其表示所述正序和负序的强度，以产生周期性结构中的不对称性的测量。 可以使用不对称测量来提高由对准传感器读取的位置的精度。

    Position Measuring Method, Position Measuring Apparatus, Lithographic Apparatus and Device Manufacturing Method, Optical Element
    126.
    发明申请
    Position Measuring Method, Position Measuring Apparatus, Lithographic Apparatus and Device Manufacturing Method, Optical Element 有权
    位置测量方法，位置测量装置，平版印刷设备和装置制造方法，光学元件

    公开(公告)号：US20150109624A1

    公开(公告)日：2015-04-23

    申请号：US14391304

    申请日：2013-02-07

    Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

    Inventor： Justin Lloyd Kreuzer ,  Arie Jeffrey Den Boef ,  Simon Josephus Mathijssen

    IPC: G01B11/14 ,  G01B9/02

    CPC classification number: G01B11/14 ,  F25D3/06 ,  F25D11/003 ,  F25D23/006 ,  G01B9/0207 ,  G03F7/70108 ,  G03F9/7069 ,  G03F9/7084 ,  G03F9/7088

    Abstract: An apparatus (AS) measures positions of marks (202) on a lithographic substrate (W). An illumination arrangement (940, 962, 964) provides off-axis radiation from at least first and second regions. The first and second source regions are diametrically opposite one another with respect to an optical axis (O) and are limited in angular extent. The regions may be small spots selected according to a direction of periodicity of a mark being measured, or larger segments. Radiation at a selected pair of source regions can be generated by supplying radiation at a single source feed position to a self-referencing interferometer. A modified half wave plate is positioned downstream of the interferometer, which can be used in the position measuring apparatus. The modified half wave plate has its fast axis in one part arranged at 45° to the fast axis in another part diametrically opposite.

    Abstract translation: 设备（AS）测量光刻基板（W）上的标记（202）的位置。 照明装置（940，962,964）提供至少第一和第二区域的离轴辐射。 第一和第二源极区域相对于光轴线（O）彼此径向相对并且在角度范围内受到限制。 这些区域可以是根据正被测量的标记的周期方向或较大的段选择的小点。 可以通过将单个源馈送位置处的辐射提供给自参考干涉仪来产生所选择的一对源区域处的辐射。 修改后的半波片位于干涉仪的下游，可用于位置测量装置。 修改后的半波片的一个部分的快轴与另一部分直径相对的快轴成45度。

    On chip sensor for wafer overlay measurement
    128.
    发明授权
    On chip sensor for wafer overlay measurement 有权

    公开(公告)号：US12066762B2

    公开(公告)日：2024-08-20

    申请号：US17637942

    申请日：2020-08-05

    Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

    Inventor： Mohamed Swillam ,  Stephen Roux ,  Tamer Mohamed Tawfik Ahmed Mohamed Elazhary ,  Arie Jeffrey Den Boef

    IPC: G03F7/20 ,  G02B6/122 ,  G02B26/08 ,  G03F7/00

    CPC classification number: G03F7/70633 ,  G02B6/1225 ,  G02B26/0833

    Abstract: A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.

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